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113 条记录 (耗时 0.035 秒)

    BIPOLAR TRANSISTOR
    31.
    发明申请
    BIPOLAR TRANSISTOR 有权
    双极晶体管

    公开(公告)号：US20110278586A1

    公开(公告)日：2011-11-17

    申请号：US13124873

    申请日：2009-10-16

    申请人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

    发明人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

    IPC分类号： H01L29/20

    CPC分类号： H01L29/7371 ,  H01L29/0649 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66318

    摘要： A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains InycAlxcGa1-xc-ycN (0•xc•1, 0•yc•1, 0

    摘要翻译： 双极晶体管设置有发射极层，基极层和集电极层。 发射极层形成在衬底之上，并且是包括第一氮化物半导体的n型导电层。 基极层形成在发射极层上，是包含第二氮化物半导体的p型导体。 集电极层形成在基极层上并且包括第三氮化物半导体。 形成集电体层，基极层和发射极层，使得到基板表面的晶体生长方向平行于[000-1]的基板方向。 第三氮化物半导体含有InycAlxcGa1-xc-ycN（0·xc·1,0,0·yc·1,0,0cc·yc·1）。 第三氮化物半导体中的表面侧的a轴长度比基板侧的a轴长短。

    SEMICONDUCTOR DEVICE
    32.
    发明申请
    SEMICONDUCTOR DEVICE 失效
    半导体器件

    公开(公告)号：US20100276732A1

    公开(公告)日：2010-11-04

    申请号：US12810096

    申请日：2008-12-25

    申请人： Yuji Ando ,  Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

    发明人： Yuji Ando ,  Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

    IPC分类号： H01L29/78

    CPC分类号： H01L29/66462 ,  H01L27/0605 ,  H01L29/0891 ,  H01L29/2003 ,  H01L29/4232 ,  H01L29/7781

    摘要： A semiconductor device includes a lower barrier layer 12 composed of a layer of AlxGa1-xN (0≦x≦1) in a state of strain relaxation, and a channel layer 13, which is composed of a layer of InyGa1-yN (0≦y≦1) disposed on the lower barrier layer 12, has band gap that is smaller than band gap of the lower barrier layer 12, and exhibits compressive strain. A gate electrode 1G is formed over the channel layer 13 via an insulating film 15 and a source electrode 1S and a drain electrode 1D serving as ohmic electrodes are formed over the channel layer 13. The insulating film 15 is constituted of polycrystalline or amorphous member.

    摘要翻译： 半导体器件包括在应变松弛的状态下由Al x Ga 1-x N（0＆amp; nlE; x＆nlE; 1）层构成的下阻挡层12，以及由In y Ga 1-y N（0＆lt; nlE; 1）层组成的沟道层13。 y）; 1）设置在下阻挡层12上，具有小于下阻挡层12的带隙的带隙，并且表现出压缩应变。 在沟道层13上经由绝缘膜15形成栅极电极1G，在沟道层13上形成有用作欧姆电极的源电极1S和漏电极1D。绝缘膜15由多晶或非晶构成。

    SEMICONDUCTOR DEVICE
    35.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140084300A1

    公开(公告)日：2014-03-27

    申请号：US14117763

    申请日：2012-05-15

    申请人： Yasuhiro Okamoto ,  Yuji Ando ,  Tatsuo Nakayama ,  Takashi Inoue ,  Kazuki Ota

    发明人： Yasuhiro Okamoto ,  Yuji Ando ,  Tatsuo Nakayama ,  Takashi Inoue ,  Kazuki Ota

    IPC分类号： H01L29/778 ,  H01L29/20

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786

    摘要： A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition In1-zAlzN (0≦z≦1), a channel layer having a composition of: AlxGa1-xN (0≦x≦1) or InyGa1-yN (0≦y≦1). Or GaN provided on and lattice-matched to the lower barrier layer, a source electrode and a drain electrode having ohmic contact to an upper part of the semiconductor layers, disposed spaced to each other, and a gate electrode arranged via a gate insulating film in a region lying between the source electrode and the drain electrode.

    摘要翻译： 场效应晶体管包括衬底和设置在衬底上的半导体层，其中半导体层包括设置在衬底上的下阻挡层，生长Ga面，晶格弛豫并具有组成In 1-z Al z N（0＆nl; z＆nl E; 1），具有以下组成的沟道层：Al x Ga 1-x N（0＆amp; nlE; x＆nlE; 1）或In y Ga 1-y N（0＆nlE; y＆nlE; 1）。 或提供在栅极绝缘膜上并与栅极绝缘膜配置的栅电极，栅极配置在栅极绝缘膜上，栅电极配置在栅极绝缘膜上， 位于源电极和漏电极之间的区域。

    Semiconductor device
    36.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08525229B2

    公开(公告)日：2013-09-03

    申请号：US12299542

    申请日：2007-05-07

    申请人： Yasuhiro Okamoto ,  Yuji Ando ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

    发明人： Yasuhiro Okamoto ,  Yuji Ando ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

    IPC分类号： H01L29/205 ,  H01L29/778

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42316

    摘要： A semiconductor device includes a channel layer, an electron-supplying layer provided on the channel layer, a cap layer provided on the electron-supplying layer and creating lattice match with the channel layer, and ohmic electrodes provided on the cap layer. The cap layer has a composition of (InyAl1-y)zGa1-zN (0≦y≦1, 0≦z≦1). The z for such cap layer monotonically decreases as being farther away from the electron-supplying layer.

    摘要翻译： 半导体器件包括沟道层，设置在沟道层上的电子供给层，设置在电子供给层上并与沟道层形成晶格匹配的盖层以及设置在盖层上的欧姆电极。 盖层具有（In y Al 1-y）z Ga 1-z N（0 @ y @ 1，0 @ z @ 1）的组成。 这种盖层的z随着远离电子供应层而单调减小。

    Ohmic electrode structure of nitride semiconductor device
    38.
    发明申请
    Ohmic electrode structure of nitride semiconductor device 失效
    氮化物半导体器件的欧姆电极结构

    公开(公告)号：US20070164305A1

    公开(公告)日：2007-07-19

    申请号：US10590730

    申请日：2005-02-28

    申请人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    发明人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/32

    摘要： An ohmic electrode structure of a nitride semiconductor device having a nitride semiconductor. The ohmic electrode structure is provided with a first metal film formed on the nitride semiconductor and a second metal film formed on the first metal film. The first metal film is composed of at least one material selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta and Zr. The second metal film is composed of at least one material different from that of the first metal film (102), selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta, Zr, Pt and Au.

    摘要翻译： 具有氮化物半导体的氮化物半导体器件的欧姆电极结构。 欧姆电极结构设置有形成在氮化物半导体上的第一金属膜和形成在第一金属膜上的第二金属膜。 第一金属膜由选自V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta和Zr中的至少一种材料构成。 第二金属膜由与V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta，Zr，Pt中的至少一种不同于第一金属膜（102）的材料构成。 和Au。