-
31.发明申请公开(公告)号：US20070087568A1
公开(公告)日：2007-04-19
申请号：US11582880
申请日：2006-10-17
IPC分类号： C03C15/00 , H01L21/306 , H01L21/302
CPC分类号： H01L21/6708 , H01L21/67075 , Y10S134/902
摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.
-
公开(公告)号：US20060264157A1
公开(公告)日：2006-11-23
申请号：US11433701
申请日：2006-05-11
CPC分类号： B24B37/04 , B24B57/02 , H01L21/02024
摘要： This wafer polishing apparatus includes: a polishing plate having a polishing pad; a carrier plate which is placed facing the polishing pad and which slides and presses wafers against the polishing pad, while rotating in a state of holding the wafers; and an abrasive slurry supply device, wherein the abrasive slurry supply device is able to supply different abrasive slurries, each of the abrasive slurries contains abrasives of which the average grain size is different from those contained in the other abrasive slurries. This method for polishing wafers includes: while supplying an abrasive slurry to a surface of a polishing pad, sliding and pressing wafers against the polishing pad, wherein different abrasive slurries are supplied to the surface of the polishing pad, and each of the abrasive slurries contains abrasives of which the average grain size is different from those contained in the other abrasive slurries.
摘要翻译： 该晶片抛光装置包括：具有抛光垫的抛光板; 载体板，其面向抛光垫放置并且在保持晶片的状态下旋转的同时将晶片滑动并压靠在抛光垫上; 和磨料浆料供应装置，其中磨料浆料供应装置能够供应不同的研磨浆料，每个研磨浆料含有平均粒径与其它磨料浆料中所含磨料不同的研磨剂。 抛光晶片的这种方法包括：当将研磨浆料供应到抛光垫的表面时，将晶片滑动并压靠抛光垫，其中不同的磨料浆料被供应到抛光垫的表面，并且每个磨料浆料包含 研磨剂的平均粒径与其他磨料浆料中所含的磨粒不同。
-
公开(公告)号：US08466071B2
公开(公告)日：2013-06-18
申请号：US12162829
申请日：2007-01-24
IPC分类号： H01L21/302
CPC分类号： H01L21/30604 , H01L21/02019 , H01L21/6708
摘要： An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.
摘要翻译： 本发明的目的是提供一种用于蚀刻单晶片的方法，其有效地实现了晶片的高平坦度和生产率的提高。 在用于蚀刻单个晶片的方法中，旋转从硅单晶锭切片的单个薄盘状晶片，并且用提供给其的蚀刻溶液蚀刻晶片的前表面。 在该方法中，分别在晶片的径向的不同部分分别在晶片的正面上方设置多个供给喷嘴， 然后改变选自多个供应喷嘴的蚀刻溶液的温度，种类和供给流量的一个或多个条件。
-
公开(公告)号：US07906438B2
公开(公告)日：2011-03-15
申请号：US11669431
申请日：2007-01-31
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/6708 , H01L21/02019 , H01L21/30604
摘要： An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer 11. The singe wafer etching apparatus includes a plurality of supply nozzles 26, 27 capable of discharging the etching solution 14 from discharge openings 26a, 27a onto the front surface of the wafer 11, nozzle-moving devices each capable of independently moving the plurality of supply nozzles 28, 29, and an etching solution supplying device 30 for supplying the etching solution 14 to each of the plurality of supply nozzles and discharging the etching solution 14 from each of the discharge openings to the front surface of the wafer 11.
摘要翻译： 本发明的目的是提供一种实现晶片的高平坦度和提高其生产率的单晶片蚀刻装置。 在单晶片蚀刻装置中，将从硅单晶锭切片的单个薄片状晶片安装在晶片卡盘上并在其上纺丝，并且用通过离心力供给的蚀刻溶液蚀刻晶片的整个前表面 单晶晶片蚀刻装置包括能够将蚀刻溶液14从排出口26a，27a排出到晶片11的前表面上的多个供给喷嘴26,27，各喷嘴移动装置 独立地移动多个供给喷嘴28,29，以及用于将蚀刻液14供给到多个供给喷嘴中的每一个的蚀刻液供给装置30，将蚀刻液14从各喷出口排出到 晶片11。
-
公开(公告)号：US20110021025A1
公开(公告)日：2011-01-27
申请号：US12841015
申请日：2010-07-21
申请人： Tomohiro Hashii , Kenji Aoki
发明人： Tomohiro Hashii , Kenji Aoki
IPC分类号： H01L21/302
CPC分类号： H01L21/02024 , H01L23/544 , H01L2223/54406 , H01L2223/54433 , H01L2223/54453 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： A laser-marked semiconductor wafer having a good flatness in the vicinity of laser mark-printed sites is produced by a method comprising a slicing step; a planarization step; a laser mark printing step; a grinding step; an etching step; and a polishing step.
摘要翻译： 通过包括切片步骤的方法产生激光标记印刷位置附近具有良好平坦度的激光标记半导体晶片; 平面化步骤; 激光打标步骤; 研磨步骤; 蚀刻步骤; 和抛光步骤。
-
公开(公告)号：US07648890B2
公开(公告)日：2010-01-19
申请号：US11504969
申请日：2006-08-15
CPC分类号： H01L21/6708 , H01L21/02019 , H01L21/30604
摘要： A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching solution over all the surface of the wafer; and a grinding step of grinding the surface of the wafer, in this order, wherein the etching solution used in the single-wafer etching step is an aqueous acid solution which contains hydrogen fluoride, nitric acid, and phosphoric acid in an amount such that the content of which by weight % at a mixing rate of fluoric acid:nitric acid:phosphoric acid is 0.5 to 40%:5 to 50%:5 to 70%, respectively.
摘要翻译： 1.一种硅晶片的制造方法，其特征在于，具有通过将供给喷嘴供给蚀刻液的蚀刻液进行蚀刻的单晶片蚀刻工序，所述蚀刻液通过将硅单晶锭切片而得到的单晶片和薄片晶片的表面旋转， 晶片将蚀刻溶液铺展在晶片的所有表面上; 以及按照该顺序研磨晶片的表面的研磨步骤，其中在单晶片蚀刻步骤中使用的蚀刻溶液是含有氟化氢，硝酸和磷酸的酸性水溶液，其含量使得 其含量以氟酸：硝酸：磷酸的混合比例为0.5〜40％：5〜50％：5〜70％。
-
公开(公告)号：US20100009155A1
公开(公告)日：2010-01-14
申请号：US12501343
申请日：2009-07-10
CPC分类号： B24B37/042 , B24B37/08
摘要： It is to provide a double-side mirror-finished semiconductor wafer having an excellent flatness by conducting a polishing step from rough polishing to finish polishing for simultaneously polishing both surfaces of a raw wafer with the same polishing cloth to reduce the polishing amount of the raw wafer as well as a production method thereof.In method of producing a semiconductor wafer, which comprises a polishing step for finish-polishing both surfaces of a raw wafer while supplying a polishing solution containing abrasives to a polishing cloth, wherein at least two polishing solutions classified by an average particle size of abrasives to be included are supplied into the polishing cloth while changing from a polishing solution containing larger size of abrasives to a polishing solution containing smaller size of abrasives in stages, whereby the polishing step from rough polishing to finish polishing is conducted on both surfaces of the raw wafer simultaneously with the same polishing cloth, whereby the flatness (GBIR) of not more than 0.1 μm is attained even in large-size semiconductor wafers having a diameter of not less than 450 mm.
摘要翻译： 通过从粗抛光进行抛光步骤来提供具有优异平坦度的双面镜面半导体晶片，以完成抛光，同时用相同的抛光布抛光原始晶片的两个表面，以减少生坯的抛光量 晶圆及其制造方法。 一种半导体晶片的制造方法，其特征在于，包括在将研磨布供给含有研磨剂的研磨液供给到研磨布的同时将原料晶片的两面进行精抛光的研磨工序，其中，将至少两种由研磨剂的平均粒径分级的研磨液分配至 被包括的物品在从包含较大尺寸的研磨剂的抛光溶液分阶段提供到抛光布中的同时被供给到包含较小尺寸的研磨剂的抛光溶液中，由此在原始晶片的两个表面上进行从粗抛光到精抛光的抛光步骤 同时使用相同的抛光布，即使在直径不小于450mm的大尺寸半导体晶片中也可获得不大于0.1μm的平坦度（GBIR）。
-
公开(公告)号：US20090004876A1
公开(公告)日：2009-01-01
申请号：US12162829
申请日：2007-01-24
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , H01L21/02019 , H01L21/6708
摘要： An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.
摘要翻译： 本发明的目的是提供一种用于蚀刻单晶片的方法，其有效地实现了晶片的高平坦度和生产率的提高。 在用于蚀刻单个晶片的方法中，旋转从硅单晶锭切片的单个薄盘状晶片，并且用提供给其的蚀刻溶液蚀刻晶片的前表面。 在该方法中，分别在晶片的径向的不同部分分别在晶片的正面上方设置多个供给喷嘴， 然后改变选自多个供应喷嘴的蚀刻溶液的温度，种类和供给流量的一个或多个条件。
-
公开(公告)号：US20080214094A1
公开(公告)日：2008-09-04
申请号：US12031917
申请日：2008-02-15
申请人： Takeo KATOH , Yasuyuki Hashimoto , Kazushige Takaishi , Tomohiro Hashii , Katsuhiko Murayama , Sakae Koyata
发明人： Takeo KATOH , Yasuyuki Hashimoto , Kazushige Takaishi , Tomohiro Hashii , Katsuhiko Murayama , Sakae Koyata
CPC分类号： B24B37/042 , B24B9/14 , B24B37/08 , H01L21/02008 , H01L21/02021
摘要： A method for manufacturing a silicon wafer comprises a slicing step of a silicon single crystal ingot to obtain sliced wafers, a single-side grinding step to grind only one side of a wafer, and a smoothing step to smooth the other side of the wafer by controlling application of etchant depending on surface profile of the other side of the wafer. According to a method of the present invention a silicon wafer that has high flatness, is removed machine working damage, and is reduced of profile change of chamfer to be minimal can be manufactured.
摘要翻译： 硅晶片的制造方法包括：硅单晶锭的切片工序，得到切片晶片，仅研磨晶片的一侧的单面研磨工序，以及使晶片的另一侧平滑化的平滑化工序 控制取决于晶片另一侧的表面轮廓的蚀刻剂的应用。 根据本发明的方法，可以制造具有高平整度的硅晶片，机械加工损坏被去除，并且可以制造倒角的轮廓变化最小化。
-
公开(公告)号：US20070224821A1
公开(公告)日：2007-09-27
申请号：US11597169
申请日：2005-09-02
IPC分类号： C30B33/00
CPC分类号： B24B37/042 , H01L21/02019 , H01L21/30604
摘要： This silicon wafer production process comprises in the order indicated a planarization step, in which the front surface and the rear surface of a wafer are ground or lapped, a single-wafer acid etching step, in which an acid etching liquid is supplied to the surface of the wafer while spinning and the entire wafer surface is etched to control the surface roughness Ra to 0.20 μm or less, and a double-sided simultaneous polishing step, in which the front surface and the rear surface of the acid etched wafer are polished simultaneously. The process may comprise a single-sided polishing step, in which the top and bottom of the acid etched wafer are polished in turn, instead of the double-sided simultaneously polishing step.
摘要翻译： 该硅晶片制造方法按照顺序包括将晶片的前表面和后表面研磨或研磨的平坦化步骤，单晶片酸蚀刻步骤，其中将酸蚀刻液体供应到表面 并且整个晶片表面被蚀刻以将表面粗糙度Ra控制到0.20μm或更小，以及双面同时抛光步骤，其中酸蚀刻晶片的前表面和后表面被同时抛光 。 该方法可以包括单面抛光步骤，其中依次抛光酸蚀晶片的顶部和底部，而不是双面同时抛光步骤。
-
-
-
-
-
-
-
-
-
搜索结果
42 条记录 (耗时 0.021 秒)