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公开(公告)号：US4911812A
公开(公告)日：1990-03-27
申请号：US258468
申请日：1988-10-17
申请人： Katsuyoshi Kudo , Yoshinao Kawasaki , Minolu Soraoka , Tsunehiko Tsubone , Kazunori Tsujimoto , Shinichi Tachi , Saadyuki Okudaira
发明人： Katsuyoshi Kudo , Yoshinao Kawasaki , Minolu Soraoka , Tsunehiko Tsubone , Kazunori Tsujimoto , Shinichi Tachi , Saadyuki Okudaira
IPC分类号： H01L21/00 , H01L21/687
CPC分类号： H01L21/67109 , H01L21/68714
摘要： The present invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises the steps of forming a treating gas into a plasma under reduced pressure, utilizing the plasma to treat a specimen cooled to a low temperature less than 0.degree. C. under reduced pressure, and maintaining at least an exposed surface to an atmosphere at which the specimen is treated except a specimen place surface of a specimen table on which the specimen is placed at a temperature above a dew point temperature of gases under the atmosphere; and a plasma treating apparatus comprises a treating chamber, means for reducing and exhausting the interior of the treating chamber, means for introducing a treating gas into the treating chamber, means for forming the treating gas into a plasma, a specimen table on which the specimen treated by utilizing the plasma is placed within the treating chamber, means for cooling the specimen table so as to be able to cool the specimen to a low temperature less than 0.degree. C., and means for maintaining at least an exposed surface within the treating chamber except a specimen place surface of the specimen table at a temperature above a dew point temperature of gases within said treating chamber, whereby even if the specimen table is cooled to a low temperature less than 0.degree. C., adsorption of the atmospheric gas to the exposed surface within the treating chamber which is at least a pressure-reduced atmosphere exposed surface except a specimen place surface of the specimen table is suppressed, and principally the occurrence of foreign matter can be prevented and the lowering of the yield of the specimen causes by the foreign matter can be prevented.
摘要翻译： 本发明涉及等离子体处理方法及其装置。 等离子体处理方法包括以下步骤：在减压下将处理气体形成到等离子体中，利用等离子体在减压下处理冷却至低于0℃的低温的样品，并将至少暴露的表面保持在 除了在大气下的气体的露点温度以上的温度下放置试样的试样台的试样的位置表面以外，对试样进行处理的气氛; 等离子体处理装置包括处理室，用于减少和排出处理室内部的装置，用于将处理气体引入处理室的装置，用于将处理气体形成为等离子体的装置，其上的样品 通过利用等离子体处理的处理室被放置在处理室内，用于冷却样品台的装置，以便能够将样品冷却至低于0℃的低温，以及用于在处理室内至少保持暴露表面的装置 除了所述处理室内的气体的露点温度以上的温度以外的试样台的试样位置表面，由此即使将试样台冷却至低于0℃的低温，也可以将气氛吸附至 处理室内的暴露表面被抑制为至少是除了样品台的试样位置表面之外的减压气氛暴露表面， 并且主要可以防止异物的发生，并且可以防止异物引起的试样的产量的降低。
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公开(公告)号：US20050074977A1
公开(公告)日：2005-04-07
申请号：US10402949
申请日：2003-04-01
IPC分类号： H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32449 , H01J37/32082 , H01J37/32192 , H01J37/3244 , H01J37/32834 , H01J37/32935 , H01J2237/3322 , H01J2237/334 , H01J2237/3343 , H01L21/02071 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.
摘要翻译： 用于干蚀刻的方法和装置改变真空室的有效泵送速度和气体流速中的至少一个，以改变样品在第一和第二条件之间的蚀刻图案侧壁的处理。 第一和第二条件包括存在或不存在沉积膜，或锥角的存在，不存在或形状。 考虑了用于控制第一和第二条件的各种参数。
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公开(公告)号：US6033481A
公开(公告)日：2000-03-07
申请号：US225971
申请日：1999-01-06
申请人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
发明人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
CPC分类号： H01J37/3222 , H01J37/32082 , H01J37/32678 , H01J2237/3341
摘要： A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.
摘要翻译： 公开了能够在大范围内产生均匀的等离子体并能够实现高蚀刻选择性和高纵横比的微小加工的功耗降低的等离子体处理装置。 利用由超高频带和磁场中的电磁波引起的电子回旋共振现象，在容纳加工样品的真空容器中产生高密度等离子体，并且使用该等离子体蚀刻处理样品的表面。 用于产生等离子体的超高频带中的电磁波从由石墨或硅组成的平面导电板辐射，该导电板与被处理样品的表面相对地设置在真空容器内部的空间中。 通过在超高频带中使用电磁波可以产生低解离度的高密度等离子体，结果可以提高蚀刻反应的可控性。 此外，通过用于辐射电磁波的平面导电板的表面与等离子体之间的反应可以增加蚀刻中有效的自由基。
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公开(公告)号：US5318667A
公开(公告)日：1994-06-07
申请号：US34126
申请日：1993-03-18
IPC分类号： H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00
CPC分类号： H01L21/3065 , H01J37/32082 , H01J37/32192 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01J37/32935 , H01J37/32972 , H01L21/02071 , H01L21/30655 , H01L21/31116 , H01L21/32136 , H01L21/32137 , H01J2237/3322 , H01J2237/334 , H01J2237/3343 , Y10S438/913 , Y10S438/978
摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameter for controlling the first and second conditions are contemplated.
摘要翻译： 用于干蚀刻的方法和装置改变真空室的有效泵送速度和气体流速中的至少一个，以改变样品在第一和第二条件之间的蚀刻图案侧壁的处理。 第一和第二条件包括存在或不存在沉积膜，或锥角的存在，不存在或形状。 考虑了用于控制第一和第二条件的各种参数。
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公开(公告)号：US5242539A
公开(公告)日：1993-09-07
申请号：US859336
申请日：1992-03-27
申请人： Takao Kumihashi , Kazunori Tsujimoto , Shinichi Tachi , Masafumi Kanetomo , Junichi Kobayashi , Tatehito Usui , Nobuyuki Mise
发明人： Takao Kumihashi , Kazunori Tsujimoto , Shinichi Tachi , Masafumi Kanetomo , Junichi Kobayashi , Tatehito Usui , Nobuyuki Mise
IPC分类号： H01L21/302 , H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/02071 , H01J37/32082 , H01J37/32192 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/32136 , H01L21/32137 , H01J2237/3322 , H01J2237/3343
摘要： A plasma treatment method and apparatus utilize various gas inlet and outlet structure arrangements to optimize treatment characteristics for a semiconductor wafer. A buffer zone is created between gas inlets and the discharge zone of the vacuum treatment chamber to enhance uniformity of gas flow. The evacuation arrangement enables reactant gas to be exhausted uniformly to reduce gas residence time below a threshold while maintaining optimum flow rates and etch uniformity at low effective exhaust speeds.
摘要翻译： 等离子体处理方法和装置利用各种气体入口和出口结构布置来优化半导体晶片的处理特性。 在气体入口和真空处理室的排放区之间产生缓冲区，以增强气体流动的均匀性。 排气装置使反应气体均匀排气，以将气体停留时间降低到阈值以下，同时在低有效排气速度下保持最佳流速和蚀刻均匀性。
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公开(公告)号：US4985114A
公开(公告)日：1991-01-15
申请号：US418223
申请日：1989-10-06
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/32139 , H01L21/30655 , H01L21/3085 , H01L21/31144 , Y10S438/913
摘要： A dry etching method including the steps of introducing etching and deposition gases alternately into a reaction chamber at predetermined time intervals, etching the exposed surface of an article to be etched and applying deposition to the surface film thereof alternately by making plasma generated by applying power to the etching and deposition gases introduced into the reaction chamber come in contact with the article to be etched in the reaction chamber in order to etch the surface, is characterized in that the power is applied after the passage of predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced and cut off when the introduction of the etching gas is suspended.
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公开(公告)号：US06333273B1
公开(公告)日：2001-12-25
申请号：US09648772
申请日：2000-08-28
IPC分类号： H01L2100
CPC分类号： H01J37/32449 , H01J37/32082 , H01J37/32192 , H01J37/3244 , H01J37/32834 , H01J37/32935 , H01J2237/3322 , H01J2237/334 , H01J2237/3343 , H01L21/02071 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.
摘要翻译： 用于干蚀刻的方法和装置改变真空室的有效泵送速度和气体流速中的至少一个，以改变样品在第一和第二条件之间的蚀刻图案侧壁的处理。 第一和第二条件包括存在或不存在沉积膜，或锥角的存在，不存在或形状。 考虑了用于控制第一和第二条件的各种参数。
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公开(公告)号：US6136721A
公开(公告)日：2000-10-24
申请号：US480477
申请日：2000-01-11
IPC分类号： H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/00
CPC分类号： H01J37/32449 , H01J37/32082 , H01J37/32192 , H01J37/3244 , H01J37/32834 , H01J37/32935 , H01L21/02071 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/32136 , H01L21/32137 , H01J2237/3322 , H01J2237/334 , H01J2237/3343
摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.
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公开(公告)号：US4992136A
公开(公告)日：1991-02-12
申请号：US223570
申请日：1988-07-25
IPC分类号： H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/32135 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： An article to be etched is contacted with a plasma of a mixed gas containing an etching gas and a film forming gas or a surface modification gas at a low temperature to effect the dry etching of the article, whereby the selectivity of etching can be made very high and the inclination angle of the side wall of pattern can be controlled at a desired level.
摘要翻译： 待蚀刻的制品在低温下与含有蚀刻气体和成膜气体或表面改性气体的混合气体的等离子体接触以实现制品的干蚀刻，从而可以非常地进行蚀刻的选择性 可以将图案的侧壁的倾斜角度控制在期望的水平。
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公开(公告)号：US4857137A
公开(公告)日：1989-08-15
申请号：US9784
申请日：1987-02-02
IPC分类号： C23C14/22 , H01J37/02 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/316 , H01L21/3213
CPC分类号： H01L21/02019 , C23C14/221 , H01J37/026 , H01L21/02164 , H01L21/02263 , H01L21/02266 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/31608 , H01L21/32136
摘要： An ion beam is allowed to hit the surface of a target and the resulting forward scattered particle beam is then allowed to hit the surface of a workpiece, thereby etching or modifying the surface of the workpiece or depositing a film on the surface of the workpiece. By bombardment of ions with the target, electric charges possessed by the ion beam are lost, and only the thus neutralized forward scattered particle beam is allowed to hit the surface of the workpiece, and thus the said surface treatment can be carried out without any electrically charging trouble.
摘要翻译： 允许离子束撞击靶的表面，然后使得到的前向散射的粒子束撞击工件的表面，从而蚀刻或改变工件的表面或在工件的表面上沉积膜。 通过用目标轰击离子，离子束所具有的电荷损失，只有这样被中和的前向散射的粒子束能够撞击到工件的表面，因此所述表面处理可以在没有任何电 充电麻烦
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