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公开(公告)号：US12273127B2
公开(公告)日：2025-04-08
申请号：US18218294
申请日：2023-07-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaehun Jang , Mankeun Seo , Hongrak Son , Bohwan Jun
Abstract: An Error correction code (ECC) decoder including an input manager configured to sequentially receive a first read data including a plurality of data units read from a plurality of sectors in a memory cell array of a nonvolatile memory device, by unit of sector, a pre-decoder configured to sequentially receive the first read data and generate a respective syndrome of each of the data units, and a main decoder configured to sequentially perform a first ECC decoding on the first read data based on the respective syndrome. The input manager includes a defective sector buffer to store a data unit having a minimum expected error count from among data units on which a first ECC decoding is failed. The main decoder performs a second ECC decoding on a defective data unit stored in the defective sector buffer and receives a second read data from a selected sector corresponding to the defective data unit.
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公开(公告)号：US12272863B2
公开(公告)日：2025-04-08
申请号：US18109006
申请日：2023-02-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yonghee An , Pilwon Seo , Bitna Kim , Haewon Sung , Yongwon Cho , Junhee Han , Jeongseob Kim , Hyunsuk Choi
Abstract: An electronic device includes a housing, an antenna structure disposed in an inner space of the housing, a wireless communication circuit disposed in the inner space, and a first bracket. The antenna structure includes a substrate having a first substrate surface facing in a first direction and a second substrate surface facing in a second direction opposite to the first substrate surface, and a plurality of chip antennas sequentially arranged on the first substrate surface in a third direction perpendicular to the first direction. Each of the plurality of chip antennas includes an antenna element and is separated in the third direction from remaining chip antennas by separation spaces. The first bracket includes first and second protrusions that protrude in the second direction to correspond to the first substrate surface of the substrate. The protrusions are aligned, in the third direction, with the separation spaces.
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公开(公告)号：US12272851B2
公开(公告)日：2025-04-08
申请号：US17825525
申请日：2022-05-26
Applicant: Samsung Electronics Co., Ltd.
Abstract: A rotary-type data transmission device is provided. The rotary-type data transmission includes a first structure having a first surface and a second surface facing each other and including a first metal hollow waveguide including a first through hole passing through the second surface from the first surface in a center portion thereof, a second structure coupled to the first structure to support rotation of the first structure or to support rotation by the first structure, a first transceiver facing the first surface at a certain distance therebetween, coupled to the first structure, and including a first printed circuit board, a first meta waveguide, and a first transceiver, and a second transceiver facing the second surface at a certain distance therebetween, coupled to the second structure, and including a second printed circuit board, a second meta waveguide, and a second transceiver.
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公开(公告)号：US12272775B2
公开(公告)日：2025-04-08
申请号：US17466791
申请日：2021-09-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyochul Kim , Yeonsang Park
Abstract: A polarized light emitting device and a polarization analysis apparatus including the same are disclosed. The polarized light emitting device includes a first reflective layer and a second reflective layer disposed to face each other in a first direction, a gain medium layer between the first reflective layer and the second reflective layer, and a linear polarizer layer, wherein the linear polarizer layer includes a plurality of first grating elements alternately arranged with a plurality of second grating elements along a second direction perpendicular to the first direction, wherein each of the first grating elements includes a first dielectric material having a first refractive index, and wherein each of the second grating elements includes a second dielectric material having a second refractive index different from the first refractive index.
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公开(公告)号：US12272709B2
公开(公告)日：2025-04-08
申请号：US17655576
申请日：2022-03-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Minho Jang , Jeongsoon Kang , Donghyun Kim , Seungkuk Kang , Insung Joe
IPC: H01L27/146
Abstract: An image sensor includes a first structure, a second structure, and a third structure that are sequentially stacked in a vertical direction. The first structure includes a first substrate and at least one first transistor disposed on the first substrate. The second structure includes a second substrate and at least one second transistor disposed on the second substrate. The third structure includes a third substrate that includes an upper surface on which light is incident and a lower surface that is opposite to the upper surface, a photoelectric conversion region disposed in the third substrate, a transfer gate disposed on the lower surface of the third substrate, and a reflective structure disposed on the lower surface of the third substrate and on a lower surface and side surface of the transfer gate.
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Patent Agency Ranking
公开(公告)号：US12272705B2
公开(公告)日：2025-04-08
申请号：US17239291
申请日：2021-04-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kook Tae Kim , Chang Kyu Lee , Dongmo Im , Ju-eun Kim , Miseon Park , Jungim Choe , Soojin Hong
IPC: H01L31/062 , H10F39/00
Abstract: An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench; and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.
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公开(公告)号：US12272702B2
公开(公告)日：2025-04-08
申请号：US17546401
申请日：2021-12-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yujung Choi , Junho Seok , Munhwan Kim , Wonchul Choi
IPC: H01L27/146 , H01L27/148
Abstract: An image sensor including first and second pixel groups, each of which includes first to ninth pixels arranged to form a 3×3 array is disclosed. The image sensor further includes first to ninth transfer transistors disposed in each of the pixel groups to correspond to the first to ninth pixels, respectively, each of the first to ninth transfer transistors including a transfer gate and a floating diffusion region, a selection transistor disposed in at least one of the fourth to sixth pixels in each of the pixel group, and source follower transistors respectively disposed in at least two pixels of the first to third and seventh to ninth pixels in each of the pixel groups. Source follower gates of the source follower transistors may be connected to the floating diffusion region of each of the first to ninth transfer transistors.
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公开(公告)号：US12272694B2
公开(公告)日：2025-04-08
申请号：US17680907
申请日：2022-02-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dae Seong Lee , Ah Reum Kim , Min Su Kim
IPC: H01L27/118
Abstract: A semiconductor device includes first, second, and third power rails extending in a first direction on a substrate and sequentially spaced apart in a second direction intersecting the first direction. A fourth power rail extends in the first direction on the substrate between the first and third power rails. A first well of a first conductive type is displaced inside the substrate between the first and third power rails. Cells are continuously displaced between the first and third power rails and share the first well. The first and third power rails are provided with a first voltage, the second power rail is provided with a second voltage different from the first voltage, the fourth power rail is provided with a third voltage different from the first voltage and the second voltage, and the cells are provided with the third voltage from the fourth power rail.
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公开(公告)号：US12272606B2
公开(公告)日：2025-04-08
申请号：US18300983
申请日：2023-04-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangmin Yoo , Juyoun Kim , Hyungjoo Na , Bongseok Suh , Jooho Jung , Euichul Hwang , Sungmoon Lee
IPC: H01L21/8238 , H01L21/762 , H01L27/118
Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.
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公开(公告)号：US12272535B2
公开(公告)日：2025-04-08
申请号：US17673903
申请日：2022-02-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Se Jin Oh , Doo Young Gwak , Tae Hyun Kim , Sang Ki Nam , Jae Ho Jang , Jin Kyou Choi
IPC: H01J37/32 , H01L21/3065
Abstract: A spectroscopic analysis method having improved accuracy and correlation, a method for fabricating a semiconductor device using the same, and a substrate process system using the same are provided. The spectroscopic analysis method includes receiving plasma light emitted from plasma to generate an emission spectrum, detecting n (here, n is a natural number of 2 or more) peak wavelengths from the emission spectrum, generating a plurality of correlation factor time series from correlation factors between the peak wavelengths, filtering the plurality of correlation factor time series, and analyzing the plasma, using the filtered correlation factor time series.
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