公开(公告)号：US07885042B2

公开(公告)日：2011-02-08

申请号：US11870097

申请日：2007-10-10

申请人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

发明人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F41/305 ,  Y10T29/49044 ,  Y10T29/49048

摘要： A giant magneto-resistive effect device having a CPP structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor layer formed between the first and the second nonmagnetic metal layer. The semiconductor layer is an n-type oxide semiconductor. When the first and second nonmagnetic metal layers are formed in order, the first nonmagnetic metal layer is formed prior to the second nonmagnetic metal layer, and an anti-oxidizing layer is formed between the first nonmagnetic metal layer and the semiconductor layer. The anti-oxidizing layer is formed of a material incapable of producing a Schottky barrier upon joining to the semiconductor layer.

摘要翻译： 具有包括间隔层的CPP结构的巨磁阻效应器件，以及间隔层插入在它们之间的固定磁化层和自由层，并以层叠方向施加感测电流。 间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及形成在第一和第二非磁性金属层之间的半导体层。 半导体层是n型氧化物半导体。 当依次形成第一和第二非磁性金属层时，在第二非磁性金属层之前形成第一非磁性金属层，并且在第一非磁性金属层和半导体层之间形成抗氧化层。 抗氧化层由与半导体层接合时不能产生肖特基势垒的材料形成。

公开(公告)号：US07760475B2

公开(公告)日：2010-07-20

申请号：US11685043

申请日：2007-03-12

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

IPC分类号： G11B5/127

CPC分类号： H01F10/1936 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/18 ,  G11B5/3906 ,  H01F10/3272 ,  H01F10/3295 ,  Y10T428/1107

摘要： A magnetoresistance effect element includes a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction variable depending on an external magnetic field, and a nonmagnetic spacer layer disposed between the pinned layer and the free layer. The free layer includes a Heusler alloy layer and a magnetostriction reduction layer made of a 4th group element, a 5th group element, or a 6th group element.

摘要翻译： 磁阻效应元件包括具有固定磁化方向的固定层，具有取决于外部磁场的磁化方向可变的自由层和设置在被钉扎层和自由层之间的非磁性间隔层。 自由层包括Heusler合金层和由第4族元素，第5族元素或第6族元素构成的磁致伸缩层。

公开(公告)号：US20080112096A1

公开(公告)日：2008-05-15

申请号：US11934979

申请日：2007-11-05

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

IPC分类号： G11B5/33

CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3993 ,  H01F10/3254 ,  H01L43/10

摘要： The thickness of the semiconductor layer forming a part of the spacer layer is set in the thickness range for a transitional area showing conduction performance halfway between ohmic conduction and semi-conductive conduction in relation to the junction of the semiconductor layer with the first nonmagnetic metal layer and the second nonmagnetic metal layer. This permits the specific resistance of the spacer layer to be greater than that of an ohomic conduction area, so that spin scattering and diffusion depending on a magnetized state increases, resulting in an increase in the MR ratio. The CPP-GMR device can also have a suitable area resistivity (AR) value.If the device can have a suitable area resistivity and a high MR ratio, it is then possible to obtain more stable output power in low current operation than ever before, and extend the service life of the device as well. The device is also lower in resistance than a TMR device, so that significant noise reductions are achievable.

摘要翻译： 形成间隔层的一部分的半导体层的厚度设定在相对于半导体层与第一非磁性金属层的接合部的表现为欧姆导通和半导电传导之间的导通性能的过渡区域的厚度范围 和第二非磁性金属层。 这允许间隔层的比电阻大于欧姆导电面积的电阻，使得依赖于磁化状态的自旋散射和扩散增加，导致MR比的增加。 CPP-GMR装置也可以具有合适的面积电阻率（AR）值。 如果器件可以具有合适的面积电阻率和高的MR比，那么在低电流操作中可以获得比以往更稳定的输出功率，并且延长器件的使用寿命。 该器件的电阻也比TMR器件低，从而可以实现显着的降噪。

公开(公告)号：US20070291422A1

公开(公告)日：2007-12-20

申请号：US11708537

申请日：2007-02-21

申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata ,  Keita Kawamori ,  Koji Shimazawa

发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata ,  Keita Kawamori ,  Koji Shimazawa

IPC分类号： G11B5/39 ,  G11B5/33 ,  G11B5/48

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  H01L43/12 ,  Y10T428/1121

摘要： A method for manufacturing a magnetic field detecting element has the steps of: forming stacked layers by sequentially depositing a pinned layer, a spacer layer, a spacer adjoining layer which is adjacent to the spacer layer, a metal layer, and a Heusler alloy layer in this order, such that the layers adjoin each other; and heat treating the stacked layers in order to form the free layer out of the spacer adjoining layer, the metal layer, and the Heusler alloy layer. The spacer adjoining layer is mainly formed of cobalt and iron, and has a body centered cubic structure, and the metal layer is formed of an element selected from the group consisting of silver, gold, copper, palladium, or platinum, or is formed of an alloy thereof.

摘要翻译： 一种制造磁场检测元件的方法，其特征在于：通过依次沉积与间隔层相邻的钉扎层，间隔层，间隔物邻接层，金属层和Heusler合金层，形成堆叠层 这个顺序，使得这些层彼此相邻; 并且对层叠层进行热处理，以便在间隔物邻接层，金属层和Heusler合金层之间形成自由层。 间隔物邻接层主要由钴和铁形成，并且具有体心立方结构，金属层由选自银，金，铜，钯或铂的元素形成，或者由 其合金。

公开(公告)号：US20070217087A1

公开(公告)日：2007-09-20

申请号：US11723143

申请日：2007-03-16

申请人： Kei Hirata ,  Keita Kawamori ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa

发明人： Kei Hirata ,  Keita Kawamori ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/1936 ,  H01F10/3272 ,  H01L27/222 ,  H01L43/10

摘要： A magnetic thin film has a layer which is formed of an alloy having a ordered crystal structure whose composition formula is represented by XYZ or X2YZ (where X is one or more than one of the elements selected from the group consisting of Co, Ir, Rh, Pt, and Cu, Y is one or more than one of the elements selected from the group consisting of V, Cr, Mn, and Fe, and Z is one or more than one of the elements selected the group consisting of Al, Si, Ge, As, Sb, Bi, In, Ti, and Pb). The alloy contains at least one additive element which is not included in the composition formula of the alloy and which has a Debye temperature that is equal to or less than 300K.

摘要翻译： 磁性薄膜具有由具有有序晶体结构的合金形成的层，其组成式由XYZ或X 2 YZ表示（其中X是选自以下的元素中的一种或多于一种元素： 由Co，Ir，Rh，Pt和Cu组成的组，Y是选自V，Cr，Mn和Fe中的一种或多种元素，Z是一种或多于一种 元素选自Al，Si，Ge，As，Sb，Bi，In，Ti和Pb组成的组）。 该合金含有至少一种添加元素，其不包括在合金的组成式中，并且德拜温度等于或小于300K。

公开(公告)号：US08000066B2

公开(公告)日：2011-08-16

申请号：US11934979

申请日：2007-11-05

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

IPC分类号： G11B5/39

CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3993 ,  H01F10/3254 ,  H01L43/10

摘要： The thickness of the semiconductor layer forming a part of the spacer layer is set in the thickness range for a transitional area showing conduction performance halfway between ohmic conduction and semi-conductive conduction in relation to the junction of the semiconductor layer with the first nonmagnetic metal layer and the second nonmagnetic metal layer. This permits the specific resistance of the spacer layer to be greater than that of an ohmic conduction area, so that spin scattering and diffusion depending on a magnetized state increases, resulting in an increase in the MR ratio. The CPP-GMR device can also have a suitable area resistivity (AR) value. If the device can have a suitable area resistivity and a high MR ratio, it is then possible to obtain more stable output power in low current operation. The device is also lower in resistance than a TMR device, so that significant noise reductions are achievable.

摘要翻译： 形成间隔层的一部分的半导体层的厚度设定在相对于半导体层与第一非磁性金属层的接合部的表现为欧姆导通和半导电传导之间的导通性能的过渡区域的厚度范围 和第二非磁性金属层。 这允许间隔层的比电阻大于欧姆导电区域的电阻率，使得依赖于磁化状态的自旋散射和扩散增加，导致MR比的增加。 CPP-GMR装置也可以具有合适的面积电阻率（AR）值。 如果器件可以具有合适的面积电阻率和高的MR比，则可以在低电流操作中获得更稳定的输出功率。 该器件的电阻也比TMR器件低，从而可以实现显着的降噪。

公开(公告)号：US07895731B2

公开(公告)日：2011-03-01

申请号：US11766926

申请日：2007-06-22

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Kei Hirata ,  Keita Kawamori

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Kei Hirata ,  Keita Kawamori

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/1936 ,  H01F10/3272 ,  H01F41/304 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T29/49025 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048

摘要： A method for manufacturing a magnetic field detecting element having a free layer whose magnetization direction is variable depending on an external magnetic field and a pinned layer whose magnetization direction is fixed and these are stacked with an electrically conductive, nonmagnetic spacer layer sandwiched therebetween, wherein sense current flows in a direction perpendicular to film planes of the magnetic field detecting element. The method comprises: forming a spacer adjoining layer adjacent to the spacer layer, Heusler alloy layer, and a metal layer successively in this order; and forming either at least a part of the pinned layer or the free layer by heating the spacer adjoining layer, the Heusler alloy layer, and the metal layer. The spacer adjoining layer has a layer chiefly made of cobalt and iron. The Heusler alloy layer includes metal which is silver, gold, copper, palladium, or platinum, or an alloy thereof. The metal layer is made of the same.

摘要翻译： 一种磁场检测元件的制造方法，该磁场检测元件具有磁化方向根据外部磁场而变化的自由层，其磁化方向固定的被钉扎层与夹在其间的导电非磁性间隔层堆叠， 电流在垂直于磁场检测元件的膜平面的方向上流动。 该方法包括：依次形成与间隔层相邻的间隔物邻接层，Heusler合金层和金属层; 以及通过加热间隔物邻接层，Heusler合金层和金属层来形成被钉扎层或自由层的至少一部分。 间隔物邻接层具有主要由钴和铁制成的层。 Heusler合金层包括银，金，铜，钯或铂的金属或其合金。 金属层由其制成。

公开(公告)号：US20080106827A1

公开(公告)日：2008-05-08

申请号：US11931219

申请日：2007-10-31

申请人： Koji SHIMAZAWA ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

发明人： Koji SHIMAZAWA ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

IPC分类号： G11B5/33

CPC分类号： G11B5/39 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3993 ,  H01F10/3272 ,  H01F41/306 ,  H01L43/08

摘要： The invention provides a CPP-GMR device comprising a spacer layer. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, and further comprises a work function control layer formed between the first nonmagnetic metal layer and the semiconductor layer and/or between the second nonmagnetic metal layer and the semiconductor layer. The semiconductor layer is an n-type semiconductor, and the work function control layer is made of a material having a work function smaller than that of said first nonmagnetic metal layer, and said second nonmagnetic metal layer. It is thus possible to obtain by far more improved advantages: the semiconductor layer forming a part of the spacer layer can be so thicker than ever while keeping the area resistivity of the device low as desired, ever higher MR performance is achievable, and the variation of the area resistivity of the device can be substantially held back with much more improvements in film performance.

摘要翻译： 本发明提供一种包括间隔层的CPP-GMR装置。 间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层，以及介于第一非磁性金属层和第二非磁性金属层之间的半导体层，还包括功函数控制层 形成在第一非磁性金属层和半导体层之间和/或第二非磁性金属层与半导体层之间。 半导体层是n型半导体，功函数控制层由功函数小于所述第一非磁性金属层的功函数和所述第二非磁性金属层构成。 因此，可以获得更多的改进的优点：形成间隔层的一部分的半导体层可以比以往更厚，同时保持器件的面积电阻率低，可以实现更高的MR性能，并且变化 可以基本上阻止装置的面积电阻率，同时具有更多的薄膜性能的改进。

公开(公告)号：US20070274010A1

公开(公告)日：2007-11-29

申请号：US11725476

申请日：2007-03-20

申请人： Kei Hirata ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Koji Shimazawa

发明人： Kei Hirata ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996

摘要： An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free layer includes a Heusler alloy layer. The Heusler alloy layer contains a Heusler alloy in which atoms of a magnetic metallic element are placed at body-centered positions of unit cells, and an additive element that is a nonmagnetic metallic element that does not constitute the Heusler alloy. At least one of the pinned layer and the free layer includes a region in which the concentration of the additive element increases as the distance from the nonmagnetic conductive layer decreases, the region being adjacent to the nonmagnetic conductive layer.

摘要翻译： MR元件包括非磁性导电层，以及设置成夹持非磁性导电层的被钉扎层和自由层。 每个被钉扎层和自由层包括Heusler合金层。 Heusler合金层包含Heusler合金，其中磁性金属元素的原子被放置在单元电池的体中心位置，而添加元素是不构成Heusler合金的非磁性金属元素。 被钉扎层和自由层中的至少一个包括随着距离非磁性导电层的距离减小的添加元素的浓度增加的区域，该区域与非磁性导电层相邻。

公开(公告)号：US08085512B2

公开(公告)日：2011-12-27

申请号：US12045927

申请日：2008-03-11

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Koji Shimazawa ,  Tsutomu Chou

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Koji Shimazawa ,  Tsutomu Chou

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions depend upon an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer sandwiched between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer sandwiched between the second magnetic layer and the third magnetic layer, wherein the stack is adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack.

摘要翻译： 磁场检测元件包括：堆叠，其包括其磁化方向取决于外部磁场的第一，第二和第三磁性层，第二磁性层位于第一磁性层和第三磁性层之间，第一非磁性层 夹在第一磁性层和第二磁性层之间的中间层和夹在第二磁性层和第三磁性层之间的第二非磁性中间层，其中该堆叠适于使得感测电流沿垂直的方向流动 到其膜表面; 以及偏置磁性层，其设置在所述堆叠的一侧，所述侧面与所述堆叠的空气支承表面相对。