公开(公告)号：US06743473B1

公开(公告)日：2004-06-01

申请号：US09505638

申请日：2000-02-16

申请人： Vijay D. Parkhe ,  Gilbert Hausmann ,  Jagadish Kalyanam

发明人： Vijay D. Parkhe ,  Gilbert Hausmann ,  Jagadish Kalyanam

IPC分类号： C23C1606

CPC分类号： H01L21/76843 ,  C23C16/18 ,  C23C16/34 ,  C23C16/45561 ,  H01L21/28568 ,  H01L21/76856 ,  H01L21/76862

摘要： The present invention provides a method and precursor for forming a metal and/or metal nitride layer on the substrate by chemical vapor deposition. The organometallic precursor has the formula of (Cp(R)n)xMHy−x, where Cp is a cyclopentadienyl functional group, R is a substituent on the cyclopentadienyl functional group comprising an organic group having at least one carbon-silicon bond, n is an integer from 0 to 5, x is an integer from 1 to 4, M is a metal, and y is the valence of the metal M. A metal, metal nitride, metal carbon nitride, or metal silicon nitride film is deposited on a heated substrate by thermal or plasma enhanced decomposition of the organometallic precursor in the presence of a processing gas, such as hydrogen, nitrogen, ammonia, silane, and combinations thereof, at a pressure of less than about 20 Torr. By controlling the reactive gas composition either metal or metal nitride films may be deposited. The deposited metal or metal nitride film may then be exposed to a plasma to remove contaminants, densify the film, and reduce film resistivity.

摘要翻译： 本发明提供了通过化学气相沉积在基板上形成金属和/或金属氮化物层的方法和前体。 有机金属前体具有式（Cp（R）n）xMHy-x，其中Cp是环戊二烯基官能团，R是包含具有至少一个碳 - 硅键的有机基团的环戊二烯基官能团上的取代基，n是 0至5的整数，x是1至4的整数，M是金属，y是金属M的化合价。金属，金属氮化物，金属氮化物或金属氮化硅膜沉积在 在低于约20托的压力下，在加工气体例如氢气，氮气，氨，硅烷及其组合的存在下，通过热或等离子体增强分解有机金属前体来加热衬底。 通过控制反应性气体组成，可以沉积金属或金属氮化物膜。 然后将沉积的金属或金属氮化物膜暴露于等离子体以除去污染物，使膜致密化并降低膜电阻率。

公开(公告)号：US5886865A

公开(公告)日：1999-03-23

申请号：US42972

申请日：1998-03-17

申请人： Vijay D. Parkhe ,  Steven Sansoni ,  Vincent E. Burkhart

发明人： Vijay D. Parkhe ,  Steven Sansoni ,  Vincent E. Burkhart

IPC分类号： H01L21/00 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/67253 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

摘要： A method and apparatus for determining the state of contamination of an electrostatic chuck. The method consists of applying a voltage to at least one of the chuck electrodes and measuring a leakage current to any of the chuck electrodes. The measured current is compared to a first threshold value. If the measured current is greater than the first threshold value, the chuck is deemed contaminated.

摘要翻译： 一种用于确定静电卡盘的污染状态的方法和装置。 该方法包括向至少一个卡盘电极施加电压，并测量到任何卡盘电极的泄漏电流。 将测量的电流与第一阈值进行比较。 如果测量的电流大于第一阈值，则卡盘被认为被污染。