公开(公告)号：US10510795B1

公开(公告)日：2019-12-17

申请号：US16516451

申请日：2019-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang ,  Jhy-Jyi Sze

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.

公开(公告)号：US10134794B2

公开(公告)日：2018-11-20

申请号：US15487473

申请日：2017-04-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chin Huang ,  Pao-Tung Chen ,  Wei-Chieh Chiang ,  Kazuaki Hashimoto ,  Jen-Cheng Liu

IPC: H01L27/146

Abstract: An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided.

公开(公告)号：US20220216260A1

公开(公告)日：2022-07-07

申请号：US17140346

申请日：2021-01-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Jen-Cheng Liu ,  Kazuaki Hashimoto ,  Ming-En Chen ,  Shyh-Fann Ting ,  Shuang-Ji Tsai ,  Wei-Chieh Chiang

IPC: H01L27/146 ,  H04N5/3745

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. A gate structure is disposed along a front-side of the substrate. A back-side of the substrate includes one or more first angled surfaces defining a central diffuser disposed over the image sensing element. The back-side of the substrate further includes second angled surfaces defining a plurality of peripheral diffusers laterally surrounding the central diffuser. The plurality of peripheral diffusers are a smaller size than the central diffuser.

公开(公告)号：US11233081B2

公开(公告)日：2022-01-25

申请号：US16416583

申请日：2019-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Chien Yu ,  Ting-Cheng Chang ,  Wen-Hau Wu ,  Chih-Kung Chang

IPC: H01L27/146

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

公开(公告)号：US10651220B2

公开(公告)日：2020-05-12

申请号：US16156061

申请日：2018-10-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146 ,  H01L31/0216

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

公开(公告)号：US09374538B2

公开(公告)日：2016-06-21

申请号：US14486803

申请日：2014-09-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Keng-Yu Chou ,  Kazuaki Hashimoto ,  Jen-Cheng Liu ,  Jhy-Jyi Sze ,  Wei-Chieh Chiang ,  Pao-Tung Chen

IPC: H04N5/33 ,  H04N5/335 ,  G02B1/11 ,  H04N9/04

CPC classification number: H01L27/14621 ,  G02B1/11 ,  G02B5/201 ,  G02B5/208 ,  G02B5/22 ,  G02B5/282 ,  G02B27/1013 ,  G02B27/123 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/33 ,  H04N5/335 ,  H04N9/045 ,  H04N2209/042

Abstract: An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.

Abstract translation: 图像传感器包括基板，感光装置，滤色器层，微透镜层和红外滤光层。 感光装置设置在基板中。 滤色器层设置成覆盖感光装置。 微透镜层设置在滤色器层上。 红外滤光层直接覆盖微透镜层。

公开(公告)号：US20160163755A1

公开(公告)日：2016-06-09

申请号：US14564231

申请日：2014-12-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chin Huang ,  Pao-Tung Chen ,  Wei-Chieh Chiang ,  Kazuaki Hashimoto ,  Jen-Cheng Liu

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/1469

Abstract: An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided.

Abstract translation: 提供了具有将图像传感器芯片接合和/或电耦合到封装基板的侧壁互连结构的图像传感器芯片。 图像传感器芯片包括支撑被配置为感测入射光的集成电路（IC）的基板。 侧壁互连结构沿着衬底的侧壁布置并且与IC电耦合。 还提供了一种用于制造图像传感器芯片的方法和包括图像传感器芯片的图像传感器封装。

公开(公告)号：US12154924B2

公开(公告)日：2024-11-26

申请号：US17236311

申请日：2021-04-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L31/0216 ,  H01L27/146

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

公开(公告)号：US11329083B2

公开(公告)日：2022-05-10

申请号：US16227138

申请日：2018-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hau Wu ,  Chun-Hao Chuang ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Cheng Yu Huang

IPC: H01L27/146

Abstract: An image sensor package is provided. The image sensor package comprises a package substrate, and an image sensor chip arranged over the package substrate. The integrated circuit device further comprises a protection layer overlying the image sensor chip having a planar top surface and a bottom surface lining and contacting structures under the protection layer, and an on-wafer shield structure spaced around a periphery of the image sensor chip. The height of the image sensor package can be reduced since a discrete cover glass or an infrared filter and corresponding intervening materials are no longer needed since being replaced by the build in protection layer. The size of the image sensor package can be reduced since a discrete light shield and corresponding intervening materials are no longer needed since being replaced by the build in on wafer light shield structure.

公开(公告)号：US11158662B2

公开(公告)日：2021-10-26

申请号：US16695575

申请日：2019-11-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang ,  Jhy-Jyi Sze

IPC: H01L27/146

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has an image sensor within a substrate. A first dielectric has an upper surface that extends over a first side of the substrate and over one or more trenches within the first side of the substrate. The one or more trenches laterally surround the image sensor. An internal reflection structure arranged over the upper surface of the first dielectric. The internal reflection structure is configured to reflect radiation exiting from the substrate back into the substrate.