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    Infrared Contrasting Color Temperature Measurement System
    32.
    发明申请
    Infrared Contrasting Color Temperature Measurement System 审中-公开
    红外对比色温测量系统

    公开(公告)号：US20150010038A1

    公开(公告)日：2015-01-08

    申请号：US14190739

    申请日：2014-02-26

    Applicant: Exergen Corporation

    Inventor： Jason N. Jarboe

    IPC: G01K7/00

    CPC classification number: G01K7/003 ,  G01J5/0003 ,  G01J5/061 ,  G01J2005/0051 ,  G01J2005/0074

    Abstract: Devices and corresponding methods can be provided to measure temperature and/or emissivity of a target. Emissivity of the target need not be known or assumed, and any temperature difference between a sensor and the target need not be zeroed or minimized. No particular bandpass filter is required. Devices can include one or two sensors viewing the same target as the target views different respective viewed temperatures. The respective viewed temperatures can be sensor temperatures, and a single sensor can be set to each of the respective viewed temperatures at different times. An analyzer can determine the temperature and/or emissivity of the target based on the respective viewed temperatures and on plural net heat fluxes detected by the sensors and corresponding to the respective viewed temperatures.

    Abstract translation: 可以提供装置和相应的方法来测量目标的温度和/或发射率。 不需要知道或假设目标的发射率，传感器和目标之间的任何温度差不需要归零或最小化。 不需要特殊的带通滤波器。 设备可以包括观察与目标相同的目标的一个或两个传感器观看不同的相应观察温度。 相应的观察温度可以是传感器温度，并且可以在不同时间将单个传感器设置到各个相应的观察温度。 分析仪可以基于相应的观察温度和由传感器检测并对应于各个观察温度的多个净热通量来确定目标的温度和/或发射率。

    TEMPERATURE MEASUREMENT DEVICE
    33.
    发明申请
    TEMPERATURE MEASUREMENT DEVICE 有权
    温度测量装置

    公开(公告)号：US20140219312A1

    公开(公告)日：2014-08-07

    申请号：US14169651

    申请日：2014-01-31

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Toshiyuki UCHII ,  Tadashi Mori

    IPC: G01J5/00

    CPC classification number: G01J5/0014 ,  G01J5/06 ,  G01J5/0821 ,  G01J5/0896 ,  G01J5/602 ,  G01J2005/0051 ,  G01J2005/0074 ,  G01K11/12

    Abstract: In an embodiment, a temperature measurement device is provided with: light collection means; extraction means; optical intensity calculation means; and temperature measurement means. The light collection means collects the emission spectrum of a measurement subject. The extraction means extracts beams having the wavelength of the atomic spectral lines and a beam having a wavelength in a wavelength region where there are no atomic spectral lines, from the emission spectrum collected by the aforementioned light collection means. The optical intensity calculation means calculates the optical intensities of the beams extracted by the aforementioned extraction means. The temperature measurement means calculates the temperature of the aforementioned measurement subject, based on the intensities of the beams calculated by the aforementioned optical intensity calculation means.

    Abstract translation: 在一个实施例中，温度测量装置具有：光收集装置; 提取手段; 光强计算手段; 和温度测量装置。 光采集装置收集测量对象的发射光谱。 提取装置从由上述光收集装置收集的发射光谱中提取具有原子谱线波长的波束和不存在原子谱线的波长区域中的波长的波束。 光强度计算装置计算由上述提取装置提取的光束的光强度。 温度测量装置基于由上述光强度计算装置计算的光束的强度来计算上述测量对象的温度。

    Method of measuring in situ differential emissivity and temperature
    35.
    发明授权
    Method of measuring in situ differential emissivity and temperature 有权
    测量原位差分发射率和温度的方法

    公开(公告)号：US08192077B2

    公开(公告)日：2012-06-05

    申请号：US12574096

    申请日：2009-10-06

    Applicant: Michael Twerdochlib

    Inventor： Michael Twerdochlib

    IPC: G01J5/02

    CPC classification number: G01J5/0003 ,  G01J5/524 ,  G01J5/602 ,  G01J2005/0074

    Abstract: A method for measuring the differential emissivity between two sites on the surface of a body and the temperature of the two sites. The method includes a plurality of measurements of the infrared radiation arising from each of the two sites under a number of different conditions. Some of the measurements include irradiation by external infrared radiation at a known wavelength and intensity. The infrared radiation arising from each of the sites may include emitted radiation, reflected ambient radiation, and reflected external radiation. Additionally, the temperature determined using the method described can be used to calibrate infrared imaging devices used to inspect the entire body.

    Abstract translation: 一种用于测量身体表面两个位置与两个部位的温度之间的差异发射率的方法。 该方法包括在多个不同条件下从两个位置中的每一个产生的红外辐射的多个测量。 一些测量包括以已知波长和强度的外部红外辐射照射。 从每个地点产生的红外辐射可能包括发射的辐射，反射的环境辐射和反射的外部辐射。 另外，使用所述方法确定的温度可用于校准用于检查整个身体的红外成像装置。

    METHOD OF MEASURING IN SITU DIFFERENTIAL EMISSIVITY AND TEMPERATURE
    36.
    发明申请
    METHOD OF MEASURING IN SITU DIFFERENTIAL EMISSIVITY AND TEMPERATURE 有权
    测量差异发生和温度的方法

    公开(公告)号：US20100014555A1

    公开(公告)日：2010-01-21

    申请号：US12574096

    申请日：2009-10-06

    Applicant: Michael Twerdochlib

    Inventor： Michael Twerdochlib

    IPC: G01J5/00

    CPC classification number: G01J5/0003 ,  G01J5/524 ,  G01J5/602 ,  G01J2005/0074

    Abstract: A method for measuring the differential emissivity between two sites on the surface of a body and the temperature of the two sites. The method includes a plurality of measurements of the infrared radiation arising from each of the two sites under a number of different conditions. Some of the measurements include irradiation by external infrared radiation at a known wavelength and intensity. The infrared radiation arising from each of the sites may include emitted radiation, reflected ambient radiation, and reflected external radiation. Additionally, the temperature determined using the method described can be used to calibrate infrared imaging devices used to inspect the entire body.

    Abstract translation: 一种用于测量身体表面两个位置与两个部位的温度之间的差异发射率的方法。 该方法包括在多个不同条件下从两个位置中的每一个产生的红外辐射的多个测量。 一些测量包括以已知波长和强度的外部红外辐射照射。 从每个地点产生的红外辐射可能包括发射的辐射，反射的环境辐射和反射的外部辐射。 另外，使用所述方法确定的温度可用于校准用于检查整个身体的红外成像装置。

    Fire hazard prevention system
    37.
    发明申请
    Fire hazard prevention system 审中-公开
    火灾危害预防系统

    公开(公告)号：US20040239511A1

    公开(公告)日：2004-12-02

    申请号：US10492511

    申请日：2004-07-19

    Inventor： Bezalel Urban ,  David Weisman

    IPC: G08B017/00

    CPC classification number: G08B17/06 ,  G01J3/52 ,  G01J5/0003 ,  G01J5/0066 ,  G01J5/08 ,  G01J5/0896 ,  G01J2005/0048 ,  G01J2005/0051 ,  G01J2005/0074 ,  G01J2005/0081 ,  G08B17/00

    Abstract: This invention provides a new safety device for monitoring the cooking process of conventional range-top by adding a temperature measurement unit and algorithm to detect abnormal cooking scenarios. The safety device includes an active radiation signal generator, which emits radiation at a known frequency. The system differentiates between the passive signal and reflected signal of the total emitted radiation signal in order to calculate the accurate emissivity value of the target object The safety device is programmed to identify different heating scenarios by comparing the actual temperature/time curve of target object to temperature/time curves of known cooking scenarios. When a hazardous situation is identified, actions are taken to prevent fire.

    Method and arrangement for determining the layer-thickness and the substrate temperature during coating
    38.
    发明授权
    Method and arrangement for determining the layer-thickness and the substrate temperature during coating 失效
    用于确定涂层期间层厚度和基材温度的方法和装置

    公开(公告)号：US5564830A

    公开(公告)日：1996-10-15

    申请号：US183176

    申请日：1994-01-18

    Applicant: Friedrich Bobel ,  Norbert Bauer

    Inventor： Friedrich Bobel ,  Norbert Bauer

    IPC: G01B11/06 ,  G01J5/00 ,  G01J5/62

    CPC classification number: G01J5/0003 ,  G01B11/0633 ,  G01J5/0007 ,  G01J2001/4242 ,  G01J2005/0048 ,  G01J2005/0074 ,  G01J5/0834

    Abstract: The invention describes a procedure and an arrangement for measurement of temperature and thickness of layer during a deposition or coating process. As coating or depositing processes known technologies of semi-conductor manufacturing arrangements, plasma devices, ion devices, and other dry-etching arrangements may be used. The invention can also be applied to the manufacture of optical coatings. As a consequence of interference of the thermal radiation of the substrate at the growing layer, the emissivity .epsilon. changes continuously during coating or depositing, therefore, a pyrometric measurement of temperature may not be applied. This basic problem is solved by the invention, which uses a reflectometer, which determines the reflectivity R of the wafer. According to the law of conservation of energy .epsilon.=1-R so that with said reflectometer the actual emissivity of the whole (multi-layer) system may be determined. The measurement of temperature then is effected by means of a determination equation. Concurrently the thickness is determined by a comparison of the reflectometer-curve and a theoretical dependency of thickness of layer.

    Abstract translation: 本发明描述了在沉积或涂覆过程期间测量层的温度和厚度的过程和布置。 作为涂覆或沉积工艺，已知有半导体制造布置的技术，可以使用等离子体装置，离子装置和其它干蚀刻装置。 本发明也可以应用于光学涂层的制造。 由于衬底在生长层处的热辐射的干扰，发射率ε在涂覆或沉积期间连续变化，因此，可能不会进行温度测量。 本发明解决了这个基本问题，本发明使用了确定晶片的反射率R的反射计。 根据能量守恒定律ε= 1-R，因此与所述反射计相比，可以确定整个（多层）系统的实际发射率。 然后通过测定方程来测量温度。 同时，通过比较反射计曲线和层厚度的理论依赖性来确定厚度。

    Method and apparatus for measuring temperature based on infrared light
    39.
    发明授权
    Method and apparatus for measuring temperature based on infrared light 失效
    用于测量基于红外光的温度的方法和装置

    公开(公告)号：US5165791A

    公开(公告)日：1992-11-24

    申请号：US759552

    申请日：1991-09-13

    Applicant: Atsushi Miki ,  Masanori Nishiguchi

    Inventor： Atsushi Miki ,  Masanori Nishiguchi

    IPC: G01J5/00

    CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J2005/0048 ,  G01J2005/0074 ,  G01J2005/0077

    Abstract: A method of using infrared light for measuring the temperature of a semiconductor element with a surface layer formed by two kinds of materials that have different emissivities and optical reflectances is disclosed. The method includes the step of taking an image with diffused light reflected from the surface of a semiconductor element by an image taking device. The method further includes determining the area ratio with which each of the two kinds of materials occupy the surface of the semiconductor element by comparing the average brightness value of the image by the image taking device with the brightness value of an image wherein each of the materials independently forms the surface layer of the above semiconductor element, obtaining a weighted average of the emissivities of the materials with the area ratio at which each of the materials occupies on the surface of the semiconductor element, and calculating the temperature of the semiconductor element based on the weighted average and the actual amount of infrared emission.

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