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公开(公告)号：US4857137A
公开(公告)日：1989-08-15
申请号：US9784
申请日：1987-02-02
IPC分类号： C23C14/22 , H01J37/02 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/316 , H01L21/3213
CPC分类号： H01L21/02019 , C23C14/221 , H01J37/026 , H01L21/02164 , H01L21/02263 , H01L21/02266 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/31608 , H01L21/32136
摘要： An ion beam is allowed to hit the surface of a target and the resulting forward scattered particle beam is then allowed to hit the surface of a workpiece, thereby etching or modifying the surface of the workpiece or depositing a film on the surface of the workpiece. By bombardment of ions with the target, electric charges possessed by the ion beam are lost, and only the thus neutralized forward scattered particle beam is allowed to hit the surface of the workpiece, and thus the said surface treatment can be carried out without any electrically charging trouble.
摘要翻译： 允许离子束撞击靶的表面，然后使得到的前向散射的粒子束撞击工件的表面，从而蚀刻或改变工件的表面或在工件的表面上沉积膜。 通过用目标轰击离子，离子束所具有的电荷损失，只有这样被中和的前向散射的粒子束能够撞击到工件的表面，因此所述表面处理可以在没有任何电 充电麻烦
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公开(公告)号：US5643473A
公开(公告)日：1997-07-01
申请号：US453336
申请日：1995-05-30
IPC分类号： H01L21/311 , H01L21/3213 , H05H1/00 , H01L21/00
CPC分类号： H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： A dry etching method is disclosed, in which the pressure of etching gas in a reaction chamber, the bias voltage applied to article to be etched, and the temperature of the article to be etched object are set so that the etching rate for the article to be etched is greater than 0.2 .mu.m/min, a ratio of the length of side etching in the article to be etched to the depth of etching therein is less than 1/100, and a ratio of the etching rate for the article to be etched to the etching rate for a mask formed thereon is greater than 10. Thus, the dry etching method can satisfy three requirements (that is, a high etching rate, a high selection ratio and marked anisotropy in etching) at the same time, although conventional dry etching methods can satisfy only two of three requirements.
摘要翻译： 公开了一种干蚀刻方法，其中设置反应室中的蚀刻气体的压力，施加到待蚀刻的制品的偏压和被蚀刻物体的温度，使得制品的蚀刻速率 被蚀刻的厚度大于0.2μm/ min，待蚀刻制品中的侧蚀刻长度与蚀刻深度的比值小于+ E，fra 1/100 + EE，蚀刻比 要蚀刻的制品的速率对于其上形成的掩模的蚀刻速率大于10.因此，干蚀刻方法可以满足三个要求（即蚀刻速率高，选择率高，蚀刻中具有显着的各向异性） 同时，尽管传统的干蚀刻方法只能满足三个要求中的两个。
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公开(公告)号：US5147500A
公开(公告)日：1992-09-15
申请号：US598808
申请日：1990-10-10
IPC分类号： C23F4/00 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： C23F4/00 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： A dry etching method is disclosed, in which the pressure of etching gas in a reaction chamber, the bias voltage applied to article to be etched, and the temperature of the article to be etched object are set so that the etching rate for the article to be etched is greater than 0.2 .mu.m/min, a ratio of the length of side etching in the article to be etched to the depth of etching therein is less than 1/100, and a ratio of the etching rate for the article to be etched to the etching rate for a mask formed thereon is greater than 10. Thus, the dry etching method can satisfy three requirements (that is, a high etching rate, a high selection ratio and marked anisotropy in etching) at the same time, although conventional dry etching methods can satisfy only two of three requirements.
摘要翻译： 公开了一种干蚀刻方法，其中设置反应室中的蚀刻气体的压力，施加到待蚀刻的制品的偏压和被蚀刻物体的温度，使得制品的蚀刻速率 被蚀刻的厚度大于0.2μm/ min，待蚀刻制品中的侧蚀刻长度与蚀刻深度之比小于1/100，制品的蚀刻速率比为 蚀刻到其上形成的掩模的蚀刻速率大于10.因此，干蚀刻方法可以同时满足三个要求（即蚀刻速率高，蚀刻中的高选择率和显着的各向异性），尽管 常规的干蚀刻方法只能满足三个要求中的两个。
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公开(公告)号：US4943344A
公开(公告)日：1990-07-24
申请号：US362099
申请日：1989-06-06
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065
CPC分类号： H01L21/3065
摘要： A deep trench is formed by carrying out etching by using an etching gas free of carbon and silicon, which contains at least one member selected from the group consisting of fluorine, chlorine and bromine, while maintaining an article to be etched at such a temperature that the reaction probability between silicon and fluorine, chlorine or bromine contained in the etching gas is less than 1/10 of the reaction probability at 20.degree. C. According to this method, a deep trench having a very narrow width and a large aspect ratio, which cannot be formed according to the conventional method, can be formed very promptly with much reduced side etching.
摘要翻译： 通过使用不含碳和硅的蚀刻气体进行蚀刻而形成深沟槽，该蚀刻气体含有选自氟，氯和溴中的至少一种，同时保持要蚀刻的制品在如下温度 蚀刻气体中所含的硅与氟，氯或溴之间的反应概率小于20℃反应概率的1/10。根据该方法，具有非常窄的宽度和大的纵横比的深沟槽， 可以非常迅速地形成根据常规方法不能形成的侧面蚀刻。
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公开(公告)号：US4956043A
公开(公告)日：1990-09-11
申请号：US192178
申请日：1988-05-10
申请人： Masafumi Kanetomo , Shinichi Tachi , Kazunori Tsujimoto , Kiichiro Mukai , Takahiro Daikoku , Shigekazu Kieda , Keijiro Shindo , Kenshiro Tamura
发明人： Masafumi Kanetomo , Shinichi Tachi , Kazunori Tsujimoto , Kiichiro Mukai , Takahiro Daikoku , Shigekazu Kieda , Keijiro Shindo , Kenshiro Tamura
CPC分类号： H01L21/67103 , H01J37/32935 , H01L21/67069
摘要： A dry etching apparatus is disclosed, in which the temperature of an article to be etched, placed on a wafer table, is controlled by a liquefied gas and a heater and the height of the surface of the liquefied gas can be varied arbitrarily. This apparatus enables the controlling of the temperature of the article to be done with a high accuracy over a wide range of low levels. Therefore, a low-temperature dry etching operation, which cannot otherwise be attained by a conventional apparatus of this kind, can be carried out.
摘要翻译： 公开了一种干蚀刻装置，其中放置在晶片台上的待蚀刻制品的温度由液化气和加热器控制，并且液化气表面的高度可以任意变化。 该装置能够在宽范围的低水平下以高精度控制制品的温度。 因此，可以进行这种常规装置不能达到的低温干蚀刻操作。
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公开(公告)号：US4599135A
公开(公告)日：1986-07-08
申请号：US655438
申请日：1984-09-28
CPC分类号： C23C16/402 , C23C16/452
摘要： In a thin film deposition apparatus, means for depositing a film on a substrate and means for etching the deposited film to make flat the surface thereof, are provided in a reaction vessel independently of each other. This apparatus can rapidly deposit the film without rising the temperature of the substrate excessively. Further, since the deposition means and etching means are independent of each other, the deposition of a film on the substrate and the planarization of the surface of the deposited film can be achieved under various conditions.
摘要翻译： 在薄膜沉积装置中，在反应容器中彼此独立地设置有用于在基板上沉积膜的装置和用于蚀刻沉积膜以使其表面平坦的装置。 该装置可以快速沉积薄膜，而不会过度地升高基板的温度。 此外，由于沉积装置和蚀刻装置彼此独立，因此可以在各种条件下实现膜在基板上的沉积和沉积膜的表面的平坦化。
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公开(公告)号：US4636833A
公开(公告)日：1987-01-13
申请号：US590870
申请日：1984-03-19
IPC分类号： G11C11/411 , H01L21/822 , H01L21/8229 , H01L27/04 , H01L27/07 , H01L27/102 , H01L23/48
CPC分类号： H01L27/0788 , H01L27/1025
摘要： A semiconductor device comprising a first electrode, a dielectric film and a second electrode which are stacked and formed on a semiconductor layer with the second electrode in contact with the semiconductor layer. A diode is formed of the second electrode and the semiconductor layer, and a capacitor is formed of the first electrode, the dielectric film and the second electrode.
摘要翻译： 一种半导体器件，包括第一电极，电介质膜和第二电极，所述第一电极，电介质膜和第二电极层叠并形成在半导体层上，其中第二电极与半导体层接触。 二极管由第二电极和半导体层形成，电容器由第一电极，电介质膜和第二电极形成。
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公开(公告)号：US4937650A
公开(公告)日：1990-06-26
申请号：US247343
申请日：1988-09-21
IPC分类号： H01L27/10 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L29/45 , H01L29/51 , H01L29/92 , H01L29/94
CPC分类号： H01L29/456 , H01L27/10808 , H01L28/40 , H01L29/516 , H01L29/94 , Y10S257/915
摘要： A semiconductor device having a large-capacitance capacitor in which an insulator film is formed underneath a film made of a material having a high dielectric constant, such as tantalum oxide, in such a manner that a portion of the insulator film underneath a defect region which is undesirably thin is thicker than other portions of the insulator film, thereby preventing occurrence of a failure in terms of dielectric strength and deterioration of the lifetime of the capacitor which would otherwise be caused by the existence of the defect region. Also disclosed is a process for producing such semiconductor device. Thus, it is possible to effectively prevent occurrence of problems which would otherwise be caused when a material having a high dielectric constant, such as tantalum oxide, is employed as a dielectric film of a capacitor, so that the reliability of a semiconductor having a large-capacitance capacitor is greatly improved.
摘要翻译： 一种具有大容量电容器的半导体器件，其中绝缘膜形成在由诸如氧化钽之类的具有高介电常数的材料制成的膜下面，绝缘膜的一部分位于缺陷区 不希望地薄的厚度比绝缘膜的其它部分厚，从而防止由于缺陷区域的存在而引起的介电强度和电容器寿命的劣化的发生。 还公开了用于制造这种半导体器件的方法。 因此，可以有效地防止当采用具有高介电常数的材料（例如氧化钽）作为电容器的电介质膜时会引起的问题的发生，使得具有大的半导体的可靠性 电容电容大大提高。
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公开(公告)号：US06551765B1
公开(公告)日：2003-04-22
申请号：US09477625
申请日：2000-01-04
申请人： Kiichiro Mukai , Akira Sato , Katuyuki Soeda
发明人： Kiichiro Mukai , Akira Sato , Katuyuki Soeda
IPC分类号： G03C174
CPC分类号： H01L21/6715 , B05B17/0638 , B05C11/06 , G03F7/162
摘要： A coating apparatus for forming a film on a surface of a substrate to be coated, comprises a holding table for holding the substrate to be coated, a discharge head, containing a coating solution and formed with a plurality of discharge holes at a portion thereof opposing the substrate to be coated, for discharging the coating solution, a fine-vibration plate for applying fine vibrations to discharge the coating solution and driving motor for driving the holding table and the discharge head relative to each other.
摘要翻译： 一种用于在待涂覆的基材的表面上形成膜的涂布装置，包括用于保持待涂布的基材的保持台，包含涂布溶液的排出头，在其相对的部分形成有多个排出孔 待涂布的基材，用于排出涂布溶液，用于施加微细振动以排出涂布溶液的微细振动板和用于驱动保持台和排出头的驱动马达相对于彼此。
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公开(公告)号：US4842891A
公开(公告)日：1989-06-27
申请号：US153606
申请日：1988-02-08
申请人： Hiroshi Miyazaki , Yoshio Homma , Kiichiro Mukai
发明人： Hiroshi Miyazaki , Yoshio Homma , Kiichiro Mukai
IPC分类号： C23C16/06 , C23C16/14 , C23C16/50 , H01L21/3205 , H01L23/532
CPC分类号： H01L23/53228 , C23C16/14 , H01L21/32051 , H01L2924/0002
摘要： A copper film is formed by bringing the vapor of an inorganic compound of copper, such as cuprous nitrate that vaporizes upon heating, into contact with a reducing gas in the reaction chamber, so that copper ions are reduced into metal copper that is to be deposited on a substrate. The obtained copper film exhibits very good step coverage and contains very little impurities, lending itself well for forming interconnections of a semiconductor device that has a high degree of integration.
摘要翻译： 通过使加热时蒸发的硝酸亚铜等铜的无机化合物的蒸气与反应室中的还原性气体接触而形成铜膜，使得铜离子还原为要沉积的金属铜 在基板上。 所获得的铜膜表现出非常好的阶梯覆盖，并且含有极少量的杂质，对于形成具有高集成度的半导体器件的互连而言，其本身很好。
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