公开(公告)号：US20200071640A1

公开(公告)日：2020-03-05

申请号：US16555183

申请日：2019-08-29

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Du Won LEE ,  Sang Dae LEE ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C11D7/50 ,  C11D11/00 ,  H01L21/027 ,  G03F7/42

Abstract: A thinner composition is capable of reducing the amount of photoresist used in a reducing resist consumption (RRC) coating process, an edge bead removed (EBR) process or the like, and removing unnecessary photoresist on an edge portion or a backside portion of the wafer. The thinner composition includes C1-C10 alkyl C1-C10 alkoxy propionate, propylene glycol C1-C10 alkyl ether, and propylene glycol C1-C10 alkyl ether acetate.

公开(公告)号：US10040741B2

公开(公告)日：2018-08-07

申请号：US14865493

申请日：2015-09-25

Applicant: Samsung Display Co. Ltd. ,  ENF TECHNOLOGY CO., LTD.

Inventor： Jae Woo Jeong ,  Hong Sick Park ,  Bong Kyun Kim ,  Seung Ho Yoon ,  Sang Dai Lee ,  Young Jin Park ,  Hyo Won Park ,  Sang Moon Yun

IPC: C07C41/42 ,  C07C41/46 ,  B01D3/00

CPC classification number: C07C41/42 ,  B01D3/009 ,  C07C41/46 ,  C07C43/11

Abstract: Provided is a method for manufacturing a glycol based compound. The method comprises agitating a mixture of a first glycol based compound, a hydrazide based compound, and a sulfonic acid based compound, and performing fractional distillation of resultant materials of the agitating to recover a second glycol based compound having a formaldehyde content of 0 ppm.

公开(公告)号：US20160297732A1

公开(公告)日：2016-10-13

申请号：US14865493

申请日：2015-09-25

Applicant: Samsung Display Co. Ltd. ,  ENF TECHNOLOGY CO., LTD.

Inventor： Jae Woo JEONG ,  Hong Sick PARK ,  Bong Kyun KIM ,  Seung Ho YOON ,  Sang Dai LEE ,  Young Jin PARK ,  Hyo Won PARK ,  Sang Moon YUN

IPC: C07C41/42 ,  C07C41/46 ,  B01D3/14

CPC classification number: C07C41/42 ,  B01D3/009 ,  C07C41/46 ,  C07C43/11

Abstract: Provided is a method for manufacturing a glycol based compound. The method comprises agitating a mixture of a first glycol based compound, a hydrazide based compound, and a sulfonic acid based compound, and performing fractional distillation of resultant materials of the agitating to recover a second glycol based compound having a formaldehyde content of 0 ppm.

Abstract translation: 提供一种二醇类化合物的制造方法。 该方法包括搅拌第一二醇基化合物，酰肼基化合物和磺酸基化合物的混合物，并对所得搅拌物质进行分馏，以回收甲醛含量为0ppm的第二种二醇类化合物。

公开(公告)号：US20160053382A1

公开(公告)日：2016-02-25

申请号：US14709110

申请日：2015-05-11

Applicant: LG DISPLAY CO., LTD. ,  ENF Technology Co., Ltd.

Inventor： Kang Rae JUNG ,  Hyo Seop SHIN

IPC: C23F1/18 ,  H01L29/786 ,  H01L29/66

Abstract: An etchant composition is disclosed which includes hydrogen peroxide, an etch inhibitor, a chelating agent, an etch additive, an oxide semiconductor protective agent, and a pH regulator. The oxide semiconductor protective agent is included in the etchant composition by about 0.1˜3.0 wt % based on the total weight of the etchant composition. Such an etchant composition according to the present disclosure does not include any fluoride base compound and has a high pH value of about 3.5˜6. As such, the etchant composition allows an oxide semiconductor to not be etched in an etch process of copper and a molybdenum alloy. Therefore, the etchant composition can minimize faults that can be easily generated during the etching process.

Abstract translation: 公开了一种蚀刻剂组合物，其包括过氧化氢，蚀刻抑制剂，螯合剂，蚀刻添加剂，氧化物半导体保护剂和pH调节剂。 基于蚀刻剂组合物的总重量，氧化物半导体保护剂在蚀刻剂组合物中包含约0.1〜3.0重量％。 根据本公开的这种蚀刻剂组合物不包括任何氟化物碱性化合物，并且具有约3.5〜6的高pH值。 因此，蚀刻剂组合物允许氧化物半导体在铜和钼合金的蚀刻工艺中不被蚀刻。 因此，蚀刻剂组合物可以最小化在蚀刻过程中容易产生的故障。