公开(公告)号：US11100299B2

公开(公告)日：2021-08-24

申请号：US16855458

申请日：2020-04-22

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Nicolas Cordier ,  Anthony Tornambe

IPC: G06K7/10

Abstract: An operation of calibrating the object using a reference reader is performed, the calibration operation including an operation of placing the reference reader at various distances away from the object that correspond to various values of a parameter within the object that is representative of the intensity of the signal received by the object, and, for each distance, an operation of determining an internal phase-shift compensation in the object with respect to a nominal internal phase shift, making it possible to obtain a load modulation amplitude that is higher, in terms of absolute value, than a threshold, and an operation of storing a lookup table of the various values of the parameter and the corresponding internal phase-shift compensations.

公开(公告)号：US20210247212A1

公开(公告)日：2021-08-12

申请号：US17171726

申请日：2021-02-09

Applicant: STMicroelectronics SA ,  STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Rousset) SAS

Inventor： Laurent Beyly ,  Olivier Richard ,  Kenichi Oku

IPC: G01D5/24 ,  H03K17/96

Abstract: An embodiment of the present disclosure relates to a method of detection of a touch contact by a sensor including a first step of comparison of a voltage with a first voltage threshold; and a second step of comparison of the voltage with a second voltage threshold, the second step being implemented if the first voltage threshold has been reached within a duration shorter than a first duration threshold, the second voltage threshold being higher than the first voltage threshold.

公开(公告)号：US11088726B2

公开(公告)日：2021-08-10

申请号：US16879314

申请日：2020-05-20

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Alexandre Tramoni

IPC: H04B5/00

Abstract: The present disclosure relates to a detection method or device, by a first NFC device generating an electromagnetic field for recharging a battery of a second NFC device, of a disruptive condition, in which thresholds (MHTH, MLTH, PHTH, PLTH) for detection of a variation of the field are adjusted in real time during the recharging.

公开(公告)号：US11088536B2

公开(公告)日：2021-08-10

申请号：US16690644

申请日：2019-11-21

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Nicolas Demange

IPC: H02H9/00 ,  H02H7/00 ,  H02H7/125 ,  G06K19/07 ,  G06K19/077 ,  H02H9/04 ,  H01L27/02 ,  H02H7/20

Abstract: An integrated circuit includes a voltage regulating circuit in the form of only one transistor, or a group of several transistors in parallel, that are connected between first and second terminals configured to be coupled to an antenna. A control circuit operates to make the voltage regulating circuit inactive when a pulse generated by an electrostatic discharge event appears at one of the first and second terminals, regardless of the direction of flow of the pulse between the first and second terminals. An electrostatic discharge circuit is further provided to address the electrostatic discharge event.

公开(公告)号：US20210242679A1

公开(公告)日：2021-08-05

申请号：US17165557

申请日：2021-02-02

Applicant: STMicroelectronics (Rousset) SAS

Inventor： François Tailliet

IPC: H02H9/04

Abstract: The present disclosure relates to a device including a rectifying bridge including: a branch connected between first and second nodes; another branch including first and second MOS transistors series-connected between the first and second nodes and having their sources coupled together; a resistor connecting the gate of the first transistor to the second node; another resistor connecting the gate of the second transistor and the first node; and for each transistor, a circuit including first and second terminals respectively connected to the drain and to the gate of the transistor, and being configured to electrically couple its first and second terminals when a voltage between the first terminal of the circuit and the first terminal of the other circuit is greater than a threshold of the circuit.

公开(公告)号：US20210225853A1

公开(公告)日：2021-07-22

申请号：US17220286

申请日：2021-04-01

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Quentin Hubert ,  Abderrezak Marzaki ,  Julien Delalleau

IPC: H01L27/1157 ,  G11C5/06 ,  H01L27/11565

Abstract: In one embodiment, a non-volatile memory device includes a vertical state transistor disposed in a semiconductor substrate, where the vertical state transistor is configured to trap charges in a dielectric interface between a semiconductor well and a control gate. A vertical selection transistor is disposed in the semiconductor substrate. The vertical selection transistor is disposed under the state transistor, and configured to select the state transistor.

公开(公告)号：US11069628B2

公开(公告)日：2021-07-20

申请号：US16292958

申请日：2019-03-05

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Abderrezak Marzaki ,  Mathieu Lisart

IPC: H01L23/02 ,  H01L23/00 ,  G06F21/87 ,  H04N19/44 ,  H01L27/02 ,  G06F21/75

Abstract: An integrated circuit includes a first domain supplied with power at a first supply voltage. A first transistor comprising in the first domain includes a first gate region and a first gate dielectric region. A second domain is supply with power at a second supply voltage and includes a second transistor having a second gate region and a second gate dielectric region, the second gate region being biased at a voltage that is higher than the first supply voltage. The first and second gate dielectric regions have the same composition, wherein that composition configures the first transistor in a permanently turned off condition in response to a gate bias voltage lower than or equal to the first supply voltage. The second transistor is a floating gate memory cell transistor, with the second gate dielectric region located between the floating and control gates.

公开(公告)号：US20210217711A1

公开(公告)日：2021-07-15

申请号：US17217005

申请日：2021-03-30

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal FORNARA

IPC: H01L23/62 ,  H01H85/02 ,  H01L23/525 ,  H01L21/66

Abstract: A semiconductor wafer includes first zones containing integrated circuits, each first zone including a substrate and a sealing ring at a periphery of the substrate. The first zones are separated from each other by second zones defining cutting lines or paths. The integrated circuit includes an electrically conductive fuse that extends between a first location inside the integrated circuit and a second location situated outside the integrated circuit beyond one of the cutting lines. This electrically conductive fuse includes a portion that passes through the sealing ring and another portion that straddles the adjacent cutting line. The portion of the fuse that passes through is electrically isolated from the sealing ring and from the substrate. The straddling portion is configured to be sliced, when cutting the wafer along the cutting line, so as to cause the fuse to change from an electrical on state to an electrical off state.

公开(公告)号：US20210211120A1

公开(公告)日：2021-07-08

申请号：US17128890

申请日：2020-12-21

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Bruno Gailhard

IPC: H03K3/03 ,  H03K5/01

Abstract: Integrated circuit, comprising at least one ring oscillator including a succession of inverters looped back to form the ring, the at least one oscillator being intended to operate at a desired output frequency and configured so that the inverter transistors operate in or near their temperature inversion zone.

公开(公告)号：US20210200542A1

公开(公告)日：2021-07-01

申请号：US17133309

申请日：2020-12-23

Applicant: Proton World International N.V. ,  STMicroelectronics (Rousset) SAS

Inventor： Youssef AHSSINI ,  Guy RESTIAU

IPC: G06F9/30 ,  G06Q20/10

Abstract: Embedded systems and methods of starting an embedded system are disclosed. A method of starting an embedded system includes executing first instructions, distinct from instructions of an operating system of the embedded system. The method further includes causing the storage of at least one application into a non-volatile memory in response to executing the first instructions.