公开(公告)号：US08538333B2

公开(公告)日：2013-09-17

申请号：US13327943

申请日：2011-12-16

Applicant: Anand Jain ,  John Stavropoulos ,  Alan Neuhauser ,  Vladimir Kuznetsov ,  Jack Crystal ,  Wendell Lynch

Inventor： Anand Jain ,  John Stavropoulos ,  Alan Neuhauser ,  Vladimir Kuznetsov ,  Jack Crystal ,  Wendell Lynch

IPC: H04B7/00

CPC classification number: H04L67/22 ,  H04W4/80 ,  H04W24/08 ,  H04W52/0245 ,  Y02D70/144 ,  Y02D70/164

Abstract: A computer-implemented method for establishing media data exposure for a computer processing device, where media data received in the computer processing device. The computer processing device pairs itself with a plurality of portable computing devices using a Bluetooth connection when media data is received. A signal strength characteristic of the Bluetooth connection is established in the computer processing device for each of the paired plurality of portable computing devices. Each signal strength characteristic with the received media data is then established to determine which signal strength characteristic is the strongest when the media data was received in the computer processing device.

Abstract translation: 一种用于为计算机处理设备建立媒体数据曝光的计算机实现的方法，其中在计算机处理设备中接收到媒体数据。 当接收到媒体数据时，计算机处理设备将自身与使用蓝牙连接的多个便携式计算设备配对。 对于成对的多个便携式计算设备中的每一个，在计算机处理设备中建立蓝牙连接的信号强度特性。 然后建立接收的媒体数据的每个信号强度特性，以确定当在计算机处理装置中接收到媒体数据时哪个信号强度特性最强。

公开(公告)号：US08497167B1

公开(公告)日：2013-07-30

申请号：US11654736

申请日：2007-01-17

Applicant: Vladislav Vashchenko ,  Vladimir Kuznetsov ,  Peter J. Hopper

Inventor： Vladislav Vashchenko ,  Vladimir Kuznetsov ,  Peter J. Hopper

IPC: H01L31/107 ,  H01L23/60

CPC classification number: H01L27/0255 ,  H01L29/063 ,  H01L29/861

Abstract: A high voltage ESD protection diode wherein the p-n junction is defined by a p-well and an n-well and includes a RESURF region, the diode including a field oxide layer formed on top of the p-well and n-well, wherein the parameters of the diode are adjustable by controlling one or more of the junction width, the length of the RESURF region, or the length of the field oxide layer.

Abstract translation: 一种高压ESD保护二极管，其中pn结由p阱和n阱限定并且包括RESURF区，所述二极管包括形成在p阱和n阱顶部的场氧化物层，其中， 通过控制一个或多个结宽度，RESURF区域的长度或场氧化物层的长度可以调节二极管的参数。

公开(公告)号：US20130135218A1

公开(公告)日：2013-05-30

申请号：US13307599

申请日：2011-11-30

Applicant: Anand Jain ,  John Stavropoulos ,  Alan Neuhauser ,  Wendell Lynch ,  Vladimir Kuznetsov ,  Jack Crystal

Inventor： Anand Jain ,  John Stavropoulos ,  Alan Neuhauser ,  Wendell Lynch ,  Vladimir Kuznetsov ,  Jack Crystal

IPC: G06F3/041

CPC classification number: G06F21/32 ,  G06F3/044 ,  G06F3/0488 ,  G06F21/316

Abstract: Systems and methods are disclosed for identifying users of touch screens according to a touch/gesture profile. The profile includes stored electrical characteristics of contact with the touch screen. The profile is correlated with applications opened and/or accessed, along with any associated metadata, as well as media exposure data derived from audio received at the device. The correlated information may be used to confirm identification of one or more individuals using a device for audience measurement purposes.

Abstract translation: 公开了根据触摸/手势简档识别触摸屏用户的系统和方法。 简档包括与触摸屏接触的存储的电特性。 该配置文件与打开和/或访问的应用程序以及任何相关联的元数据以及从在设备处接收的音频导出的媒体曝光数据相关。 相关信息可以用于使用用于观众测量目的的设备来确认一个或多个个人的识别。

公开(公告)号：US08002463B2

公开(公告)日：2011-08-23

申请号：US12138848

申请日：2008-06-13

Applicant: Ernst H. A. Granneman ,  Pascal Vermont ,  Vladimir Kuznetsov

Inventor： Ernst H. A. Granneman ,  Pascal Vermont ,  Vladimir Kuznetsov

IPC: G01K13/02 ,  B05C11/10 ,  H01L21/00 ,  G01R31/00

CPC classification number: G01K5/32 ,  G01K5/28

Abstract: The publication discloses a method for determining a temperature of a substrate, comprising: providing a gas channel that is confined by at least one wall having a certain wall temperature; providing a substrate in said gas channel, proximate to the at least one wall, such that a gap exists between a surface of the substrate and the at least one wall; providing a gas flow with a certain mass flow rate through said gas channel, which gas flow extends at least partially through said gap; determining a pressure drop in the gas flow along the gas channel; and deriving from said pressure drop the temperature of said substrate using a pre-determined relation between the pressure drop along the gas channel, the wall temperature and the temperature of the substrate, at said mass flow rate. Also disclosed is a device for implementing the disclosed method.

Abstract translation: 该出版物公开了一种用于确定衬底的温度的方法，包括：提供由具有一定壁温度的至少一个壁限制的气体通道; 在所述气体通道中靠近所述至少一个壁提供衬底，使得在所述衬底的表面和所述至少一个壁之间存在间隙; 提供具有通过所述气体通道的一定质量流速的气流，所述气流至少部分地延伸通过所述间隙; 确定沿气体通道的气流中的压降; 并且以所述质量流率，使用沿着气体通道的压降，基板的壁温度和温度之间的预定关系，从所述压力导出所述基板的温度。 还公开了一种用于实现所公开的方法的装置。

公开(公告)号：US07973386B1

公开(公告)日：2011-07-05

申请号：US11652982

申请日：2007-01-12

Applicant: Vladislav Vashchenko ,  Vladimir Kuznetsov ,  Peter J. Hopper

Inventor： Vladislav Vashchenko ,  Vladimir Kuznetsov ,  Peter J. Hopper

IPC: H01L29/66

CPC classification number: H01L29/866 ,  H01L27/0259 ,  H01L29/7375

Abstract: In a bipolar device an intrinsic Zener like diode is formed for controlling the triggering voltage and leakage current, the Zener-like diode being formed between the n-collector and the p-base, wherein the collector implant and base diffusion overlap at least partially.

Abstract translation: 在双极器件中，形成内部齐纳二极管，用于控制触发电压和漏电流，齐纳二极管形成在n极集电极和p基极之间，其中集电极注入和基极扩散至少部分重叠。

公开(公告)号：US07153772B2

公开(公告)日：2006-12-26

申请号：US10866643

申请日：2004-06-10

Applicant: Ernst H. A. Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius A. van der Jeugd

Inventor： Ernst H. A. Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius A. van der Jeugd

IPC: H01L21/44

CPC classification number: H01L21/28518 ,  H01L29/665

Abstract: A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

Abstract translation: 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。

公开(公告)号：US20060241236A1

公开(公告)日：2006-10-26

申请号：US11338527

申请日：2006-01-24

Applicant: Vladimir Kuznetsov ,  Olga Shenderova

Inventor： Vladimir Kuznetsov ,  Olga Shenderova

IPC: C08K3/04

CPC classification number: C09D179/08 ,  C08K3/04 ,  C08K3/041 ,  C08K3/045 ,  C08K3/046 ,  C08K2201/011 ,  C09D5/32 ,  C09D7/61 ,  C09D133/12 ,  Y10S977/734 ,  Y10S977/742 ,  Y10T428/263 ,  C09D175/04

Abstract: An electromagnetic radiation attenuating material or coating consistent with certain embodiments of the present invention uses a binding matrix with an operative quantity of electromagnetic radiation attenuating nano-particles suspended in the binding matrix, wherein, the electromagnetic radiation attenuating nano-particles comprise onion-like-carbon (OLC) particles. In other embodiments, freestanding structures, aerosols and powders or suspensions contained within an enclosure provide EM or Radar absorption, particularly in the range of about 500 MHz to about 30 THz. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.