公开(公告)号：US20230212457A1

公开(公告)日：2023-07-06

申请号：US18077499

申请日：2022-12-08

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Jeong Sik OH ,  Tae Ho KIM ,  Gi Young KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/08 ,  H01L21/311

CPC classification number: C09K13/08 ,  H01L21/31111

Abstract: The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.
According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.

公开(公告)号：US20200071614A1

公开(公告)日：2020-03-05

申请号：US16557680

申请日：2019-08-30

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun KIM ,  Hyeon Woo PARK ,  Jang Woo CHO ,  Tae Ho KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/06 ,  H01L21/311

Abstract: Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.

公开(公告)号：US20220403243A1

公开(公告)日：2022-12-22

申请号：US17739489

申请日：2022-05-09

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Jeong Sik OH ,  Tae Ho KIM ,  Gi Young KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/08

Abstract: The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.
The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.

公开(公告)号：US20220380670A1

公开(公告)日：2022-12-01

申请号：US17737636

申请日：2022-05-05

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Tae Ho KIM ,  Jeong Sik OH ,  Gi Young KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/08 ,  C07F7/08 ,  C01B33/20

Abstract: The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.
The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.

公开(公告)号：US20220089952A1

公开(公告)日：2022-03-24

申请号：US17446414

申请日：2021-08-30

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun KIM ,  Hyeon Woo PARK ,  Sung Jun HONG ,  Myung Ho LEE ,  Myung Geun SONG ,  Hoon Sik KIM ,  Jae Jung KO ,  Myong Euy LEE ,  Jun Hyeok HWANG

IPC: C09K13/06 ,  C23F1/02 ,  C23F1/44 ,  H01L21/3213

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

公开(公告)号：US20190390110A1

公开(公告)日：2019-12-26

申请号：US16416089

申请日：2019-05-17

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun KIM ,  Hyeon Woo PARK ,  Du Won LEE ,  Jang Woo CHO ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/06 ,  H01L21/311 ,  C09K13/08

Abstract: Provided is a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition including two different silicon-based compounds in an etching composition to be capable of selectively etching a silicon nitride layer relative to a silicon oxide layer with a remarkable etch selectivity ratio and providing remarkable effects of suppressing generation of precipitates and reducing the abnormal growth of other layers existing in the vicinity, including the silicon oxide layer when the silicon nitride layer etching composition is used for an etching process and a semiconductor manufacturing process.

公开(公告)号：US20230086417A1

公开(公告)日：2023-03-23

申请号：US17871094

申请日：2022-07-22

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Jeong Sik OH ,  Tae Ho KIM ,  Gi Young KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C11D1/00 ,  C11D11/00 ,  C11D3/43 ,  C11D3/18

Abstract: The present invention relates to a composition for treating a semiconductor substrate, and particularly to a composition for treating an edge portion of a wafer coated with polysilazane.
According to the composition for treating a semiconductor substrate according to the present invention, it is possible to uniformly maintain the quality of the composition in terms of management and to uniformly treat the boundary of the wafer in terms of processing. In addition, by improving the straightness of the boundary portion where polysilazane is removed, it is possible to significantly reduce the defect rate of the product and to stably improve the productivity yield.

公开(公告)号：US20220135915A1

公开(公告)日：2022-05-05

申请号：US17447640

申请日：2021-09-14

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Jun HER ,  Na Rae YIM ,  Hyun Jin JUNG ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C11D11/00 ,  C11D3/04 ,  C11D3/28 ,  C11D3/00 ,  C11D3/30

Abstract: A cleaning composition for removing post-etch or post-ash residues from a semiconductor substrate, and a cleaning method using the same are disclosed. The cleaning composition can comprise water; a fluorine compound; an alkanolamine compound; and a corrosion inhibitor. The corrosion inhibitor is a mixture of a first corrosion inhibitor and a second corrosion inhibitor. When using the cleaning composition, it is possible to efficiently remove the residues of various aspects existing on a surface of the substrate or the semiconductor device without damage to a substrate or a semiconductor device including various metal layers, insulating layers, etc. Accordingly, when a highly integrated and miniaturized semiconductor device is manufactured, it may be advantageously applied to the removal of residues generated on the surface of the substrate or the semiconductor device.

公开(公告)号：US20200339879A1

公开(公告)日：2020-10-29

申请号：US16855864

申请日：2020-04-22

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Hye Hee LEE ,  Hyeon Woo PARK ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/06

Abstract: Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.

公开(公告)号：US20240150654A1

公开(公告)日：2024-05-09

申请号：US18077509

申请日：2022-12-08

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Gi Young KIM ,  Hak Soo KIM ,  Jeong Sik OH ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/08

CPC classification number: C09K13/08 ,  H01L21/30604

Abstract: The present invention relates to a composition for selectively etching silicon on a surface on which a silicon oxide film (SiO2) and silicon (Si) are exposed. According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface.