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    Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units
    41.
    发明授权
    Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units 有权
    含有低聚噻吩和n型杂芳族单元的有机半导体共聚物

    公开(公告)号：US08313978B2

    公开(公告)日：2012-11-20

    申请号：US13200407

    申请日：2011-09-23

    Applicant: Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

    Inventor： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

    IPC: H01L51/54

    CPC classification number: H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

    Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

    Abstract translation: 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接收单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受杂芳族结构或包含C2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。

    Organic electronic device
    42.
    发明授权
    Organic electronic device 有权
    有机电子设备

    公开(公告)号：US08134145B2

    公开(公告)日：2012-03-13

    申请号：US11654585

    申请日：2007-01-18

    Applicant: Sang Yoon Lee ,  Jung Seok Hahn ,  Kook Min Han ,  Bon Won Koo ,  Hyun Sik Moon

    Inventor： Sang Yoon Lee ,  Jung Seok Hahn ,  Kook Min Han ,  Bon Won Koo ,  Hyun Sik Moon

    IPC: H01L51/30 ,  H01L51/40

    CPC classification number: H01L51/0048 ,  B82Y10/00 ,  H01L51/0003 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105 ,  Y02E10/549

    Abstract: Disclosed is an organic electronic device, in which a semiconductor layer and source/drain electrodes may be formed from materials of the same type, suitable for a room-temperature wet process, and thus have surface properties similar to each other, thereby decreasing contact resistance between the semiconductor layer and the source/drain electrodes. The materials for formation of the semiconductor layer and source/drain electrodes may be organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in predetermined or given amounts. As such, the conductivity of a semiconductor or conductor may vary depending on the amount of carbon-based nanoparticles.

    Abstract translation: 公开了一种有机电子器件，其中半导体层和源极/漏极可以由适合于室温湿法的相同类型的材料形成，因此具有彼此相似的表面特性，从而降低接触电阻 在半导体层和源极/漏极之间。 用于形成半导体层和源/漏电极的材料可以是通过以预定或给定的量向有机半导体材料中添加碳基纳米颗粒而获得的有机半导体型材料。 因此，半导体或导体的导电性可以根据碳基纳米颗粒的量而变化。

    Organic semiconductor copolymers containing oligothiophene and η-type heteroaromatic units
    43.
    发明授权
    Organic semiconductor copolymers containing oligothiophene and η-type heteroaromatic units 有权
    含有低聚噻吩和异构芳香族单元的有机半导体共聚物

    公开(公告)号：US08053764B2

    公开(公告)日：2011-11-08

    申请号：US12054134

    申请日：2008-03-24

    Applicant: Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

    Inventor： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

    IPC: H01L51/54

    CPC classification number: H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

    Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

    Abstract translation: 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接收单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受杂芳族结构或包含C2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。

    Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same
    44.
    发明授权
    Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same 有权
    制造有机薄膜晶体管的方法和使用其制造的有机薄膜晶体管

    公开(公告)号：US08053761B2

    公开(公告)日：2011-11-08

    申请号：US11604826

    申请日：2006-11-28

    Applicant: Jung Seok Hahn ,  Bon Won Koo ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

    Inventor： Jung Seok Hahn ,  Bon Won Koo ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

    IPC: H01L51/10 ,  H01L51/30 ,  H01L51/40

    CPC classification number: H01L51/105 ,  H01L51/0036 ,  H01L51/0545 ,  H01L2251/308

    Abstract: Disclosed are methods of fabricating organic thin film transistors composed of a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes, and an organic semiconductor layer. The methods include applying a sufficient quantity of a self-assembled monolayer compound containing a live ion to the surfaces of the metal oxide electrodes to form a self-assembled monolayer. The presence of the live ion at the interface between the metal oxide electrodes and the organic semiconductor layer modifies the relative work function of these materials. Further, the presence of the self-assembled monolayer on the gate insulating film tends to reduce hysteresis. Accordingly, organic thin film transistors fabricated in accord with the example embodiments tend to exhibit improved charge mobility, improved gate insulating film properties and decreased hysteresis associated with the organic insulator.

    Abstract translation: 公开了制造由基板，栅极，栅极绝缘膜，金属氧化物源极/漏极和有机半导体层组成的有机薄膜晶体管的方法。 所述方法包括将足够量的含有活性离子的自组装单层化合物施加到金属氧化物电极的表面以形成自组装单层。 在金属氧化物电极和有机半导体层之间的界面处存在活性离子来改变这些材料的相对功函数。 此外，在栅极绝缘膜上存在自组装单层趋于减小滞后。 因此，根据示例性实施例制造的有机薄膜晶体管倾向于表现出改善的电荷迁移率，改善的栅极绝缘膜性质和与有机绝缘体相关联的减小的滞后。

    Perfluoropolyether copolymer composition for forming banks
    47.
    发明授权
    Perfluoropolyether copolymer composition for forming banks 有权
    用于形成银的全氟聚醚共聚物组合物

    公开(公告)号：US07820730B2

    公开(公告)日：2010-10-26

    申请号：US11710489

    申请日：2007-02-26

    Applicant: Jung Seok Hahn ,  Kyu Yeol In ,  Bon Won Koo ,  Kook Min Han ,  Sang-Yoon Lee

    Inventor： Jung Seok Hahn ,  Kyu Yeol In ,  Bon Won Koo ,  Kook Min Han ,  Sang-Yoon Lee

    IPC: C08L71/02 ,  G03F7/004

    CPC classification number: G03F7/0046 ,  C08G65/007 ,  C08L29/04 ,  C08L71/02 ,  C08L2205/05 ,  G03F7/032 ,  G03F7/033 ,  G03F7/04 ,  G03F7/0757 ,  C08L2666/04

    Abstract: Disclosed are a copolymer of a perfluoropolyether derivative and a photosensitive polymer, a composition for forming banks comprising the copolymer, and a method for forming banks using the composition. Also disclosed is an organic thin film transistor including the composition and an electronic device including the organic thin film transistor. The use of the copolymer may enable the formation of banks by a solution coating process. Because an organic thin film transistor including banks formed by the method may be fabricated without any degradation in the characteristics of the organic thin film transistor, improved electronic properties may be exhibited.

    Abstract translation: 公开了全氟聚醚衍生物和光敏聚合物的共聚物，用于形成包含该共聚物的基团的组合物，以及使用该组合物形成银的方法。 还公开了包括该组合物的有机薄膜晶体管和包括该有机薄膜晶体管的电子器件。 共聚物的使用可以通过溶液涂覆方法形成堤。 因为可以制造包括通过该方法形成的堤的有机薄膜晶体管，而不会降低有机薄膜晶体管的特性，所以可以表现出改善的电子特性。

    Organic thin film transistor having surface-modified carbon nanotubes
    49.
    发明授权
    Organic thin film transistor having surface-modified carbon nanotubes 有权
    具有表面改性碳纳米管的有机薄膜晶体管

    公开(公告)号：US07763885B2

    公开(公告)日：2010-07-27

    申请号：US11898977

    申请日：2007-09-18

    Applicant: Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

    Inventor： Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

    IPC: H01L51/10

    CPC classification number: H01L51/0049 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566 ,  Y10S977/745

    Abstract: An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage.

    Abstract translation: 有机薄膜晶体管可以包括具有表面改性的碳纳米管和导电聚合物的有机半导体层。 碳纳米管的表面可以用可固化官能团改性，包括环氧乙烷基团和酸酐基团。 可以使用室温溶液法以简单和经济的方式提供相对均匀且相对高度粘合的有机半导体层。 另外，具有有机半导体层的有机薄膜晶体管可以具有相对高的载流子迁移率和相对低的阈值电压。

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