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44 条记录 (耗时 0.021 秒)

    Electro-optic device with particular location of electrode cross-overs
    33.
    发明授权
    Electro-optic device with particular location of electrode cross-overs 失效
    具有电极交叉特定位置的电光器件

    公开(公告)号：US4457589A

    公开(公告)日：1984-07-03

    申请号：US341807

    申请日：1982-01-22

    申请人： Katsuhide Tamura ,  Yuichi Masaki

    发明人： Katsuhide Tamura ,  Yuichi Masaki

    IPC分类号： G02F1/1333 ,  G02F1/1339 ,  G02F1/1345 ,  G02F1/15 ,  G02F1/155 ,  G02F1/17 ,  G09F9/00 ,  G09F9/30 ,  G09F9/35 ,  G02F1/133

    CPC分类号： G02F1/1339 ,  G02F1/1345

    摘要： An electro-optic device comprises a seal spacer provided at the outer peripheral portion of a pair of facing electrode plates and an electro-optic substance arranged within said seal spacer, at least one of said electrode plates being provided with an electrode at outside of said seal spacer, characterized in that the other electrode plate facing the electrode plate with said electrode has a surface facing said electrode outside said seal spacer, the surface being constituted of an insulating substance.

    摘要翻译： 电光装置包括设置在一对相对电极板的外周部分处的密封间隔件和布置在所述密封间隔件内的电光物质，所述电极板中的至少一个在所述电极板的外侧设置有电极 密封垫片，其特征在于，面对具有所述电极的电极板的另一电极板具有面对所述密封垫片之外的所述电极的表面，该表面由绝缘物质构成。

    Method of manufacturing capacitive electromechanical transducer
    34.
    发明授权
    Method of manufacturing capacitive electromechanical transducer 有权
    制造电容式机电换能器的方法

    公开(公告)号：US08230576B2

    公开(公告)日：2012-07-31

    申请号：US12957784

    申请日：2010-12-01

    申请人： Yuichi Masaki

    发明人： Yuichi Masaki

    IPC分类号： H04R31/00

    CPC分类号： H04R19/005 ,  H04R31/00 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49005

    摘要： Provided is a method of manufacturing a capacitive electromechanical transducer, including: forming a lower electrode layer on a substrate; forming a sacrificial layer on the lower electrode layer; forming by application a resist layer on the sacrificial layer to form a cavity pattern; forming an insulating layer above regions including a region that contains the resist layer used to form the cavity pattern, and then removing a part of the insulating layer that is formed above the resist layer along with the resist layer, thereby leaving the insulating layer in the other regions than the region where the cavity pattern has been formed; forming a vibrating film above the region where the cavity pattern has been formed and the regions where the insulating layer remains; and removing the sacrificial layer to form a cavity.

    摘要翻译： 提供一种制造电容式机电换能器的方法，包括：在基板上形成下电极层; 在所述下电极层上形成牺牲层; 通过在牺牲层上施加抗蚀剂层以形成空腔图案; 在包括用于形成空腔图案的抗蚀剂层的区域的区域上方形成绝缘层，然后与抗蚀剂层一起除去形成在抗蚀剂层上方的绝缘层的一部分，从而将绝缘层留在 其它区域比已经形成腔图案的区域多; 在已经形成空腔图形的区域上形成振动膜，并且保留绝缘层的区域; 并去除牺牲层以形成空腔。

    METHOD FOR MANUFACTURING ELECTROMECHANICAL TRANSDUCER
    35.
    发明申请
    METHOD FOR MANUFACTURING ELECTROMECHANICAL TRANSDUCER 审中-公开
    制造电化学传感器的方法

    公开(公告)号：US20110305822A1

    公开(公告)日：2011-12-15

    申请号：US13114567

    申请日：2011-05-24

    申请人： Yoshihiro Hasegawa ,  Chienliu Chang ,  Yuichi Masaki

    发明人： Yoshihiro Hasegawa ,  Chienliu Chang ,  Yuichi Masaki

    IPC分类号： C25F3/02 ,  B05D3/10 ,  B05D5/12

    CPC分类号： C25F3/02 ,  B06B1/0292

    摘要： This invention includes energizing an electrode in which the surface facing a cavity is exposed as one electrode for electrolytic etching and the other electrode provided at the outside and contacting an electrolytic etching solution to perform electrolytic etching of a sacrificial layer to form a cavity. Thereafter, a removal agent is introduced from an etching hole to reduce residues of the sacrificial layer due to the electrolytic etching.

    摘要翻译： 本发明包括使面向空腔的表面露出的电极通电，作为电解蚀刻用的一个电极，另一个电极设置在外部，并与电解蚀刻溶液接触以进行牺牲层的电解蚀刻以形成空腔。 此后，从蚀刻孔引入去除剂，以减少由于电解蚀刻而导致的牺牲层的残留。

    Object processing apparatus and processing method
    36.
    发明授权
    Object processing apparatus and processing method 失效
    对象处理装置及处理方法

    公开(公告)号：US07524396B2

    公开(公告)日：2009-04-28

    申请号：US11053268

    申请日：2005-02-09

    申请人： Yuichi Masaki ,  Yasushi Fujisawa

    发明人： Yuichi Masaki ,  Yasushi Fujisawa

    IPC分类号： B08B3/00 ,  F25J3/00 ,  H01L21/304

    CPC分类号： H01L21/67057 ,  B08B3/048

    摘要： A processing apparatus includes a processing bath having a liquid injection port in the bottom thereof, a rectifier plate located between the bottom of the processing bath and a position at which an object to be processed is positioned, and a distribution portion extending between the rectifier plate and the liquid injection port and over the liquid injection port. The distribution portion includes an opposing portion opposing the liquid injection port, a surrounding portion surrounding a space between the opposing portion and the liquid injection port, and a guard portion or extended portion extending outwardly from the bottom end of the surrounding portion.

    摘要翻译： 处理装置包括在其底部具有液体注入口的处理槽，位于处理槽的底部和待处理物体的位置之间的整流板，以及在整流板之间延伸的分配部 液体注入口和液体注入口上方。 分配部分包括与液体注入口相对的相对部分，围绕相对部分和液体注入口之间的空间的环绕部分以及从周围部分的底端向外延伸的防护部分或延伸部分。

    Evaluation apparatus and evaluation method
    37.
    发明授权
    Evaluation apparatus and evaluation method 失效
    评价装置及评价方法

    公开(公告)号：US07468792B2

    公开(公告)日：2008-12-23

    申请号：US11959810

    申请日：2007-12-19

    申请人： Yuichi Masaki ,  Yutaka Akino

    发明人： Yuichi Masaki ,  Yutaka Akino

    IPC分类号： G01J4/00 ,  G01B9/02

    CPC分类号： G01N21/31 ,  G01J3/2823 ,  G01N21/55

    摘要： An evaluation apparatus which evaluates a sample. The apparatus includes a light source which irradiates the sample with light, an imaging spectrometer which spectroscopically measures light reflected by the sample and senses an image, a first calculator which obtains amplitude information on an amplitude of a spectral reflectance of the sample based on the image sensed by the imaging spectrometer within a predetermined wavelength range of spectral reflectance spectra obtained by the spectrometer, a memory which holds in advance relationship information representing a relationship between the amplitude information of the spectral reflectance and an absorption coefficient, and a second calculator which obtains an absorption coefficient of the sample based on the amplitude information obtained by the first calculator and the relationship information held in the memory.

    摘要翻译： 评价试样的评价装置。 该装置包括用光照射样品的光源，光谱测量由样品反射的光并感测图像的成像光谱仪，基于图像获取样品的光谱反射率的振幅信息的第一计算器 由成像光谱仪在由光谱仪获得的光谱反射光谱的预定波长范围内感测到的存储器，该存储器保持表示光谱反射率的振幅信息与吸收系数之间的关系的预先关系信息，以及第二计算器， 基于由第一计算器获得的振幅信息和保存在存储器中的关系信息的样本的吸收系数。

    Semiconductor supercapacitor system, method for making same and articles produced therefrom
    39.
    发明授权
    Semiconductor supercapacitor system, method for making same and articles produced therefrom 失效
    半导体超级电容器系统，其制造方法和由其制造的制品

    公开(公告)号：US06180252B2

    公开(公告)日：2001-01-30

    申请号：US08911716

    申请日：1997-08-15

    申请人： Mark Farrell ,  Harry Eugen Ruda ,  Yuichi Masaki

    发明人： Mark Farrell ,  Harry Eugen Ruda ,  Yuichi Masaki

    IPC分类号： B32B1700

    CPC分类号： C23C18/1216 ,  C23C18/08 ,  C23C18/1275 ,  H01G4/1227

    摘要： The invention relates to a nanostructured BaTiO3 film, plate or array that has from 1,000 to 10,000 times the storage capacity of conventional capacitors. The barium titanates are of the formula BaaTibOc wherein a and b are independently between 0.75 and 1.25 and c is 2.5 to about 5.0. The barium titanates may further be doped with a material, “M”, selected from Au, is Au, Cu, Ni3Al, Ru or InSn. The resulting titanate may be represented by the formula MdBaaTibOc wherein d is about 0.01 to 0.25, a is about 0.75 to about 1.25, b is about 0.75 to about 1.25 and c is about 2.5 to about 5.0. X-ray diffraction results illustrate that the crystal structure of the thin films changed from predominantly cubic to tetragonal phase and crystallite size increased with increasing concentration of “M”.

    摘要翻译： 本发明涉及一种纳米结构的BaTiO3膜，板或阵列，其具有常规电容器的存储容量的1,000至10,000倍。 钛酸钡具有式BaaTibOc，其中a和b独立地在0.75和1.25之间，c是2.5至约5.0。 钛酸钡还可以掺杂有选自Au的“M”，为Au，Cu，Ni3Al，Ru或InSn。 所得钛酸酯可以由式MdBaaTibOc表示，其中d为约0.01至0.25，a为约0.75至约1.25，b为约0.75至约1.25，c为约2.5至约5.0。 X射线衍射结果表明，薄膜的晶体结构从主要立方向变为四方晶相，微晶尺寸随“M”浓度的增加而增加。