摘要:
An etching stopper film is formed on top of a first insulating film. The etching stopper film is a film formed by depositing at least two films, made of constituent materials identical in quality to each other, one another. Subsequently, a first opening pattern is formed in the etching stopper film. Subsequently, a second insulating film is formed on top of the etching stopper film. Subsequently, a mask pattern is formed on top of the second insulating film. Subsequently, the second insulating film is etched with the use of the mask pattern as a mask to be followed by etching of the first insulating film with the use of the etching stopper film as a mask.
摘要:
There is provided a method for correcting a photo mask, which allows the difference between a test mask and a corrected mask with respect to an error of line width depending on coarse/dense pattern to be decreased when the photo masks are corrected by optical proximity effect correction.The present method is consisted of: producing a test mask which acts as a mask for extracting process model for applying an optical proximity effect correction method (s1); transferring and measuring the dimensions of the transferred pattern using the test mask (s2 and s3); obtaining a function model (referred to as process model) of which a simulated result of the transferred pattern of a mask pattern of the photo mask using a function model matches the measured result (s4); obtaining a mask pattern of which a transferred pattern matches a designed pattern using said process model and creating mask data in accordance with the obtained mask pattern (s5); producing a corrected mask in accordance with the created mask data (s5); and setting an exposing condition where an OPE characteristic becomes flat with respect of wide and narrow pitches by adjusting at least one of a numerical aperture (NA) and a coherence factor (σ) of an exposing device when the corrected mask is transferred.
摘要:
A lens assembly for transmitting an optical signal has a light-emitting element that diffuses the optical signal and a collimator lens that converts the optical signal diffused out of the light-emitting element from its diffused light into parallel light. The device also has a condenser lens that gathers the parallel light output from the collimator lens to focus the parallel light into an opening of an optical waveguide. The opening is provided in an end of the optical waveguide. An optical axis of the condenser lens is shifted toward the other 10 end of the waveguide by a predetermined distance with respect to an optical axis of the collimator lens.
摘要:
An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1 and N2 and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2 and d2 satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2≦1.
摘要:
A lens assembly for transmitting an optical signal has a light-emitting element that diffuses the optical signal and a collimator lens that converts the optical signal diffused out of the light-emitting element from its diffused light into parallel light. The device also has a condenser lens that gathers the parallel light output from the collimator lens to focus the parallel light into an opening of an optical waveguide. The opening is provided in an end of the optical waveguide. An optical axis of the condenser lens is shifted toward the other 10 end of the waveguide by a predetermined distance with respect to an optical axis of the collimator lens.
摘要:
A solid state imaging device includes a substrate having a plurality of pixels and a plurality of on-chip lenses arranged above the substrate, each on-chip lens having a lens surface formed by subjecting a transparent photosensitive film to exposure using a mask having a gradation pattern and development so that the lens surface serves to correct shading in accordance with the gradation pattern.
摘要:
In a scanning exposure apparatus and method, a pattern formed on a mask is transferred onto a substrate by scanning the mask and the substrate synchronously with respect to pulsed light emitted from a pulsed laser light source. A number of pulses of a light beam that are to be emitted to each point on the substrate during scanning exposure is determined, and the light source is controlled according to the determined number of pulses, so that the maximum scanning speeds of the mask and the substrate and/or the maximum oscillation period of the pulsed light are maintained during the scanning exposure process. In another arrangement, during the process of exposing a shot area on the substrate, integral values of the amount of exposure energy are detected at a plurality of points in that shot area. Based on this detection result, the oscillation frequency of the pulsed light that is to be emitted to the next shot area is determined so that the next shot area is exposed at an appropriate exposure level. In another arrangement, the light source and/or the exposure light emitted from the light source are adjusted so that the output level of the light source is set to the minimum required level, and so that the target value of the integral exposure dose is reliably achieved without reducing the scanning speeds of the mask and the substrate from their maximum. In still another arrangement, during the process for exposing the substrate to the laser beam, while scanning the substrate to transfer the mask pattern, the illuminance of the light source is controlled at a constant value. In yet another arrangement, when the exposure apparatus is not performing exposure (i.e., during the non-exposure period of the operation), the illuminance of the light source is maintained at a constant level, but the exposure light is blocked by a blind so as not to reach the mask or the mask stage.
摘要:
In an exposure control method and apparatus, pulsed illumination light from an excimer laser light source is reduced by an energy rough modulator before illuminating a reticle. The reticle and a wafer are moved or scanned relative to a projection optical system to sequentially transfer a pattern image of the reticle to individual shot areas on a wafer. An integrator sensor indirectly monitors the amount of exposure on the wafer, and an energy monitor monitors the energy of pulsed illumination light inside the excimer laser light source. Based on the result of measurement by the integrator sensor and the correlation between the result of measurement by the integrator sensor and the result of measurement by the energy monitor, the emission power of the excimer laser light source is finely modulated at a high speed without employing an energy fine modulator that finely modulates the transmittance by a mechanical drive and without causing an energy loss along the optical path of illumination light.
摘要:
A projection exposure apparatus for transferring a pattern formed on a mask onto a photosensitive substrate by a scanning exposure method, includes a light source for generating a light beam having a predetermined spatial coherence, an illumination optical system for receiving the light beam from the light source and illuminating a local area on the mask with the light beam, and a device for synchronously moving the mask and the photosensitive substrate so as to transfer the pattern on the mask onto the photosensitive substrate. A direction, corresponding to a higher spatial coherence of the light beam, is made to coincide with the direction of relative scanning an illumination area and the mask in the illumination area.
摘要:
The average number N of coarse exposure pulses is obtained by dividing a proper exposure amount to a wafer by the average pulse energy. Under a condition that the average number N of coarse exposure pulses is equal to or more than the minimum number of pulses N.sub.min, the achievement accuracy R is calculated by dividing the actual accumulated exposure amount to the wafer by the proper exposure amount and the coarse exposure is performed until the achievement accuracy R reaches the coarse exposure finish judgment level Rc. Thereafter, the attenuating rate for pulse lights is set to be a predetermined value and the correcting exposure is performed by the cutoff control method until the achievement accuracy R reaches the correction exposure finish judgment level Rcc.