STEEL PLATE STRUCTURE AND STEEL PLATE CONCRETE WALL
    41.
    发明申请
    STEEL PLATE STRUCTURE AND STEEL PLATE CONCRETE WALL 审中-公开
    钢板结构和钢板混凝土墙

    公开(公告)号:US20100132291A1

    公开(公告)日:2010-06-03

    申请号:US12452300

    申请日:2008-06-26

    CPC classification number: E04B2/40 E04B2/562 E04B2/58 E04B2/8635

    Abstract: A steel plate structure and a steel plate concrete wall are disclosed. A steel plate structure, which includes: a pair of steel plates, which are separated to provide a predetermined space; a structural member, which is positioned in the predetermined space, and which is structurally rigidly joined to one side of the steel plate in the direction of gravity; and a strut, which maintains a separation distance between the pair of steel plates, can be utilized to reduce the overall thickness of a steel plate concrete wall for efficient use of space, and to reduce the thickness of the steel plates for better welding properties and larger unit module sizes. Also, the axial forces or lateral forces applied on the steel plate concrete wall may be effectively resisted.

    Abstract translation: 公开了钢板结构和钢板混凝土墙。 一种钢板结构,其包括:一对钢板,其被分离以提供预定空间; 结构构件,其位于预定空间中,并且在重力方向上结构上刚性地连接到钢板的一侧; 并且可以利用在一对钢板之间保持间隔距离的支柱,以减少钢板混凝土壁的总体厚度以有效利用空间,并且减小钢板的厚度以获得更好的焊接性能, 更大的单元模块尺寸。 此外,可以有效地抵抗施加在钢板混凝土墙壁上的轴向力或侧向力。

    Semiconductor Devices Including Transistors Having a Recessed Channel Region and Methods of Fabricating the Same
    43.
    发明申请
    Semiconductor Devices Including Transistors Having a Recessed Channel Region and Methods of Fabricating the Same 审中-公开
    包括具有嵌入式通道区域的晶体管的半导体器件及其制造方法

    公开(公告)号:US20080296670A1

    公开(公告)日:2008-12-04

    申请号:US12128190

    申请日:2008-05-28

    CPC classification number: H01L29/66621 H01L21/26586 H01L29/78

    Abstract: Some embodiments of the present invention provide semiconductor devices including a gate trench in an active region of a semiconductor substrate and a gate electrode in the gate trench. A low-concentration impurity region is provided in the active region adjacent to a sidewall of the gate trench. A high-concentration impurity region is provided between the low-concentration impurity region and the sidewall of the gate trench and along the sidewall of the gate trench. Related methods of fabricating semiconductor devices are also provided herein.

    Abstract translation: 本发明的一些实施例提供半导体器件,其包括半导体衬底的有源区中的栅极沟槽和栅极沟槽中的栅电极。 在与栅极沟槽的侧壁相邻的有源区域中提供低浓度杂质区域。 在低浓度杂质区域和栅极沟槽的侧壁之间并且沿着栅极沟槽的侧壁设置高浓度杂质区域。 本文还提供了制造半导体器件的相关方法。

    Upper frame structure for supporting cab of construction machinery
    44.
    发明授权
    Upper frame structure for supporting cab of construction machinery 失效
    工程机械配套驾驶室上框架结构

    公开(公告)号:US07445272B2

    公开(公告)日:2008-11-04

    申请号:US11820665

    申请日:2007-06-20

    Applicant: Jin Woo Lee

    Inventor: Jin Woo Lee

    CPC classification number: E02F9/121 E02F9/163

    Abstract: An upper frame structure for supporting a cab of construction machinery is disclosed, which can support the cap mounted on the upper frame when a vertical load, which is so much that the cab structure is plastically deformed, is applied to the upper frame. The upper frame structure includes a center frame having a bottom plate on which a swing ring gear is mounted and a pair of side plates vertically fixed to the bottom plate and on which operation devices are mounted; a left frame mounted on a left side of the center frame and having a left side frame on which the cab is mounted; reinforcement members each of which has one end fixed by welding to a side surface of the side plate of the center frame and the other end fixed by welding to a side surface of the left side frame, and on which the cap is mounted; and a fastening member installed on the bottom plate to offset a load vertically applied to the cab and a load laterally applied to the cab, and fixing the reinforcement member to the bottom plate.

    Abstract translation: 公开了一种用于支撑工程机械的驾驶室的上框架结构,当垂直载荷(其使得驾驶室结构发生塑性变形)被施加到上框架时,可以支撑安装在上框架上的盖。 上框架结构包括具有安装有摆动环形齿轮的底板的中心框架和垂直固定在底板上并在其上安装有操作装置的一对侧板; 左框架安装在中心框架的左侧,并具有安装有驾驶室的左侧框架; 加强构件,其一端通过焊接固定在中心框架的侧板的侧面上,另一端通过焊接固定到左侧框架的侧表面,并在其上安装盖; 以及紧固构件,其安装在底板上以抵消垂直施加到驾驶室的负载和横向施加到驾驶室的负载,并将加强构件固定到底板。

    Communication Between Mobile Terminals and Service Providers
    45.
    发明申请
    Communication Between Mobile Terminals and Service Providers 有权
    移动终端和服务提供商之间的通信

    公开(公告)号:US20080247348A1

    公开(公告)日:2008-10-09

    申请号:US11696282

    申请日:2007-04-04

    Abstract: An intermediate service provider operates to mediate communications between mobile terminals and various service providers. In one embodiment, the intermediate service provider and a given mobile terminal establish a persistent session supported by a logical communication channel that is used to convey communications for all of the various service applications implemented by the mobile terminal, i.e., a single, multiplexed channel. In another embodiment, common command subsystems are used to support the multiple service applications, thereby reducing overhead resulting from multiple protocol headers. In yet another embodiment, establishment of communications with various service providers begins with a single connection request message that specifies at least two selected service applications such that the intermediate service provider can establish communications with the multiple service providers in response to the single connection request message.

    Abstract translation: 中间服务提供商操作以调解移动终端与各种服务提供商之间的通信。 在一个实施例中,中间服务提供商和给定移动终端建立由逻辑通信信道支持的持续会话,该持续会话用于传送由移动终端实施的所有各种服务应用的通信,即单个多路复用的信道。 在另一个实施例中,常用命令子系统用于支持多个服务应用,从而减少由多个协议头部产生的开销。 在另一个实施例中,与各种服务提供商建立通信开始于指定至少两个所选择的服务应用的单个连接请求消息,使得中间服务提供商可以响应于单个连接请求消息来建立与多个服务提供商的通信。

    Semiconductor devices including transistors having recessed channels and methods of fabricating the same
    47.
    发明申请
    Semiconductor devices including transistors having recessed channels and methods of fabricating the same 失效
    包括具有凹陷通道的晶体管的半导体器件及其制造方法

    公开(公告)号:US20080001230A1

    公开(公告)日:2008-01-03

    申请号:US11704872

    申请日:2007-02-09

    Abstract: Semiconductor devices including an isolation layer on a semiconductor substrate are provided. The isolation layer defines an active region of the semiconductor substrate. The device further includes an upper gate electrode crossing over the active region and extending to the isolation layer and lower active gate electrode. The lower active gate electrode includes a first active gate electrode extending from the upper gate electrode to the active region and a second active gate electrode below the first active gate electrode and having a greater width than a width of the first active gate electrode. The device further includes a lower field gate electrode that extends from the upper gate electrode to the isolation layer and has a bottom surface that is at a lower level than a bottom surface of the active gate electrode such that the sidewalls of the active region are covered below the lower active gate electrode. Related methods of fabricating semiconductor devices are also provided herein.

    Abstract translation: 提供包括半导体衬底上的隔离层的半导体器件。 隔离层限定半导体衬底的有源区。 该器件还包括与有源区交叉并延伸到隔离层和下活性栅电极的上栅电极。 下有源栅电极包括从上栅极延伸到有源区的第一有源栅电极和位于第一有源栅电极下方并且具有比第一有源栅电极的宽度更大的宽度的第二有源栅电极。 该器件还包括一个从上部栅电极延伸到隔离层的下部栅极电极,并且具有一底部表面,该底表面处于与该有源栅极电极的底表面相比较低的位置,使得该有源区域的侧壁被覆盖 在下部有源栅电极下方。 本文还提供了制造半导体器件的相关方法。

    Method of manufacturing a semiconductor memory device including a transistor
    48.
    发明授权
    Method of manufacturing a semiconductor memory device including a transistor 失效
    制造包括晶体管的半导体存储器件的方法

    公开(公告)号:US07247541B2

    公开(公告)日:2007-07-24

    申请号:US11171710

    申请日:2005-06-30

    Abstract: A semiconductor device comprises a plurality of gate structures formed on a substrate, a gate spacer formed on a sidewall of the gate structures, a semiconductor pattern formed on the substrate between the gate structures, a first impurity region and a second impurity region formed in the semiconductor pattern and at surface portions of the substrate, respectively, wherein the first and second impurity regions include a first conductive type impurity, and a channel doping region surrounding the first impurity region, wherein the channel doping region includes a second conductive type impurity.

    Abstract translation: 半导体器件包括形成在衬底上的多个栅极结构,形成在栅极结构的侧壁上的栅极间隔物,形成在栅极结构之间的衬底上的半导体图案,形成在栅极结构中的第一杂质区域和第二杂质区域 半导体图案和衬底的表面部分,其中第一和第二杂质区域包括第一导电类型杂质和围绕第一杂质区的沟道掺杂区域,其中沟道掺杂区域包括第二导电类型杂质。

    Methods and apparatuses of separating cells using magnets and droplet type cell suspension
    49.
    发明授权
    Methods and apparatuses of separating cells using magnets and droplet type cell suspension 失效
    使用磁体和液滴型细胞悬浮液分离细胞的方法和装置

    公开(公告)号:US07189560B2

    公开(公告)日:2007-03-13

    申请号:US10878357

    申请日:2004-06-28

    CPC classification number: C12M47/04 C12M47/02 C12N1/02

    Abstract: Disclosed are methods and apparatuses for separating cells using magnets and droplet type cell suspension according to the present invention, which may effectively separate cells by forming droplet type cell suspension with cell suspension sample containing cells to which magnetic beads are coupled and applying magnetic force to the droplet type cell suspension.The apparatus of separating cells according to the present invention includes: a droplet type cell suspension forming part for forming a droplet type cell suspension under a lower part of the droplet type cell suspension forming part with cell suspension sample containing cells to which magnetic beads are coupled; a cell suspension inlet for supplying the droplet type cell suspension forming part with the cell suspension sample; a magnet for applying magnetic force to the droplet type cell suspension; a cell buffer inlet for supplying the droplet type cell suspension with cell buffer; and a temperature maintaining part for maintaining a temperature of the droplet type cell suspension.

    Abstract translation: 公开了根据本发明的使用磁体和液滴型细胞悬浮液分离细胞的方法和装置,其可以通过用含有磁珠耦合的细胞的细胞悬液样品形成液滴型细胞悬浮液来有效地分离细胞,并将磁力施加到 液滴型细胞悬浮液。 根据本发明的分离细胞的装置包括:液滴型细胞悬浮液形成部分,用于在液滴型细胞悬浮液形成部分的下部形成液滴型细胞悬浮液,其中细胞悬液样品含有磁珠偶合的细胞 ; 用于向液滴型细胞悬浮液形成部分供应细胞悬液样品的细胞悬液入口; 用于向液滴型细胞悬浮液施加磁力的磁体; 用于向液滴型细胞悬液提供细胞缓冲液的细胞缓冲液入口; 以及用于保持液滴型细胞悬浮液的温度的温度保持部。

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