公开(公告)号：USD318609S

公开(公告)日：1991-07-30

申请号：US326842

申请日：1989-03-21

申请人： Hisao Sato

设计人： Hisao Sato

公开(公告)号：US4501945A

公开(公告)日：1985-02-26

申请号：US502336

申请日：1983-06-08

申请人： Yoshinari Arabori ,  Hisao Sato

发明人： Yoshinari Arabori ,  Hisao Sato

IPC分类号： H05B6/74 ,  F24C7/02 ,  F24C15/16 ,  H05B6/78 ,  H05B6/80

CPC分类号： H05B6/6411

摘要： A microwave oven provided with a turntable device for generating microwave energy, a waveguide for coupling the microwave energy to a heating chamber defined by metal walls, a conical rotary support member disposed in the heating chamber for supporting the turntable on which a foodstuff to be cooked is mounted, and an electric motor for rotating the rotary support member. The conical rotary support member is provided with a plurality of arms and a peripheral edge to which the arms are connected and the arm and the peripheral edge define openings through which microwave energy reflected from the walls of the heating chamber passes. The conical rotary support member is further provided with a protruded member made of microwave reflecting material and arranged at the central portion of the rotary support member.

摘要翻译： 一种设置有用于产生微波能量的转盘装置的微波炉，用于将微波能量耦合到由金属壁限定的加热室的波导，设置在加热室中的锥形旋转支撑构件，用于支撑要在其上烹饪食物的转盘 和用于旋转旋转支撑构件的电动马达。 锥形旋转支撑构件设置有多个臂和外围边缘，臂连接到该外围边缘，并且臂和周边边缘限定了从加热室的壁反射的微波能通过的开口。 锥形旋转支撑构件还设置有由微波反射材料制成的突出构件，并且布置在旋转支撑构件的中心部分。

公开(公告)号：US09190561B2

公开(公告)日：2015-11-17

申请号：US13722042

申请日：2012-12-20

申请人： Shunsuke Teranishi ,  Hisao Sato

发明人： Shunsuke Teranishi ,  Hisao Sato

IPC分类号： H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L33/14

CPC分类号： H01L33/04 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32

摘要： A semiconductor light emitting element includes an n-type semiconductor layer containing n-type impurities, a light emitting layer stacked on the n-type semiconductor layer, and a p-type semiconductor layer stacked on the light emitting layer and containing p-type impurities. The light emitting layer includes three or more well layers, and four or more barrier layers composed of a group-III nitride semiconductor having a larger band gap than that of the well layers, and each of the three or more well layers is sandwiched from both sides by neighboring two of the barrier layers. The three or more well layers include plural n-side well layers each having a first thickness to emit light of a common wavelength, and one or plural p-side well layers each having a second thickness larger than the first thickness and having a different composition from the n-side well layers to emit light of the common wavelength.

摘要翻译： 半导体发光元件包括含有n型杂质的n型半导体层，堆叠在n型半导体层上的发光层和堆叠在发光层上并含有p型杂质的p型半导体层 。 发光层包括三个以上的阱层，以及由具有比阱层的带隙大的带隙的III-III族氮化物半导体构成的四个以上的阻挡层，并且三个以上的阱层中的每一个被夹在两个 侧面由相邻的两个屏障层。 三层以上的阱层包括各自具有发射共同波长的光的第一厚度的多个n侧阱层，以及具有大于第一厚度的第二厚度并且具有不同组成的一个或多个p侧阱层 从n侧阱层发射出共同波长的光。

公开(公告)号：US07521777B2

公开(公告)日：2009-04-21

申请号：US11392767

申请日：2006-03-30

申请人： Hisao Sato ,  Hisayuki Miki

发明人： Hisao Sato ,  Hisayuki Miki

IPC分类号： H01L21/4763

CPC分类号： H01L29/2003 ,  H01L33/06 ,  H01L33/32

摘要： The object of the present invention is to provide a gallium nitride-based compound semiconductor multilayer structure useful for manufacturing a gallium nitride-based compound semiconductor light-emitting device which requires a low operating voltage and from which a good emission output can be obtained. The present gallium nitride-based compound semiconductor multilayer structure comprises a substrate having thereon an n-type layer, a light-emitting layer and a p-type layer, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly and the light-emitting layer being provided between the n-type layer and the p-type layer, wherein the well layers consisting of the multiple quantum well structure comprise a well layer having an ununiform thickness and a well layer having a uniform thickness.

摘要翻译： 本发明的目的是提供一种氮化镓系化合物半导体多层结构，其可用于制造氮化镓系化合物半导体发光装置，该氮化镓系化合物半导体发光装置需要低的工作电压，并且能够获得良好的发光输出。 目前的氮化镓系化合物半导体多层结构体包括其上具有n型层，发光层和p型层的衬底，所述发光层具有多量子阱结构，其中阱层和 阻挡层被重复地交替层叠并且发光层设置在n型层和p型层之间，其中由多量子阱结构构成的阱层包括具有不均匀厚度的阱层和阱 层具有均匀的厚度。

公开(公告)号：US07372066B2

公开(公告)日：2008-05-13

申请号：US10516703

申请日：2003-06-04

申请人： Hisao Sato ,  Tomoya Sugahara ,  Shinji Kitazawa ,  Yoshihiko Muramoto ,  Shiro Sakai

发明人： Hisao Sato ,  Tomoya Sugahara ,  Shinji Kitazawa ,  Yoshihiko Muramoto ,  Shiro Sakai

IPC分类号： H01L29/06

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06

摘要： A light-emitting element using GaN. On a substrate (10), formed are an SiN buffer layer (12), a GaN buffer layer (14), an undoped GaN layer (16), an Si-doped n-GaN layer (18), an SLS layer (20), an undoped GaN layer (22), an MQW light-emitting layer (24), an SLS layer (26), and a p-GaN layer (28), forming a p electrode (30) and an n electrode (32). The MQW light-emitting layer (24) has a structure in which InGaN well layers and AlGaN barrier layers are alternated. The Al content ratios of the SLS layers (20, and 26) are more than 5% and less than 24%. The In content ratio of the well layer in the MQW light-emitting layer (24) is more than 3% and less than 20%. The Al content ratio of the barrier layer is more than 1% and less than 30%. By adjusting the content ratio and film thickness of each layer to a desired value, the light luminous efficiency for wavelength of less than 400 nm is improved.

摘要翻译： 使用GaN的发光元件。 在形成的衬底（10）上形成SiN缓冲层（12），GaN缓冲层（14），未掺杂的GaN层（16），Si掺杂的n-GaN层（18），SLS层（20 ），形成p型电极（30）和n电极（32）的未掺杂GaN层（22），MQW发光层（24），SLS层（26）和p-GaN层（28） 。 MQW发光层（24）具有其中InGaN阱层和AlGaN势垒层交替的结构。 SLS层（20和26）的Al含量比大于5％且小于24％。 MQW发光层（24）中的阱层的In含量比大于3％且小于20％。 阻挡层的Al含量比大于1％且小于30％。 通过将各层的含有率和膜厚度调整为所需值，波长小于400nm的光发光效率提高。

公开(公告)号：US20060175600A1

公开(公告)日：2006-08-10

申请号：US10516703

申请日：2003-06-04

申请人： Hisao Sato ,  Tomoya Sugahara ,  Shinji Kitazawa ,  Yoshihiko Muramoto ,  Shiro Sakai

发明人： Hisao Sato ,  Tomoya Sugahara ,  Shinji Kitazawa ,  Yoshihiko Muramoto ,  Shiro Sakai

IPC分类号： H01L31/109 ,  H01L21/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06

摘要： A light-emitting element using GaN. On a substrate (10), formed are an SiN buffer layer (12), a GaN buffer layer (14), an undoped GaN layer (16), an Si-doped n-GaN layer (18), an SLS layer (20), an undoped GaN layer (22), an MQW light-emitting layer (24), an SLS layer (26), and a p-GaN layer (28), forming a p electrode (30) and an n electrode (32). The MQW light-emitting layer (24) has a structure in which InGaN well layers and AlGaN barrier layers are alternated. The Al content ratios of the SLS layers (20, and 26) are more than 5% and less than 24%. The In content ratio of the well layer in the MQW light-emitting layer (24) is more than 3% and less than 20%. The Al content ratio of the barrier layer is more than 1% and less than 30%. By adjusting the content ratio and film thickness of each layer to a desired value, the light luminous efficiency for wavelength of less than 400 nm is improved.

摘要翻译： 使用GaN的发光元件。 在形成的衬底（10）上形成SiN缓冲层（12），GaN缓冲层（14），未掺杂的GaN层（16），Si掺杂的n-GaN层（18），SLS层（20 ），形成p型电极（30）和n电极（32）的未掺杂GaN层（22），MQW发光层（24），SLS层（26）和p-GaN层（28） 。 MQW发光层（24）具有其中InGaN阱层和AlGaN势垒层交替的结构。 SLS层（20和26）的Al含量比大于5％且小于24％。 MQW发光层（24）中的阱层的In含量比大于3％且小于20％。 阻挡层的Al含量比大于1％且小于30％。 通过将各层的含有率和膜厚度调整为所需值，波长小于400nm的光发光效率提高。

公开(公告)号：US06560692B1

公开(公告)日：2003-05-06

申请号：US08859490

申请日：1997-05-20

申请人： Makoto Kudo ,  Satoshi Kubota ,  Yoshiyuki Miyayama ,  Hisao Sato

发明人： Makoto Kudo ,  Satoshi Kubota ,  Yoshiyuki Miyayama ,  Hisao Sato

IPC分类号： G06F1500

CPC分类号： G06F9/3004 ,  G06F9/30101 ,  G06F9/30163 ,  G06F9/30167 ,  G06F9/324 ,  G06F9/355

摘要： The data processing circuit of this invention enables efficient description and execution of processes that act upon the stack pointer, using short instructions. It also enables efficient description of processes that save and restore the contents of registers, increasing the speed of processing of interrupts and subroutine calls and returns. A CPU that uses this data processing circuit comprises a dedicated stack pointer register SP and uses an instruction decoder to decode a group of dedicated stack pointer instructions that specify the SP as an implicit operand. This group of dedicated stack pointer instructions are implemented in hardware by using general-purpose registers, the PC, the SP, an address adder, an ALU, a PC incrementer, internal buses, internal signal lines, and external buses. This group of dedicated stack pointer instructions comprises SP-relative load instructions, stack pointer move instructions, a call instruction, a ret instruction, a sequential push instruction, and a sequential pop instruction.

摘要翻译： 本发明的数据处理电路能够使用简单的指令有效地描述和执行作用于堆栈指针的进程。 它还能够有效地描述保存和恢复寄存器内容的进程，提高处理中断和子程序调用和返回的速度。 使用该数据处理电路的CPU包括专用堆栈指针寄存器SP，并且使用指令解码器将指定SP的一组专用堆栈指针指令解码为隐式操作数。 该组专用堆栈指针指令通过使用通用寄存器，PC，SP，地址加法器，ALU，PC增量器，内部总线，内部信号线和外部总线在硬件中实现。 该组专用堆栈指针指令包括SP相对负载指令，堆栈指针移动指令，调用指令，ret指令，顺序推送指令和顺序pop指令。

公开(公告)号：US5890642A

公开(公告)日：1999-04-06

申请号：US835

申请日：1997-12-30

申请人： Hisao Sato

发明人： Hisao Sato

IPC分类号： A61B17/122 ,  A61B17/128 ,  B25B31/00 ,  A61B17/00

CPC分类号： B25B31/00 ,  A61B17/1227 ,  A61B17/128 ,  Y10T29/53783

摘要： A clip driver for driving clips each having a back portion, and abutment portions so that the frontmost clip can hold sheets of paper between the opposite ends of the abutment portions, comprising: a driver body for accommodating a plurality of the clips, the driver body including a paper insertion inlet formed at a front end for inserting the sheet-like members to be clipped, a clip insertion hole formed at a rear end for inserting the clips one by one, and a clip path formed to extend from the paper insertion inlet to the clip insertion inlet; a pair of clip opening springs disposed on the driver body near the paper insertion inlet for opening a nip between the abutment portions of the clip in the opposite directions; a slide is disposed in the driver body on the front end side so as to be movable in a front/rear direction for feeding a frontmost one of the clips in the clip path toward the paper insertion inlet over the clip opening springs by a front end of the slide; a handle one end of which is pivotally supported on the rear end side of the driver body rotatably and movably in the front/rear direction while the other end of which is disposed on the front end side of the driver body; and a connection mechanism for connecting the driver body, the slide and the handle to each other so as to move the slide in the front/rear direction in response to the rotation and movement of the handle means.

摘要翻译： 一种用于驱动夹子的夹子驱动器，每个夹具具有后部，以及抵接部分，使得最前面的夹子可以在邻接部分的相对端之间保持纸张，包括：用于容纳多个夹子的驱动器主体， 包括形成在前端的用于插入被夹持的片状构件的纸张插入口，形成在后端的夹子插入孔，用于一个接一个地插入夹子;夹持路径，其形成为从纸张插入口 到夹子插入口; 一对夹子打开弹簧，其设置在所述驱动器主体的靠近所述纸张插入口处，用于在相反方向上打开所述夹子的邻接部分之间的辊隙; 滑动件在前端侧设置在驱动器主体中，以便能够在前后方向上移动，用于将夹子路径中的夹子中的最前端的一个朝向纸张插入口穿过夹子开口弹簧前端 的幻灯片 手柄一端可旋转地支撑在驾驶员身体的后端侧，其可旋转地并可前后移动，同时另一端设置在驾驶员身体的前端侧; 以及连接机构，用于将驾驶员本体，滑动件和手柄彼此连接，以便响应于手柄装置的旋转和移动而沿前后方向移动滑动件。

公开(公告)号：US5884137A

公开(公告)日：1999-03-16

申请号：US903568

申请日：1997-07-31

申请人： Toshio Shida ,  Atsushi Ogane ,  Naoki Otomo ,  Hisao Sato ,  Kenji Kato ,  Hideki Endo

发明人： Toshio Shida ,  Atsushi Ogane ,  Naoki Otomo ,  Hisao Sato ,  Kenji Kato ,  Hideki Endo

IPC分类号： B65H15/00 ,  G03G15/23 ,  G03G15/00

CPC分类号： B65H15/00 ,  G03G15/231 ,  G03G2215/0043

摘要： A two-sided copying apparatus includes: an image forming device for forming an image on a recording sheet; a fixing device for fixing the image on the recording sheet; a branching device for branching the recording sheet on which the image was fixed by the fixing device to eject outside the apparatus or to feed again inside the apparatus for a two-sided image formation; a plurality of holding devices each for holding one edge of the recording sheet fed again inside the apparatus, wherein the holding device temporarily stops while holding the recording sheet and feeds again in a reverse direction onto a transfer station; and a supporting and guiding device for supporting and guiding the plurality of the holding devices.

摘要翻译： 双面复印装置包括：图像形成装置，用于在记录纸上形成图像; 用于将图像固定在记录纸上的定影装置; 分支装置，用于分支由定影装置固定图像的记录纸，以排出装置外部，或者在装置内再次进行双面图像形成; 多个保持装置，每个保持装置用于将记录纸的一个边缘保持在装置内部，其中保持装置在保持记录纸张的同时临时停止，并且反向再次进给到转印站; 以及用于支撑和引导多个保持装置的支撑和引导装置。

公开(公告)号：US5119553A

公开(公告)日：1992-06-09

申请号：US546442

申请日：1990-07-02

申请人： Hisao Sato

发明人： Hisao Sato

IPC分类号： B42F1/02 ,  B25B31/00 ,  B42F1/00

CPC分类号： B42F1/003 ,  B25B31/00 ,  Y10T24/205 ,  Y10T29/53783

摘要： A spring clip for binding a material, such as papers, is formed of a pair of grasping portions and a connection portion for connecting the grasping portions. Each grasping portion has a trapezoid form surrounded by front and rear edges and two side edges. Also, each grasping portion has a flat outer surface, a flat inner surface and an inclined end surface at a free end or the front edge. When the grasping portions abut against each other, the inclined end surfaces form a gap therebetween. The clip is applied to the material by a clip driver formed of a casing for receiving the clip, and a knob for pushing the clip. A pair of clip opening spring members is attached to the casing for opening the clip when applying the clip to the material.

摘要翻译： 用于粘合诸如纸张的材料的弹簧夹由一对把持部分和用于连接把持部分的连接部分形成。 每个抓握部分具有由前后边缘和两个侧边缘包围的梯形。 此外，每个抓握部分具有平坦的外表面，平坦的内表面和在自由端或前边缘处的倾斜端表面。 当夹持部彼此抵接时​​，倾斜端面在它们之间形成间隙。 通过由用于接收夹子的壳体形成的夹子驱动器将夹子施加到材料上，以及用于推动夹子的旋钮。 一对夹子打开弹簧构件附接到壳体上以在将夹子应用于材料时打开夹子。