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公开(公告)号：US07655377B2
公开(公告)日：2010-02-02
申请号：US11361750
申请日：2006-02-23
CPC分类号： G03F7/091 , G03F7/70341
摘要： An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1 and N2 and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2 and d2 satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2≦1.
摘要翻译： 一种防反射膜，其中即使在曝光光在液浸光刻技术中倾斜入射时，也可以在抗蚀剂层和硅衬底之间的界面处实现充分降低的反射率。 通过具有190〜195nm的波长和1.0以下的数值孔径的曝光系统，在抗蚀剂层和硅基板之间形成双层抗反射膜。 复数折射率N1和N2以及防反射膜的上层和下层的膜厚分别由n1-k1i，n2-k2i和d1，d2表示，并且[n10，k10，d10，...， n2，k20，d20]，n1，k1，d1，n2，k2，d2满足{（n1-n10）/（n1m-n10）} 2 + {（k1-k10）/（k1m-k10）} 2 + {（d1-d10）/（d1m-d10）} 2 + {（n2-n20）/（n2m-n20）} 2 + {（k2-k20）/（k2m-k20） d20）/（d2m-d20）} 2 <= 1。
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公开(公告)号：US20060194125A1
公开(公告)日：2006-08-31
申请号：US11361750
申请日：2006-02-23
CPC分类号： G03F7/091 , G03F7/70341
摘要： An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1 and N2 and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2 and d2 satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2≦1.
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公开(公告)号：US07582411B2
公开(公告)日：2009-09-01
申请号：US11467983
申请日：2006-08-29
IPC分类号： H01L21/027 , G03F7/20 , G03F7/11
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/2041 , Y10S438/952
摘要： An antireflective film is provided between a resist layer and a silicon oxide layer formed on a surface of a silicon substrate, for exposure of the resist layer in an exposure system having a wavelength of 190 nm to 195 nm and a numerical aperture NA of 0.93 to 1.2. Assuming that the complex refractive indexes of upper and lower layers constituting the antireflective film are N1 (=n1−k1i) and N2 (=n2−k2i), respectively, and the thicknesses of both layers are d1 and d2, when a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2, and d2 satisfy the relational expression {(n1−n10)/(n1m−n10)}2+{(k1−k10)/(k1m−k10)}2+{(d1−d10)/(d1m−d10)}2+{(n2−n20)/(n2m−n20)}2+{(k2−k20)/(k2m−k20)}2+{(d2−d20)/(d2m−d20)}2≦1.
摘要翻译： 在抗蚀剂层和形成在硅衬底的表面上的氧化硅层之间设置防反射膜，用于在波长为190nm至195nm的曝光系统中曝光抗蚀剂层，并将数值孔径NA为0.93至 1.2。 假设构成防反射膜的上层和下层的复折射率分别为N1（= n1-k1i）和N2（= n2-k2i），并且两层的厚度分别为d1和d2， 选择[n10，k10，d10，n20，k20，d20]的值，n1，k1，d1，n2，k2和d2满足关系式<？in-line-formula description =“In-line Formulas”end =“lead”→> {（n1-n10）/（n1m-n10）} 2 + {（k1-k10）/（k1m-k10）} 2 + {（d1-d10）/（d1m-d10）} 2 + {（n2-n20）/（n2m-n20）} 2 + {（k2-k20）/（k2m-k20）} 2 + {（d2-d20）/（d2m-d20）} 2 < ？in-line-formula description =“In-line Formulas”end =“tail”？>
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公开(公告)号：US20070097514A1
公开(公告)日：2007-05-03
申请号：US11467983
申请日：2006-08-29
IPC分类号： G02B21/02
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/2041 , Y10S438/952
摘要： An antireflective film is provided between a resist layer and a silicon oxide layer formed on a surface of a silicon substrate, for exposure of the resist layer in an exposure system having a wavelength of 190 nm to 195 nm and a numerical aperture NA of 0.93 to 1.2. Assuming that the complex refractive indexes of upper and lower layers constituting the antireflective film are N1 (=n1−k1i) and N2 (=n2−k2i), respectively, and the thicknesses of both layers are d1 and d2, when a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2, and d2 satisfy the relational expression {(n1−n10)/(n1m−n10)}2+{(k1−k10)/(k1m−k10)}2+{(d1− d10)/(d1m−d10)}2+{(n2−n20)/(n2m−n20)}2+{(k2−k20)/(k2m− k20)}2+{(d2−d20)/(d2m−d20)}2≦1.
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公开(公告)号：US09851483B2
公开(公告)日：2017-12-26
申请号：US13502907
申请日：2011-08-24
申请人： Shuzo Sato , Eiji Otani , Ken Ozawa , Seiji Kobayashi
发明人： Shuzo Sato , Eiji Otani , Ken Ozawa , Seiji Kobayashi
CPC分类号： G02B5/3058 , G03B35/08 , G03B35/26 , H04N13/218 , H04N13/257
摘要： A stereoscopic imaging method where a pixel matrix is divided into groups such that parallax information is received by one pixel group and original information is received by another pixel group. The parallax information may, specifically, be based on polarized information received by subgroups of the one pixel, group and by processing all of the information received multiple images are rendered by the method.
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6.发明授权Solid-state imaging element, solid-state imaging device, imaging apparatus, and method of manufacturing polarizing element 有权固态成像元件，固态成像器件，成像装置和制造偏振元件的方法公开(公告)号：US09064763B2
公开(公告)日：2015-06-23
申请号：US13508509
申请日：2011-08-25
申请人： Ken Ozawa , Yutaka Ooka , Eiji Otani
发明人： Ken Ozawa , Yutaka Ooka , Eiji Otani
IPC分类号： H01L27/146
CPC分类号： H01L27/14625 , H01L27/14605 , H01L27/14621 , H01L27/14627 , H01L27/14629
摘要： The present invention relates to a solid-state imaging element which is able to provide the solid-state imaging element having a polarizing element having a simple configuration and structure based on a wire grid polarizer technique, a solid-state imaging device, an imaging apparatus, and a method of manufacturing a polarizing element. The solid-state imaging device includes a plurality of solid-state imaging elements 41 each including a photoelectric conversion element 61 and a polarizing element 70 formed on the light incident side of the photoelectric conversion element 61. The solid-state imaging device includes two or more kinds of polarizing elements 70 having different polarization orientations. Each polarizing element has a stacked structure in which a stripe-shaped reflecting layer 71, an insulating layer 72 formed on the reflecting layer 71, and a light absorption layer 73 made up of a plurality of segments 73′ formed on the insulating layer 72 in a separated state are stacked in that order from the photoelectric conversion element side.
摘要翻译： 本发明涉及一种固态成像元件，其能够提供具有基于线栅偏振器技术的简单结构和结构的偏振元件的固态成像元件，固态成像器件，成像设备 ，以及偏振元件的制造方法。 固态成像装置包括多个固态成像元件41，每个固态成像元件41包括形成在光电转换元件61的光入射侧的光电转换元件61和偏振元件70.固态成像器件包括两个或 具有不同极化取向的更多种类的偏振元件70。 每个偏振元件具有层叠结构，其中条形反射层71，形成在反射层71上的绝缘层72和由绝缘层72上形成的多个部分73'构成的光吸收层73 分离状态从光电转换元件侧依次层叠。
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公开(公告)号：US20050026050A1
公开(公告)日：2005-02-03
申请号：US10898809
申请日：2004-07-26
申请人： Ken Ozawa , Kazuharu Inoue
发明人： Ken Ozawa , Kazuharu Inoue
CPC分类号： G03F1/50
摘要： An exposure mask in the form of a binary mask for intensity modulating 0th order diffracted light and a mask pattern production method using the exposure mask are disclosed on which a mask production error, an influence of flare of an exposure apparatus and a development characteristic of resist reflect on the design. The exposure mask has a block area in which a plurality of pattern sites in each of which light intercepting patterns for intercepting illumination light emitted from an exposure apparatus and light transmitting patterns for transmitting the illumination light therethrough are formed at an equal ratio and an equal pitch are disposed. The pattern sites which form the block area are disposed such that the pitches of the light intercepting patterns and the light transmitting patterns are equal while the ratio varies gradually.
摘要翻译： 公开了用于强度调制0次衍射光的二进制掩模形式的曝光掩模和使用曝光掩模的掩模图案制造方法，其中掩模产生误差，曝光装置的耀斑和抗蚀剂的显影特性的影响 反思设计。 曝光掩模具有阻挡区域，其中在曝光装置中发射的照明光的遮光图案和用于透射照明光的透光图案以相同的比例和相等的间距形成在其中的多个图案位置 被处置。 形成块区域的图案位置被布置成使得遮光图案和透光图案的间距相等，同时比例逐渐变化。
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公开(公告)号：US06721039B2
公开(公告)日：2004-04-13
申请号：US09757489
申请日：2001-01-11
申请人： Ken Ozawa
发明人： Ken Ozawa
IPC分类号： G03B2772
CPC分类号： G03F7/70058 , G03B27/72 , G03F7/70216
摘要： In an exposure method which illuminates a first object with an exposure beam and exposes a second object through a projection system with the exposure beam passing through a pattern of the first object, a correlation between a light amount of the exposure beam detected at a measuring point on an optical path to the first object and a light amount of the exposure beam on an image plane of the projection system is previously obtained, and when an integrated exposure amount with respect to the second object is controlled based on the light amount of the exposure beam detected at the measuring point and the correlation at the time of exposure of the second object, a variation amount of transmittance of the projection system is forecast in accordance with a process condition and exposure progression, and the correlation is renewed based on the forecast variation amount of the transmittance.
摘要翻译： 在以曝光光照射第一物体并通过投影系统曝光第二物体的曝光方法中，曝光光束通过第一物体的图案，在测量点处检测到的曝光光束的光量之间的相关性 预先获得与第一物体的光路上的曝光光束和投影系统的像平面上的光量的光量，并且当基于曝光量控制相对于第二物体的积分曝光量时 在测量点处检测到的光束和第二物体曝光时的相关性，根据处理条件和曝光进程来预测投影系统的透射率的变化量，并且基于预测变化更新相关性 透光率。
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公开(公告)号：US6154269A
公开(公告)日：2000-11-28
申请号：US190454
申请日：1998-11-13
申请人： Ken Ozawa
发明人： Ken Ozawa
IPC分类号： G03F7/20 , H01L21/027 , G03B27/42 , G03B27/54
CPC分类号： G03F7/70058 , G03F7/70133 , G03F7/70358
摘要： In a scan type exposure apparatus which provides relative movement between an exposure beam and an object in a predetermined direction to expose the object, performance of the apparatus is evaluated by a method that comprises detecting the exposure beam under an operation condition to be used in a scan exposure for the object, and evaluating the performance of the apparatus based on information obtained by detecting the exposure beam. The operation condition may be one that causes unevenness in the integrated exposure amount for the object to be exposed or movement speed of a movable member holding the object. The detecting may involve the detection of exposure beam pulses.
摘要翻译： 在提供曝光光束和物体之间在预定方向上相对移动以曝光物体的扫描型曝光装置中，通过一种方法来评估装置的性能，该方法包括：检测曝光光束在待使用的操作条件下 对物体进行扫描曝光，并且基于通过检测曝光光束获得的信息来评估装置的性能。 操作条件可以是导致待曝光物体的一体曝光量不均匀或保持物体的可移动部件的移动速度。 检测可能涉及检测曝光束脉冲。
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公开(公告)号：US6124064A
公开(公告)日：2000-09-26
申请号：US23202
申请日：1998-02-13
申请人： Ken Ozawa
发明人： Ken Ozawa
IPC分类号： G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F7/70558 , G03F7/70358 , G03F7/70716 , G03F7/70725
摘要： Projection for evaluation is carried out prior to actual projection according to a predetermined projection sequence without performing shot-by-shot light exposure control to measure average pulse energy p(i) through an integrator sensor every shot area. Then set pulse energy S.sub.0 /N is divided by the average pulse energy p(i), thereby calculating correction coefficients t(i) (=S.sub.0 /p(i).multidot.N)) of pulse energy for the i-th shot areas and thus producing a correction data map upon actual projection on the i-th shot area, an adjustment amount obtained by multiplying an adjustment amount before correction by the correction coefficient t(i) is used as an adjustment amount in an energy fine adjuster.
摘要翻译： 在实施投影之前，根据预定投影顺序执行评估投影，而不执行逐射光曝光控制，以通过每个拍摄区域的积分器传感器来测量平均脉冲能量p（i）。 然后设置脉冲能量S0 / N除以平均脉冲能量p（i），从而计算第i个射击区域的脉冲能量的校正系数t（i）（= S0 / p（i）xN）），因此 在第i个拍摄区域上实际投影时产生校正数据图，将在校正前的调整量乘以校正系数t（i）获得的调节量用作能量精调节器中的调整量。
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