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    Methods of forming silicide films in semiconductor devices
    2.
    发明授权
    Methods of forming silicide films in semiconductor devices 有权
    在半导体器件中形成硅化物膜的方法

    公开(公告)号：US07153772B2

    公开(公告)日：2006-12-26

    申请号：US10866643

    申请日：2004-06-10

    申请人： Ernst H. A. Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius A. van der Jeugd

    发明人： Ernst H. A. Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius A. van der Jeugd

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L29/665

    摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

    摘要翻译： 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。

    Methods of forming films in semiconductor devices with solid state reactants
    3.
    发明授权
    Methods of forming films in semiconductor devices with solid state reactants 有权
    在具有固态反应物的半导体器件中形成膜的方法

    公开(公告)号：US07691750B2

    公开(公告)日：2010-04-06

    申请号：US11595441

    申请日：2006-11-09

    申请人： Ernest H. A. Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius A. van der Jeugd

    发明人： Ernest H. A. Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius A. van der Jeugd

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L29/665

    摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

    摘要翻译： 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。

    Methods of forming films in semiconductor devices with solid state reactants
    5.
    发明申请
    Methods of forming films in semiconductor devices with solid state reactants 有权
    在具有固态反应物的半导体器件中形成膜的方法

    公开(公告)号：US20070059932A1

    公开(公告)日：2007-03-15

    申请号：US11595441

    申请日：2006-11-09

    申请人： Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius van der Jeugd

    发明人： Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius van der Jeugd

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L29/665

    摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

    摘要翻译： 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。

    Method for the heat treatment of substrates
    6.
    发明申请
    Method for the heat treatment of substrates 失效
    基板热处理方法

    公开(公告)号：US20050095873A1

    公开(公告)日：2005-05-05

    申请号：US10700298

    申请日：2003-10-31

    申请人： Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Pascal Vermont

    发明人： Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Pascal Vermont

    IPC分类号： H01L21/00 ,  H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477 ,  H01L21/683

    CPC分类号： H01L21/67109 ,  H01L21/324 ,  H01L21/6838

    摘要： A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

    摘要翻译： 衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。 通过在反应器的两个加热表面之间流动气体将基板保持悬浮。 将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到​​所需的温度。 然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。

    Compact single-propellant unitary propulsion system for a small satellite
    7.
    发明授权
    Compact single-propellant unitary propulsion system for a small satellite 失效
    用于小型卫星的紧凑型单推进单元推进系统

    公开(公告)号：US6131858A

    公开(公告)日：2000-10-17

    申请号：US121783

    申请日：1998-07-23

    申请人： Nathalie Dethienne ,  Xavier Pages

    发明人： Nathalie Dethienne ,  Xavier Pages

    IPC分类号： B64G1/26 ,  B64G1/40 ,  F02K9/90 ,  F02K9/60

    CPC分类号： B64G1/402 ,  B64G1/26 ,  B64G1/401

    摘要： A compact single-propellant unitary propulsion system for placing a satellite into an orbit and subsequently correcting the orbit so that the satellite is stabilized on three axes comprises a liquid propellant tank secured to a satellite platform and having a reinforced bottom wall with an outlet and filter element, a distribution block welded to the reinforced bottom wall, at least one filling/emptying value mounted on the distribution block, and a set of at least two thrusters mounted on the distribution block and fed directly from the distribution block without additional pipework. The set of at least two thrusters point substantially along the axis of the tank, which is aligned with the axis of the satellite. The propulsion system may be fully assembled before it is integrated with the satellite.

    摘要翻译： 一种用于将卫星放入轨道并随后校正轨道使得卫星在三轴上稳定的紧凑型单推进剂单一推进系统包括固定到卫星平台的具有加强底壁的液体推进剂罐，其具有出口和过滤器 焊接到加强底壁的分配块，安装在分配块上的至少一个填充/排空值，以及安装在分配块上的一组至少两个推进器，并直接从分配块进料而无需附加的管道。 所述至少两个推进器的组基本上沿着与卫星的轴线对准的罐的轴线指向。 推进系统在与卫星集成之前可以完全组装。

    Methods of forming silicide films in semiconductor devices
    10.
    发明申请
    Methods of forming silicide films in semiconductor devices 有权
    在半导体器件中形成硅化物膜的方法

    公开(公告)号：US20050017310A1

    公开(公告)日：2005-01-27

    申请号：US10866643

    申请日：2004-06-10

    申请人： Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius van der Jeugd

    发明人： Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Cornelius van der Jeugd

    IPC分类号： H01L21/28 ,  H01L21/24 ,  H01L21/285 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H01L29/76

    CPC分类号： H01L21/28518 ,  H01L29/665

    摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

    摘要翻译： 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。