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1.发明授权公开(公告)号：US11711929B2
公开(公告)日：2023-07-25
申请号：US17428665
申请日：2020-02-13
Applicant: Toray Industries, Inc.
Inventor： Shota Kawai , Hiroji Shimizu , Seiichiro Murase
CPC classification number: H10K10/84 , H10K10/466 , H10K10/484 , H10K71/621 , H10K85/221
Abstract: A field-effect transistor comprises, on a substrate, a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; wires individually electrically connected to the source electrode and the drain electrode; and a gate insulating layer that insulates the semiconductor layer from the gate electrode, wherein a connecting portion between the source electrode and the wire forms a continuous phase, and a connecting portion between the drain electrode and the wire forms a continuous phase, the portions constituting the continuous phases contain at least an electrically conductive component and an organic component, and integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the wires are higher than integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the source electrode and the drain electrode.
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公开(公告)号：US20230217803A1
公开(公告)日：2023-07-06
申请号：US18008501
申请日：2021-06-10
Applicant: Toray Industries, Inc.
Inventor： Yoshitake Masuda , Takafumi Akamatsu , Akihiro Tsuruta , Takayoshi Hirai , Kojiro Naito , Seiichiro Murase
CPC classification number: H10K85/225 , G01N27/127 , B82Y15/00
Abstract: An electronic device material includes: carbon nanotubes having a purity of Semiconductor Carbon Nanotubes of 80% by mass or more; and a n-type semiconductor.
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公开(公告)号：US20220037778A1
公开(公告)日：2022-02-03
申请号：US17298783
申请日：2019-12-13
Applicant: Toray Industries, Inc.
Inventor： Ryuichi Tanaka , Seiichiro Murase , Junji Wakita
Abstract: A flexible wireless communication device with high position accuracy and low cost by a simple process is described, including a wireless communication device and a method for manufacturing a wireless communication device formed by bonding a first film substrate on which at least a circuit is formed and a second film substrate on which an antenna is formed, in which the circuit includes a transistor, and the transistor is formed by a step of forming a conductive pattern on the first film substrate, a step of forming an insulating layer on the film substrate on which the conductive pattern is formed, and a step of applying a solution including an organic semiconductor and/or a carbon material on the insulating layer and drying the solution to form a semiconductor layer.
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公开(公告)号：US11127698B2
公开(公告)日：2021-09-21
申请号：US16609903
申请日：2018-06-22
Applicant: TORAY INDUSTRIES, INC.
Inventor： Shota Kawai , Junji Wakita , Seiichiro Murase
Abstract: The purpose of the present invention is to provide: a conductive film; a method for producing a conductive film, which enables the achievement of a conductive film or conductive pattern having good electrical conductivity by means of light irradiation of a short period of time without being accompanied by a long-time heat treatment at high temperatures; a method for producing a field effect transistor, which uses this method for producing a conductive film; and a method for producing a wireless communication device. A method for producing a conductive film according to the present invention for the achievement of the above-described purpose comprises: a step for forming a coating film by applying a conductive paste, which contains conductive particles that have surfaces covered by elemental carbon, onto a substrate; and a step for irradiating the coating film with flashing light.
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公开(公告)号：US09691935B2
公开(公告)日：2017-06-27
申请号：US14902403
申请日：2014-06-30
Applicant: TORAY INDUSTRIES, INC.
Inventor： Sachio Inaba , Seiichiro Murase , Hiroji Shimizu , Kouichi Dan , Mitsuhito Suwa
IPC: H01L31/18 , H01L31/068 , H01L21/22 , H01L21/225 , H01L31/103 , C09D183/04 , C08G77/08 , C09D11/03 , C09D11/102 , C09D11/52 , C08G77/00 , C08K3/32 , C08K3/36
CPC classification number: H01L31/1876 , C08G77/08 , C08G77/80 , C08K3/32 , C08K3/36 , C08K2003/329 , C09D11/03 , C09D11/102 , C09D11/52 , C09D183/04 , H01L21/2225 , H01L21/2254 , H01L31/0682 , H01L31/103 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521 , C08K3/38
Abstract: An impurity-diffusing composition including (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. In the formula, R1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R1 may be the same or different. R2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R2 may be the same or different. R3 and R4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R3 and a plurality of R4 each may be the same or different. The ratio of n:m is 95:5 to 25:75.
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Patent Agency Ranking
公开(公告)号：US12029107B2
公开(公告)日：2024-07-02
申请号：US17441349
申请日：2020-03-06
Applicant: Toray Industries, Inc.
Inventor： Yasuhiro Kobayashi , Kazuki Isogai , Seiichiro Murase
CPC classification number: H10K85/221 , H10K10/46 , H10K10/484 , H10K10/88
Abstract: An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability with a convenient process, where the n-type semiconductor element includes: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer for insulating the semiconductor layer from the gate electrode; and a second insulating layer positioned on the opposite side of the semiconductor layer from the gate insulating layer and in contact with the semiconductor layer, where the semiconductor layer contains nanocarbon, and the second insulating layer contains (a) a compound with an ionization potential in vacuum of 7.0 eV or less, and (b) a polymer.
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公开(公告)号：US11996445B2
公开(公告)日：2024-05-28
申请号：US17273831
申请日：2019-09-17
Applicant: Toray Industries, Inc.
Inventor： Kazuki Isogai , Seiichiro Murase , Ryuichi Tanaka , Hidekazu Nishino
IPC: H01L29/06 , B82Y30/00 , C01B32/174 , H01L29/786 , H10K10/46
CPC classification number: H01L29/0669 , C01B32/174 , H01L29/786 , H10K10/488 , B82Y30/00
Abstract: A carbon nanotube composite is described that can be accurately applied to a desired position by inkjet and a dispersion liquid using the same, where a main object is a carbon nanotube composite in which a conjugated polymer is attached to at least a part of the surface of a carbon nanotube, the conjugated polymer having a side chain represented by general formula (1):
wherein R, X and A are defined as described.-
公开(公告)号：US11690237B2
公开(公告)日：2023-06-27
申请号：US16630759
申请日：2018-09-25
Applicant: TORAY INDUSTRIES, INC.
Inventor： Daisuke Sakii , Seiichiro Murase , Junji Wakita
IPC: H10K10/46 , C08K3/04 , C08K3/08 , C08K3/22 , G06K19/07 , C08G77/00 , C08G77/22 , H01L29/786 , C08G77/28 , C08G77/14
CPC classification number: H10K10/478 , C08G77/22 , C08G77/28 , C08G77/80 , C08K3/041 , C08K3/08 , C08K3/22 , G06K19/0723 , H01L29/78696 , C08G77/14 , C08K2003/0806 , C08K2003/2237 , C08K2201/011
Abstract: A field-effect transistor including at least: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode, wherein the semiconductor layer contains a carbon nanotube, and the gate insulating layer contains a polymer having inorganic particles bound thereto. Provided is a field-effect transistor and a method for producing the field-effect transistor, wherein the field-effect transistor causes decreased leak current and furthermore enables a semiconductor solution to be uniformly applied.
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公开(公告)号：US11487981B2
公开(公告)日：2022-11-01
申请号：US16652898
申请日：2018-09-27
Applicant: TORAY INDUSTRIES, INC.
Inventor： Junji Wakita , Seiichiro Murase
Abstract: A package in an aspect of the present invention includes: a package body having a receiving cavity for receiving a cavity item; a sheet for sealing the receiving cavity; a conducting wire formed on the sheet so as to pass above the sealed opening portion of the receiving cavity; and a wireless communication device formed on the sheet so as to be connected to the conducting wire. The wireless communication device transmits a signal including information which differs between before and after the conducting wire together with the sheet is cut as a result of opening the receiving cavity. The information transmitted from the wireless communication device is read by a reader. The package and the reader are used for a cavity item management system.
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公开(公告)号：US20210328011A1
公开(公告)日：2021-10-21
申请号：US17273831
申请日：2019-09-17
Applicant: Toray Industries, Inc.
Inventor： Kazuki Isogai , Seiichiro Murase , Ryuichi Tanaka , Hidekazu Nishino
IPC: H01L29/06 , C01B32/174 , H01L51/05 , H01L29/786
Abstract: A carbon nanotube composite is described that can be accurately applied to a desired position by inkjet and a dispersion liquid using the same, where a main object is a carbon nanotube composite in which a conjugated polymer is attached to at least a part of the surface of a carbon nanotube, the conjugated polymer having a side chain represented by general formula (1): wherein R, X and A are defined as described.
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