利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

58 records (took 0.011 seconds)

    Method for manufacturing magnetic field detection devices and devices therefrom
    3.
    发明授权
    Method for manufacturing magnetic field detection devices and devices therefrom 失效
    用于制造磁场检测装置和装置的方法

    公开(公告)号：US08012771B2

    公开(公告)日：2011-09-06

    申请号：US12926284

    申请日：2010-11-08

    Applicant: Daniele Pullini ,  Brunetto Martorana ,  Piero Perlo

    Inventor： Daniele Pullini ,  Brunetto Martorana ,  Piero Perlo

    IPC: H01L43/10 ,  H01L29/82

    CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G01R33/06 ,  H01F10/3227 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/301 ,  H01F41/306 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

    Abstract: A method for manufacturing magnetic field detection devices comprises the operations of manufacturing a magneto-resistive element comprising regions with metallic conduction and regions with semi-conductive conduction. The method comprises the following operations: forming metallic nano-particles to obtain regions with metallic conduction; providing a semiconductor substrate; and applying metallic nano-particles to the porous semiconductor substrate to obtain a disordered mesoscopic structure. A magnetic device comprises a spin valve, which comprises a plurality of layers arranged in a stack which in turn comprises at least one free magnetic layer able to be associated to a temporary magnetisation (MT), a spacer layer and a permanent magnetic layer associated to a permanent magnetisation (MP). The spacer element is obtained by means of a mesoscopic structure of nanoparticles in a metallic matrix produced in accordance with the inventive method for manufacturing magneto-resistive elements.

    Abstract translation: 制造磁场检测装置的方法包括制造包含具有金属导电区域和具有半导电传导区域的磁阻元件的操作。 该方法包括以下操作：形成金属纳米颗粒以获得具有金属导电性的区域; 提供半导体衬底; 并将金属纳米颗粒施加到多孔半导体衬底以获得无序的介观结构。 磁性装置包括自旋阀，其包括以堆叠方式布置的多个层，所述多个层又包括至少一个能够与临时磁化（MT）相关的自由磁性层，间隔层和永久磁性层 永久磁化（MP）。 借助于根据用于制造磁阻元件的本发明方法制造的金属基体中的纳米颗粒的介观结构，获得间隔元件。

    MEMORY CELL HAVING NONMAGNETIC FILAMENT CONTACT AND METHODS OF OPERATING AND FABRICATING THE SAME
    4.
    发明申请
    MEMORY CELL HAVING NONMAGNETIC FILAMENT CONTACT AND METHODS OF OPERATING AND FABRICATING THE SAME 有权
    具有非线性光纤接触的存储单元及其操作和制造方法

    公开(公告)号：US20100177561A1

    公开(公告)日：2010-07-15

    申请号：US12352364

    申请日：2009-01-12

    Applicant: Jun Liu ,  Gurtej Sandhu

    Inventor： Jun Liu ,  Gurtej Sandhu

    IPC: G11C11/14 ,  G11C7/00 ,  H01L29/82

    CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/329 ,  H01F41/306 ,  H01F41/307 ,  H01L27/228 ,  Y10S977/70

    Abstract: A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

    Abstract translation: 提供包括非磁性细丝接触的磁性单元结构以及制造该结构的方法。 磁性单元结构包括自由层，钉扎层，自由层和被钉扎层之间的绝缘层，以及绝缘层中的非磁性细丝接触，其电连接自由层和被钉扎层。 非磁性细丝接触由非磁性源层形成，也在自由层和被钉扎层之间。 灯丝接触引导编程电流通过磁性电池结构，使得自由层中编程电流的横截面面积小于结构的横截面。 自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。

    Magnetoresistive element using an organic nonmagnetic layer
    5.
    发明授权
    Magnetoresistive element using an organic nonmagnetic layer 有权
    使用有机非磁性层的磁阻元件

    公开(公告)号：US07248446B2

    公开(公告)日：2007-07-24

    申请号：US10306384

    申请日：2002-11-27

    Applicant: Eric L. Granstrom

    Inventor： Eric L. Granstrom

    IPC: G11B5/31

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F41/306 ,  H01F41/307

    Abstract: A magnetoresistive element has two magnetic layers and a nonmagnetic middle layer having organic molecules disposed between the two magnetic layers. The middle layer is thinner than 5 nm (50 Å). The magnetoresistive element exhibits a magnetoresistive effect as a function of the relative alignment of magnetizations of the first and the second magnetic layers and can be used in a magnetoresistive sensor in the based on GMR or TMR.

    Abstract translation: 磁阻元件具有两个磁性层和在两个磁性层之间设置有有机分子的非磁性中间层。 中间层比5nm（50）薄。 磁阻元件作为第一和第二磁性层的磁化的相对取向的函数呈现磁阻效应，并且可以用于基于GMR或TMR的磁阻传感器中。

    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers
    6.
    发明申请
    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers 失效
    使用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁偏置层中的单轴磁各向异性

    公开(公告)号：US20060222112A1

    公开(公告)日：2006-10-05

    申请号：US11096636

    申请日：2005-03-31

    Applicant: Matthew Carey ,  Jeffrey Childress ,  Eric Fullerton ,  Stefan Maat

    Inventor： Matthew Carey ,  Jeffrey Childress ,  Eric Fullerton ,  Stefan Maat

    IPC: H04L27/06

    CPC classification number: B82Y25/00 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/30 ,  H01F10/3272 ,  H01F41/306 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.

    Abstract translation: 磁阻传感器具有在与介质面对表面基本平行的方向上具有工程磁各向异性的硬偏置层。 硬偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便在其表面上引起各向异性的粗糙度，例如以定向的波纹或小面的形式。 各向异性粗糙度在其上沉积的硬磁偏置层中引起基本平行于面向介质的表面的单轴磁各向异性。

    THIN FILM CONDUCTOR LAYER, MAGNETORESISTIVE ELEMENT USING THE SAME AND METHOD OF PRODUCING THIN FILM CONDUCTOR LAYER
    7.
    发明申请
    THIN FILM CONDUCTOR LAYER, MAGNETORESISTIVE ELEMENT USING THE SAME AND METHOD OF PRODUCING THIN FILM CONDUCTOR LAYER 有权
    薄膜导体层，使用它的磁阻元件和制造薄膜导体层的方法

    公开(公告)号：US20020012206A1

    公开(公告)日：2002-01-31

    申请号：US09336300

    申请日：1999-06-21

    Inventor： HIROYUKI KANNO

    IPC: G11B005/39

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/3996 ,  H01F10/324 ,  H01F41/306

    Abstract: In a magnetoresistive element, deposition of a conductor layer in a DC magnetron sputtering apparatus causes application of tensile stress to the conductor layer, causing the problem of readily producing separation of the conductor layer. In the present invention, a conductor layer is formed so that the crystal face spacing in the direction perpendicular to the film plane is larger than the crystal face spacing of a bulk material. This permits application of compression stress to the conductor layer, preventing separation of the conductor layer.

    Abstract translation: 在磁阻元件中，在DC磁控管溅射装置中的导体层的沉积导致对导体层施加拉伸应力，导致容易产生导体层分离的问题。 在本发明中，形成导体层，使得垂直于膜平面的方向的晶面间距大于散装材料的晶面间距。 这允许对导体层施加压缩应力，防止导体层分离。

    Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
    9.
    发明授权
    Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same 有权
    具有非磁性丝接触的存储单元及其操作和制造方法

    公开(公告)号：US09437809B2

    公开(公告)日：2016-09-06

    申请号：US14290477

    申请日：2014-05-29

    Applicant: Micron Technology, Inc.

    Inventor： Jun Liu ,  Gurtej Sandhu

    IPC: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/32 ,  H01L27/22 ,  H01F41/30

    CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/329 ,  H01F41/306 ,  H01F41/307 ,  H01L27/228 ,  Y10S977/70

    Abstract: A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

    Abstract translation: 提供包括非磁性细丝接触的磁性单元结构以及制造该结构的方法。 磁性单元结构包括自由层，钉扎层，自由层和被钉扎层之间的绝缘层，以及绝缘层中的非磁性细丝接触，其电连接自由层和被钉扎层。 非磁性细丝接触由非磁性源层形成，也在自由层和被钉扎层之间。 灯丝接触引导编程电流通过磁性电池结构，使得自由层中编程电流的横截面面积小于结构的横截面。 自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。

Patent Agency Ranking