公开(公告)号：US12205905B2

公开(公告)日：2025-01-21

申请号：US17179422

申请日：2021-02-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hsing Chen ,  Yu-Ming Hsu ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L23/00 ,  H01L29/20

Abstract: A semiconductor structure includes a substrate including a device region, a peripheral region surrounding the device region, and a transition region disposed between the device region and the peripheral region. An epitaxial layer is disposed on the device region, the peripheral region, and the transition region. A first portion of the epitaxial layer on the peripheral region has a poly-crystal structure.

公开(公告)号：US20240038844A1

公开(公告)日：2024-02-01

申请号：US17896096

申请日：2022-08-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Liang Kuo ,  Yen-Hsing Chen ,  Yen-Lun Chen ,  Ruei-Hong Shen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/10 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L29/1033 ,  H01L29/7786 ,  H01L29/66462

Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode on the p-type semiconductor layer, and then forming a source electrode and a drain electrode adjacent to two sides of the gate electrode. Preferably, the buffer layer further includes a bottom portion having a first carbon concentration and a top portion having a second carbon concentration, in which the second carbon concentration is less than the first carbon concentration and a thickness of the bottom portion is less than a thickness of the top portion.

公开(公告)号：US11695067B2

公开(公告)日：2023-07-04

申请号：US17949241

申请日：2022-09-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hsing Chen ,  Yu-Ming Hsu ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/00 ,  H01L29/778 ,  H01L21/768 ,  H01L21/67 ,  H01L29/66

CPC classification number: H01L29/7783 ,  H01L21/67109 ,  H01L21/76864 ,  H01L29/66462 ,  H01L29/7786

Abstract: A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.

公开(公告)号：US11616135B2

公开(公告)日：2023-03-28

申请号：US16843851

申请日：2020-04-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/16 ,  H01L29/20

Abstract: A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.

公开(公告)号：US11563088B2

公开(公告)日：2023-01-24

申请号：US16708448

申请日：2019-12-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US20220416068A1

公开(公告)日：2022-12-29

申请号：US17897237

申请日：2022-08-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/778 ,  H01L29/16 ,  H01L29/20 ,  H01L29/66

Abstract: A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.

公开(公告)号：US20220344474A1

公开(公告)日：2022-10-27

申请号：US17334837

申请日：2021-05-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Chun-Liang Kuo ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L23/00 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

Abstract: A superlattice structure includes a substrate. A first superlattice stack is disposed on the substrate. The first superlattice stack includes a first superlattice layer, a second superlattice layer and a third superlattice layer disposed from bottom to top. Three stress relaxation layers respectively disposed between the first superlattice layer and the second superlattice layer, the second superlattice layer and the third superlattice layer and on the third superlattice layer. Each of the stress relaxation layers includes a group III-V compound layer. The thickness of each of the stress relaxation layers should be greater than a relaxation critical thickness.

公开(公告)号：US20220262942A1

公开(公告)日：2022-08-18

申请号：US17735100

申请日：2022-05-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/267 ,  H01L29/15 ,  H01L29/20

Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.

公开(公告)号：US20210134957A1

公开(公告)日：2021-05-06

申请号：US16708448

申请日：2019-12-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US10546922B2

公开(公告)日：2020-01-28

申请号：US15890320

申请日：2018-02-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Kai Hsu ,  Ssu-I Fu ,  Yu-Hsiang Hung ,  Wei-Chi Cheng ,  Jyh-Shyang Jenq ,  Tsung-Mu Yang

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L23/535 ,  H01L21/768 ,  H01L23/485 ,  H01L29/08 ,  H01L29/417 ,  H01L21/285

Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a gate structure is formed on the substrate. Next, a recess is formed adjacent to two sides of the gate structure, and an epitaxial layer is formed in the recess, in which a top surface of the epitaxial layer is lower than a top surface of the substrate. Next, a cap layer is formed on the epitaxial layer, in which a top surface of the cap layer is higher than a top surface of the substrate.