公开(公告)号：US20190378863A1

公开(公告)日：2019-12-12

申请号：US16516451

申请日：2019-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang ,  Jhy-Jyi Sze

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.

公开(公告)号：US10367023B1

公开(公告)日：2019-07-30

申请号：US16005857

申请日：2018-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang ,  Jhy-Jyi Sze

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a pixel region of a substrate. A first dielectric is disposed in trenches within a first side of the substrate. The trenches are defined by first sidewalls disposed on opposing sides of the pixel region. An internal reflection enhancement structure is arranged along the first side of the substrate and is configured to reflect radiation exiting from the substrate back into the substrate.

公开(公告)号：US09899443B2

公开(公告)日：2018-02-20

申请号：US15216815

申请日：2016-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Wen Lee ,  Kazuaki Hashimoto ,  Kuo-Chung Yee

IPC: H01L23/48 ,  H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L24/02 ,  H01L24/13 ,  H01L24/14 ,  H01L24/19 ,  H01L25/50 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469 ,  H01L2224/02379 ,  H01L2224/13024 ,  H01L2224/14135 ,  H01L2924/1433 ,  H01L2924/1436

Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) package is provided. The image sensor package comprises a first integrated circuit (IC) die, a second IC die, and a fan-out structure. The first IC die comprises a pixel sensor array, and the second IC die is under and bonded to the first IC die. Further, the fan-out structure is under and bonded to the second IC die. The fan-out structure comprises a third IC die, a fan-out dielectric layer laterally adjacent to the third IC die, a through insulator via (TIV) extending through the fan-out dielectric layer, and one or more redistribution layers (RDLs) under the third IC die and the TIV. The one or more RDLs electrically couple to the third IC die and the TIV. A method for manufacturing the CIS package is also provided.

公开(公告)号：US20170221952A1

公开(公告)日：2017-08-03

申请号：US15487473

申请日：2017-04-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chin Huang ,  Pao-Tung Chen ,  Wei-Chieh Chiang ,  Kazuaki Hashimoto ,  Jen-Cheng Liu

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/1469

Abstract: An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided.

公开(公告)号：US09634053B2

公开(公告)日：2017-04-25

申请号：US14564231

申请日：2014-12-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chin Huang ,  Pao-Tung Chen ,  Wei-Chieh Chiang ,  Kazuaki Hashimoto ,  Jen-Cheng Liu

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/1469

Abstract: An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided.

公开(公告)号：US09536915B2

公开(公告)日：2017-01-03

申请号：US15147888

申请日：2016-05-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Keng-Yu Chou ,  Kazuaki Hashimoto ,  Jen-Cheng Liu ,  Jhy-Jyi Sze ,  Wei-Chieh Chiang ,  Pao-Tung Chen

IPC: H04N5/33 ,  H01L27/146 ,  H04N5/335 ,  G02B1/11 ,  H04N9/04 ,  G02B5/20 ,  G02B5/28 ,  G02B27/10 ,  G02B27/12 ,  H04N5/225

CPC classification number: H01L27/14621 ,  G02B1/11 ,  G02B5/201 ,  G02B5/208 ,  G02B5/22 ,  G02B5/282 ,  G02B27/1013 ,  G02B27/123 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/33 ,  H04N5/335 ,  H04N9/045 ,  H04N2209/042

Abstract: An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.

Abstract translation: 图像传感器包括基板，感光装置，滤色器层，微透镜层和红外滤光层。 感光装置设置在基板中。 滤色器层设置成覆盖感光装置。 微透镜层设置在滤色器层上。 红外滤光层直接覆盖微透镜层。