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    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    31.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20130242666A1

    公开(公告)日：2013-09-19

    申请号：US13601233

    申请日：2012-08-31

    申请人： Tatsuo IZUMI ,  Eietsu Takahashi

    发明人： Tatsuo IZUMI ,  Eietsu Takahashi

    IPC分类号： G11C16/12 ,  G11C16/08

    CPC分类号： G11C16/12 ,  G11C16/08 ,  G11C16/10 ,  G11C16/30

    摘要： A first non-selected word line including a word line adjacent to a selected word line is applied with a first write pass voltage. Furthermore, a second non-selected word line which is a non-selected word line excluding the first non-selected word line is applied with a second write pass voltage smaller than a program voltage. A control circuit, in the write operation, raises the first write pass voltage toward a first target value by executing a voltage raising operation having a first voltage rise width, X times, and raises the second write pass voltage toward a second target value by executing a voltage raising operation having a second voltage rise width, Y times. The first voltage rise width is larger than the second voltage rise width, and X times is fewer than Y times.