中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

418 records (took 0.039 seconds)

    Method of fabricating a nitrogenated silicon oxide layer and MOS device having same
    41.
    发明授权
    Method of fabricating a nitrogenated silicon oxide layer and MOS device having same 有权
    制造氮化硅氧化物层的方法和具有其的MOS器件

    公开(公告)号：US07928020B2

    公开(公告)日：2011-04-19

    申请号：US11862865

    申请日：2007-09-27

    Applicant: Jinping Liu ,  Ben Ong ,  Zhengquan Zhang ,  Jae Gon Lee ,  Lydia Wong ,  Bin Yang ,  K. H. Alex See ,  Meisheng Zhou ,  Liang Choo Hsia

    Inventor： Jinping Liu ,  Ben Ong ,  Zhengquan Zhang ,  Jae Gon Lee ,  Lydia Wong ,  Bin Yang ,  K. H. Alex See ,  Meisheng Zhou ,  Liang Choo Hsia

    IPC: H01L21/00

    CPC classification number: H01L21/3143 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/31155 ,  H01L29/513 ,  H01L29/518

    Abstract: A method for fabricating a nitrogen-containing dielectric layer and semiconductor device including the dielectric layer in which a silicon oxide layer is formed on a substrate, such that an interface region resides adjacent to substrate and a surface region resides opposite the interface region. Nitrogen is introduced into the silicon oxide layer by applying a nitrogen plasma. After applying nitrogen plasma, the silicon oxide layer is annealed. The processes of introducing nitrogen into the silicon oxide layer and annealing the silicon oxide layer are repeated to create a bi-modal nitrogen concentration profile in the silicon oxide layer. In the silicon oxide layer, the peak nitrogen concentrations are situated away from the interface region and at least one of the peak nitrogen concentrations is situated in proximity to the surface region. A method for fabricating a semiconductor device is incorporating the nitrogen-containing silicon oxide layers also disclosed.

    Abstract translation: 一种含氮介电层的制造方法和包括在基板上形成氧化硅层的电介质层的半导体器件，使得界面区域与基板相邻，表面区域与界面区域相对。 通过施加氮等离子体将氮引入到氧化硅层中。 在施加氮等离子体之后，将氧化硅层退火。 重复将氧气引入氧化硅层并退火氧化硅层的过程，以在氧化硅层中产生双峰氮浓度分布。 在氧化硅层中，峰值氮浓度远离界面区域，并且峰值氮浓度中的至少一个位于表面区域附近。 还公开了一种制造半导体器件的方法，其中还包括含氮氧化硅层。

    MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT
    42.
    发明申请
    MOSFET WITH ASYMMETRICAL EXTENSION IMPLANT 有权
    具有非对称延伸植入物的MOSFET

    公开(公告)号：US20110024841A1

    公开(公告)日：2011-02-03

    申请号：US12904662

    申请日：2010-10-14

    Applicant: Frank Bin YANG ,  Andrew M. WAITE ,  Scott LUNING

    Inventor： Frank Bin YANG ,  Andrew M. WAITE ,  Scott LUNING

    IPC: H01L29/78 ,  H01L25/07

    CPC classification number: H01L21/26586 ,  H01L29/66659 ,  H01L29/7834 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

    Abstract: A method for fabricating a MOSFET (e.g., a PMOS FET) includes providing a semiconductor substrate having surface characterized by a (110) surface orientation or (110) sidewall surfaces, forming a gate structure on the surface, and forming a source extension and a drain extension in the semiconductor substrate asymmetrically positioned with respect to the gate structure. An ion implantation process is performed at a non-zero tilt angle. At least one spacer and the gate electrode mask a portion of the surface during the ion implantation process such that the source extension and drain extension are asymmetrically positioned with respect to the gate structure by an asymmetry measure.

    Abstract translation: 一种用于制造MOSFET（例如，PMOS FET）的方法包括提供具有由（110）表面取向或（110）侧壁表面表征的表面的半导体衬底，在表面上形成栅极结构，并形成源延伸和 半导体衬底中的漏极延伸部相对于栅极结构非对称地定位。 以非零倾角进行离子注入工艺。 在离子注入过程期间，至少一个间隔物和栅电极掩盖表面的一部分，使得源极延伸和漏极延伸通过不对称度量相对于栅极结构不对称地定位。

    BUTTON FOR IMPLANT HEALING ABUTMENT AND IMPLANT HEALING ABUTMENT HAVING PRESSING PART
    45.
    发明申请
    BUTTON FOR IMPLANT HEALING ABUTMENT AND IMPLANT HEALING ABUTMENT HAVING PRESSING PART 审中-公开
    用于植入式压实部件的植入物和植入物的植入物

    公开(公告)号：US20100233654A1

    公开(公告)日：2010-09-16

    申请号：US12681824

    申请日：2008-10-08

    Applicant: Ki Bin Yang

    Inventor： Ki Bin Yang

    IPC: A61C8/00

    CPC classification number: A61C8/008 ,  A61C8/005

    Abstract: A button for an implant healing abutment includes a button body coupled to an implant healing abutment; and a pressing part projecting sideward from the button body, wherein the pressing part covers, fixes and heals an incised gingival flap including attached gingiva. An implant healing abutment having a pressing part includes an implant healing abutment joined to an implant fixture; and a pressing part projecting sideward from the implant healing abutment, wherein the pressing part covers, fixes and heals an incised gingival flap including attached gingiva.

    Abstract translation: 用于植入物愈合基台的按钮包括联接到植入物愈合基台的按钮体; 以及从按钮体侧向突出的按压部，其中，所述按压部覆盖，固定和愈合包括附接的牙龈的切开的牙龈瓣。 具有按压部分的植入愈合基台包括接合到植入物夹具的植入愈合基台; 以及从所述植入物愈合基台侧向突出的按压部，其中所述按压部覆盖，固定和愈合包括附接的牙龈的切开的牙龈瓣。

    TRACK DETERMINATION
    48.
    发明申请
    TRACK DETERMINATION 审中-公开
    轨迹确定

    公开(公告)号：US20100202267A1

    公开(公告)日：2010-08-12

    申请号：US12766096

    申请日：2010-04-23

    Applicant: Chih-Yuan Chen ,  Jin-Bin Yang ,  Ching-Ning Chiu

    Inventor： Chih-Yuan Chen ,  Jin-Bin Yang ,  Ching-Ning Chiu

    IPC: G11B27/36

    CPC classification number: G11B20/1217 ,  G11B7/0053 ,  G11B7/24082 ,  G11B19/28 ,  G11B2020/1239 ,  G11B2020/1247 ,  G11B2020/1248

    Abstract: A light beam is scanned on a track of a recording medium, the track having a first track region and a second track region, each track region having a physical property that has recurring deviations. A wobble signal is derived from the light beam, the wobble signal having information associated with the recurring deviations. Whether the light beam is at the first track region or the second track region is determined based on a frequency, a period, or a pulse width of the wobble signal.

    Abstract translation: 在记录介质的轨道上扫描光束，轨道具有第一轨道区域和第二轨道区域，每个轨道区域具有重复偏差的物理特性。 从光束导出摆动信号，摆动信号具有与重复偏差相关联的信息。 基于摆动信号的频率，周期或脉冲宽度来确定光束是处于第一轨迹区域还是第二轨迹区域。

Patent Agency Ranking