公开(公告)号：US4986877A

公开(公告)日：1991-01-22

申请号：US223642

申请日：1988-07-25

申请人： Shinichi Tachi ,  Kazunori Tsujimoto ,  Sadayuki Okudaira

发明人： Shinichi Tachi ,  Kazunori Tsujimoto ,  Sadayuki Okudaira

IPC分类号： H01L21/3205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/32137 ,  H01L21/31116 ,  H01L21/32136

摘要： A first etching for large side etching is conducted while maintaining the temperature of an article to be etched at a first temperature, and a second etching for small side etching is then conducted while maintaining the article to be etched at a second temperature lower than the first temperature. This enables the formation of various patterns in which the upper part of the sidewall is inclined at an angle smaller than that of the lower part of the sidewall.

公开(公告)号：US4956043A

公开(公告)日：1990-09-11

申请号：US192178

申请日：1988-05-10

申请人： Masafumi Kanetomo ,  Shinichi Tachi ,  Kazunori Tsujimoto ,  Kiichiro Mukai ,  Takahiro Daikoku ,  Shigekazu Kieda ,  Keijiro Shindo ,  Kenshiro Tamura

发明人： Masafumi Kanetomo ,  Shinichi Tachi ,  Kazunori Tsujimoto ,  Kiichiro Mukai ,  Takahiro Daikoku ,  Shigekazu Kieda ,  Keijiro Shindo ,  Kenshiro Tamura

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01L21/67103 ,  H01J37/32935 ,  H01L21/67069

摘要： A dry etching apparatus is disclosed, in which the temperature of an article to be etched, placed on a wafer table, is controlled by a liquefied gas and a heater and the height of the surface of the liquefied gas can be varied arbitrarily. This apparatus enables the controlling of the temperature of the article to be done with a high accuracy over a wide range of low levels. Therefore, a low-temperature dry etching operation, which cannot otherwise be attained by a conventional apparatus of this kind, can be carried out.

摘要翻译： 公开了一种干蚀刻装置，其中放置在晶片台上的待蚀刻制品的温度由液化气和加热器控制，并且液化气表面的高度可以任意变化。 该装置能够在宽范围的低水平下以高精度控制制品的温度。 因此，可以进行这种常规装置不能达到的低温干蚀刻操作。

公开(公告)号：US4943344A

公开(公告)日：1990-07-24

申请号：US362099

申请日：1989-06-06

申请人： Shinichi Tachi ,  Kazunori Tsujimoto ,  Sadayuki Okudaira ,  Kiichiro Mukai

发明人： Shinichi Tachi ,  Kazunori Tsujimoto ,  Sadayuki Okudaira ,  Kiichiro Mukai

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01L21/3065

CPC分类号： H01L21/3065

摘要： A deep trench is formed by carrying out etching by using an etching gas free of carbon and silicon, which contains at least one member selected from the group consisting of fluorine, chlorine and bromine, while maintaining an article to be etched at such a temperature that the reaction probability between silicon and fluorine, chlorine or bromine contained in the etching gas is less than 1/10 of the reaction probability at 20.degree. C. According to this method, a deep trench having a very narrow width and a large aspect ratio, which cannot be formed according to the conventional method, can be formed very promptly with much reduced side etching.

摘要翻译： 通过使用不含碳和硅的蚀刻气体进行蚀刻而形成深沟槽，该蚀刻气体含有选自氟，氯和溴中的至少一种，同时保持要蚀刻的制品在如下温度 蚀刻气体中所含的硅与氟，氯或溴之间的反应概率小于20℃反应概率的1/10。根据该方法，具有非常窄的宽度和大的纵横比的深沟槽， 可以非常迅速地形成根据常规方法不能形成的侧面蚀刻。

公开(公告)号：US4911812A

公开(公告)日：1990-03-27

申请号：US258468

申请日：1988-10-17

申请人： Katsuyoshi Kudo ,  Yoshinao Kawasaki ,  Minolu Soraoka ,  Tsunehiko Tsubone ,  Kazunori Tsujimoto ,  Shinichi Tachi ,  Saadyuki Okudaira

发明人： Katsuyoshi Kudo ,  Yoshinao Kawasaki ,  Minolu Soraoka ,  Tsunehiko Tsubone ,  Kazunori Tsujimoto ,  Shinichi Tachi ,  Saadyuki Okudaira

IPC分类号： H01L21/00 ,  H01L21/687

CPC分类号： H01L21/67109 ,  H01L21/68714

摘要： The present invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises the steps of forming a treating gas into a plasma under reduced pressure, utilizing the plasma to treat a specimen cooled to a low temperature less than 0.degree. C. under reduced pressure, and maintaining at least an exposed surface to an atmosphere at which the specimen is treated except a specimen place surface of a specimen table on which the specimen is placed at a temperature above a dew point temperature of gases under the atmosphere; and a plasma treating apparatus comprises a treating chamber, means for reducing and exhausting the interior of the treating chamber, means for introducing a treating gas into the treating chamber, means for forming the treating gas into a plasma, a specimen table on which the specimen treated by utilizing the plasma is placed within the treating chamber, means for cooling the specimen table so as to be able to cool the specimen to a low temperature less than 0.degree. C., and means for maintaining at least an exposed surface within the treating chamber except a specimen place surface of the specimen table at a temperature above a dew point temperature of gases within said treating chamber, whereby even if the specimen table is cooled to a low temperature less than 0.degree. C., adsorption of the atmospheric gas to the exposed surface within the treating chamber which is at least a pressure-reduced atmosphere exposed surface except a specimen place surface of the specimen table is suppressed, and principally the occurrence of foreign matter can be prevented and the lowering of the yield of the specimen causes by the foreign matter can be prevented.

摘要翻译： 本发明涉及等离子体处理方法及其装置。 等离子体处理方法包括以下步骤：在减压下将处理气体形成到等离子体中，利用等离子体在减压下处理冷却至低于0℃的低温的样品，并将至少暴露的表面保持在 除了在大气下的气体的露点温度以上的温度下放置试样的试样台的试样的位置表面以外，对试样进行处理的气氛; 等离子体处理装置包括处理室，用于减少和排出处理室内部的装置，用于将处理气体引入处理室的装置，用于将处理气体形成为等离子体的装置，其上的样品 通过利用等离子体处理的处理室被放置在处理室内，用于冷却样品台的装置，以便能够将样品冷却至低于0℃的低温，以及用于在处理室内至少保持暴露表面的装置 除了所述处理室内的气体的露点温度以上的温度以外的试样台的试样位置表面，由此即使将试样台冷却至低于0℃的低温，也可以将气氛吸附至 处理室内的暴露表面被抑制为至少是除了样品台的试样位置表面之外的减压气氛暴露表面， 并且主要可以防止异物的发生，并且可以防止异物引起的试样的产量的降低。