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公开(公告)号：US20060194125A1
公开(公告)日：2006-08-31
申请号：US11361750
申请日：2006-02-23
CPC分类号： G03F7/091 , G03F7/70341
摘要： An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1 and N2 and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2 and d2 satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2≦1.
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公开(公告)号：US07655377B2
公开(公告)日：2010-02-02
申请号：US11361750
申请日：2006-02-23
CPC分类号： G03F7/091 , G03F7/70341
摘要： An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1 and N2 and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2 and d2 satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2≦1.
摘要翻译： 一种防反射膜，其中即使在曝光光在液浸光刻技术中倾斜入射时，也可以在抗蚀剂层和硅衬底之间的界面处实现充分降低的反射率。 通过具有190〜195nm的波长和1.0以下的数值孔径的曝光系统，在抗蚀剂层和硅基板之间形成双层抗反射膜。 复数折射率N1和N2以及防反射膜的上层和下层的膜厚分别由n1-k1i，n2-k2i和d1，d2表示，并且[n10，k10，d10，...， n2，k20，d20]，n1，k1，d1，n2，k2，d2满足{（n1-n10）/（n1m-n10）} 2 + {（k1-k10）/（k1m-k10）} 2 + {（d1-d10）/（d1m-d10）} 2 + {（n2-n20）/（n2m-n20）} 2 + {（k2-k20）/（k2m-k20） d20）/（d2m-d20）} 2 <= 1。
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公开(公告)号：US07582411B2
公开(公告)日：2009-09-01
申请号：US11467983
申请日：2006-08-29
IPC分类号： H01L21/027 , G03F7/20 , G03F7/11
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/2041 , Y10S438/952
摘要： An antireflective film is provided between a resist layer and a silicon oxide layer formed on a surface of a silicon substrate, for exposure of the resist layer in an exposure system having a wavelength of 190 nm to 195 nm and a numerical aperture NA of 0.93 to 1.2. Assuming that the complex refractive indexes of upper and lower layers constituting the antireflective film are N1 (=n1−k1i) and N2 (=n2−k2i), respectively, and the thicknesses of both layers are d1 and d2, when a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2, and d2 satisfy the relational expression {(n1−n10)/(n1m−n10)}2+{(k1−k10)/(k1m−k10)}2+{(d1−d10)/(d1m−d10)}2+{(n2−n20)/(n2m−n20)}2+{(k2−k20)/(k2m−k20)}2+{(d2−d20)/(d2m−d20)}2≦1.
摘要翻译： 在抗蚀剂层和形成在硅衬底的表面上的氧化硅层之间设置防反射膜，用于在波长为190nm至195nm的曝光系统中曝光抗蚀剂层，并将数值孔径NA为0.93至 1.2。 假设构成防反射膜的上层和下层的复折射率分别为N1（= n1-k1i）和N2（= n2-k2i），并且两层的厚度分别为d1和d2， 选择[n10，k10，d10，n20，k20，d20]的值，n1，k1，d1，n2，k2和d2满足关系式<？in-line-formula description =“In-line Formulas”end =“lead”→> {（n1-n10）/（n1m-n10）} 2 + {（k1-k10）/（k1m-k10）} 2 + {（d1-d10）/（d1m-d10）} 2 + {（n2-n20）/（n2m-n20）} 2 + {（k2-k20）/（k2m-k20）} 2 + {（d2-d20）/（d2m-d20）} 2 < ？in-line-formula description =“In-line Formulas”end =“tail”？>
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公开(公告)号：US20070097514A1
公开(公告)日：2007-05-03
申请号：US11467983
申请日：2006-08-29
IPC分类号： G02B21/02
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/2041 , Y10S438/952
摘要： An antireflective film is provided between a resist layer and a silicon oxide layer formed on a surface of a silicon substrate, for exposure of the resist layer in an exposure system having a wavelength of 190 nm to 195 nm and a numerical aperture NA of 0.93 to 1.2. Assuming that the complex refractive indexes of upper and lower layers constituting the antireflective film are N1 (=n1−k1i) and N2 (=n2−k2i), respectively, and the thicknesses of both layers are d1 and d2, when a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2, and d2 satisfy the relational expression {(n1−n10)/(n1m−n10)}2+{(k1−k10)/(k1m−k10)}2+{(d1− d10)/(d1m−d10)}2+{(n2−n20)/(n2m−n20)}2+{(k2−k20)/(k2m− k20)}2+{(d2−d20)/(d2m−d20)}2≦1.
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5.发明申请公开(公告)号：US20070298615A1
公开(公告)日：2007-12-27
申请号：US11668679
申请日：2007-01-30
申请人： Nobuyuki Matsuzawa , Atsuhiro Ando , Eriko Matsui , Yuko Yamaguchi , Katsuhisa Kugimiya , Tetsuya Tatsumi , Salam Kazi , Takeshi Iwai , Makiko Irie
发明人： Nobuyuki Matsuzawa , Atsuhiro Ando , Eriko Matsui , Yuko Yamaguchi , Katsuhisa Kugimiya , Tetsuya Tatsumi , Salam Kazi , Takeshi Iwai , Makiko Irie
IPC分类号： H01L21/311
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/28123 , H01L21/32139
摘要： A pattern forming method is provided. The pattern forming method includes a first step of forming a resist pattern including a lactone group-containing skeleton above an etched layer provided on a substrate; a second step of performing plasma processing using a hydrogen-containing gas to lower a glass transition temperature or a softening point of the resist pattern; and a third step of transferring the resist pattern after the plasma processing to the etched layer by etching, and forming the pattern of the etched layer.
摘要翻译： 提供了图案形成方法。 图案形成方法包括：在设置在基板上的蚀刻层的上方形成含有含内酯基的骨架的抗蚀剂图案的第一工序; 使用含氢气体进行等离子体处理以降低玻璃化转变温度或抗蚀剂图案的软化点的第二步骤; 以及通过蚀刻将等离子体处理后的抗蚀剂图案转印到蚀刻层的第三步骤，以及形成蚀刻层的图案。
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公开(公告)号：US06881531B2
公开(公告)日：2005-04-19
申请号：US10317685
申请日：2002-12-12
申请人： Nobuyuki Matsuzawa
发明人： Nobuyuki Matsuzawa
IPC分类号： G03F7/032 , C08L101/04 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0382 , G03F7/0392 , Y10S430/106 , Y10S430/108
摘要： An exposure method comprising a step of subjecting a resist layer to selective exposure to an ultraviolet light and forming a predetermined pattern in the resist layer, wherein a polymer material having introduced thereinto a cyclohexane group is used as a polymer material constituting the resist layer wherein all hydrogen atoms bonded to four continuously adjacent carbon atoms in the cyclohexane group are substituted by fluorine atoms. The use of a polymer material having a lowered absorption in the wavelength range of a vacuum ultraviolet (VUV) light in the resist material or resist layer enables a more improved ultra-fine processing than before.
摘要翻译： 曝光方法包括以下步骤：使抗蚀剂层选择性地暴露于紫外光并在抗蚀剂层中形成预定图案，其中将引入环己烷基的聚合物材料用作构成抗蚀剂层的聚合物材料，其中全部 与环己烷基中的四个连续相邻的碳原子键合的氢原子被氟原子取代。 在抗蚀剂材料或抗蚀剂层中使用在真空紫外线（VUV）光的波长范围内具有降低的吸收的聚合物材料能够实现比以前更好的超细加工。
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公开(公告)号：US20070159572A1
公开(公告)日：2007-07-12
申请号：US10598774
申请日：2005-03-08
申请人： Eriko Matsui , Haruo Watanabe , Nobuyuki Matsuzawa , Akio Yasuda , Tadashi Mizutani , Takae Yamauchi , Susumu Kitagawa
发明人： Eriko Matsui , Haruo Watanabe , Nobuyuki Matsuzawa , Akio Yasuda , Tadashi Mizutani , Takae Yamauchi , Susumu Kitagawa
IPC分类号： G02F1/1333
摘要： The present invention is directed to an element for modulating area, in which there is used a functional molecular element adapted to change, by application of electric field, conformation of disc-shape like organic metallic complex molecule to exhibit function so that the structure of the organic metallic complex molecule is changed by application of electric field and the occupation area thereof is thus changed. The area modulating element is adapted to variously change molecular structure in accordance with control of applied electric field to change occupation area of molecule to thereby constitute a functional device such as optical filter and/or optical screen, etc.
摘要翻译： 本发明涉及一种用于调制区域的元件，其中使用适于通过施加电场来改变圆盘形状的有机金属络合物分子的构象以展现功能的功能性分子元件，以使得其结构 有机金属络合物分子通过施加电场而改变，因此其占用面积发生变化。 面积调制元件适于根据施加的电场的控制来不同地改变分子结构，以改变分子的占有面积，从而构成诸如光学滤波器和/或光学屏幕等功能器件。
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公开(公告)号：US06677108B2
公开(公告)日：2004-01-13
申请号：US09907345
申请日：2001-07-17
申请人： Nobuyuki Matsuzawa , Shigeo Irie
发明人： Nobuyuki Matsuzawa , Shigeo Irie
IPC分类号： G03C556
CPC分类号： G03F7/2039 , G03F7/2004 , Y10S430/167 , Y10S430/168
摘要： A light exposure method in which, when a resist layer is selectively exposed to one of X-rays containing soft X-rays, vacuum ultraviolet light rays and ultraviolet rays containing extreme ultraviolet light rays for patterning the resist layer to a pre-set shape, a high molecular material having pre-set oxygen content ratio (no) and density (&rgr;) is applied to form a resist layer having a film thickness not less than 250 nm. Since the high molecular material having the pre-set oxygen content ratio (no) and density (&rgr;) is used, a resist pattern of a better shape may be obtained even if the resist layer is of an increased thickness of not less than 250 nm. Since the film thickness of the resist layer is not less than 250 nm, it is possible to construct a lithographic process superior in etching resistance to realize ultra-fine machining than was heretofore possible.
摘要翻译： 一种曝光方法，其中当将抗蚀剂层选择性地暴露于含有软X射线的X射线之一，真空紫外光线和包含用于将抗蚀剂层图案化为预定形状的极紫外光的紫外线时， 施加具有预设氧含量比（No）和密度（rho））的高分子材料以形成膜厚度不小于250nm的抗蚀剂层。 由于使用具有预设氧含量比（no）和密度（rho）的高分子材料，因此即使抗蚀剂层的厚度增加到不小于250nm，也可以获得更好形状的抗蚀剂图案 。 由于抗蚀剂层的膜厚度不小于250nm，因此可以构造抗蚀性优异的平版印刷工艺，以实现超细加工。
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公开(公告)号：US07902535B2
公开(公告)日：2011-03-08
申请号：US10597845
申请日：2005-02-02
申请人： Eriko Matsui , Haruo Watanabe , Oliver Harnack , Nobuyuki Matsuzawa , Akio Yasuda , Tadashi Mizutani , Takae Yamauchi , Susumu Kitagawa
发明人： Eriko Matsui , Haruo Watanabe , Oliver Harnack , Nobuyuki Matsuzawa , Akio Yasuda , Tadashi Mizutani , Takae Yamauchi , Susumu Kitagawa
IPC分类号： H01L47/00
CPC分类号： H01L51/0595 , B82Y10/00 , G02F1/061 , G02F1/167 , G11C11/5664 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C2013/009 , G11C2213/14 , G11C2213/77 , H01L51/0076 , H01L51/0077 , H01L51/0508 , H01L51/0554 , H01L51/0591 , H01L51/428 , Y02E10/549
摘要： A functional molecular element is provided. The functional molecular element is adapted to change, by application of electric field, conformation of a disc shape like organic metallic complex molecule (1) which forms a columnar arrangement structure to exhibit function, wherein the structure of the organic metallic complex molecule is changed by application of electric field so that anisotropy of dielectric constant is changed. Accordingly, conductivity between measurement electrodes can be switched. As its stable value, there are three kinds of stable values or more. Thus, elements or devices to which such multi-value memory characteristic is applied can be constituted.
摘要翻译： 提供功能性分子元件。 功能分子元件适于通过施加电场来改变像圆形形状的有机金属络合物分子（1）的构型，其形成柱状排列结构以显示功能，其中有机金属络合物分子的结构由 施加电场使介电常数各向异性发生变化。 因此，可以切换测量电极之间的电导率。 作为其稳定值，有三种稳定值或更多。 因此，可以构成应用这种多值存储特性的元件或装置。
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公开(公告)号：US07679080B2
公开(公告)日：2010-03-16
申请号：US11571135
申请日：2005-06-23
申请人： Eriko Matsui , Nobuyuki Matsuzawa , Akio Yasuda , Oliver Harnack
发明人： Eriko Matsui , Nobuyuki Matsuzawa , Akio Yasuda , Oliver Harnack
IPC分类号： H01L51/30
CPC分类号： B82Y30/00 , B82Y10/00 , H01L27/283 , H01L51/005 , H01L51/0067 , H01L51/0512 , H01L51/0583 , H01L51/0595 , Y10S977/731 , Y10S977/791 , Y10S977/94 , Y10S977/943
摘要： A functional molecular device displaying its functions under the action of an electrical field is provided. A Louis base molecule, exhibiting positive dielectric constant anisotropy or exhibiting dipole moment along the long-axis direction of the Louis base molecule, is arrayed in the form of a pendant on an electrically conductive linear or film-shaped principal-axis molecule of a conjugated system, via a metal ion capable of acting as a Louis acid. The resulting structure is changed in conformation on application of an electrical field to exhibit its function. The electrically conductive linear or film-shaped principal-axis molecule and the Louis base molecule form a complex with the metal ion. On application of the electrical field, the Louis base molecule performs a swinging movement or a seesaw movement to switch the electrical conductivity of the principal-axis molecule. This molecule exhibits electrical characteristics which may be reversed depending on whether or not the molecule has been subjected to electrical field processing. A molecular device having a function equivalent to one of CMOS may be produced from one and the same material.
摘要翻译： 提供了在电场作用下显示其功能的功能分子装置。 在路易斯碱分子的长轴方向显示出正介电常数各向异性或显示偶极矩的路易斯碱基分子以共轭的导电线性或膜状主轴分子的侧基的形式排列 系统，通过能够作为路易斯酸的金属离子。 所产生的结构在施加电场以表现其功能的结构上改变。 导电线性或膜状主轴分子和路易斯碱分子与金属离子形成络合物。 在施加电场时，路易斯碱分子进行摆动运动或跷跷板运动以切换主轴分子的导电性。 该分子表现出电特性，其可以根据分子是否经受电场加工而反转。 具有与CMOS之一相当的功能的分子器件可以由同一材料制造。
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