公开(公告)号：US07763885B2

公开(公告)日：2010-07-27

申请号：US11898977

申请日：2007-09-18

申请人： Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

发明人： Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

IPC分类号： H01L51/10

CPC分类号： H01L51/0049 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566 ,  Y10S977/745

摘要： An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage.

摘要翻译： 有机薄膜晶体管可以包括具有表面改性的碳纳米管和导电聚合物的有机半导体层。 碳纳米管的表面可以用可固化官能团改性，包括环氧乙烷基团和酸酐基团。 可以使用室温溶液法以简单和经济的方式提供相对均匀且相对高度粘合的有机半导体层。 另外，具有有机半导体层的有机薄膜晶体管可以具有相对高的载流子迁移率和相对低的阈值电压。

公开(公告)号：US20080191198A1

公开(公告)日：2008-08-14

申请号：US11898977

申请日：2007-09-18

申请人： Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

发明人： Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

IPC分类号： H01L51/10

CPC分类号： H01L51/0049 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566 ,  Y10S977/745

摘要： An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage.

摘要翻译： 有机薄膜晶体管可以包括具有表面改性的碳纳米管和导电聚合物的有机半导体层。 碳纳米管的表面可以用可固化官能团改性，包括环氧乙烷基团和酸酐基团。 可以使用室温溶液法以简单和经济的方式提供相对均匀且相对高度粘合的有机半导体层。 另外，具有有机半导体层的有机薄膜晶体管可以具有相对高的载流子迁移率和相对低的阈值电压。

公开(公告)号：US20090121216A9

公开(公告)日：2009-05-14

申请号：US11898977

申请日：2007-09-18

申请人： Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

发明人： Kook Min Han ,  Kyu Yeol In ,  Jong Jin Park ,  Hyun Sik Moon ,  Sang Yoon Lee

IPC分类号： H01L51/10

CPC分类号： H01L51/0049 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566 ,  Y10S977/745

摘要： An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage.

摘要翻译： 有机薄膜晶体管可以包括具有表面改性的碳纳米管和导电聚合物的有机半导体层。 碳纳米管的表面可以用可固化官能团改性，包括环氧乙烷基团和酸酐基团。 可以使用室温溶液法以简单和经济的方式提供相对均匀且相对高度粘合的有机半导体层。 另外，具有有机半导体层的有机薄膜晶体管可以具有相对高的载流子迁移率和相对低的阈值电压。

公开(公告)号：US08134145B2

公开(公告)日：2012-03-13

申请号：US11654585

申请日：2007-01-18

申请人： Sang Yoon Lee ,  Jung Seok Hahn ,  Kook Min Han ,  Bon Won Koo ,  Hyun Sik Moon

发明人： Sang Yoon Lee ,  Jung Seok Hahn ,  Kook Min Han ,  Bon Won Koo ,  Hyun Sik Moon

IPC分类号： H01L51/30 ,  H01L51/40

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0003 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105 ,  Y02E10/549

摘要： Disclosed is an organic electronic device, in which a semiconductor layer and source/drain electrodes may be formed from materials of the same type, suitable for a room-temperature wet process, and thus have surface properties similar to each other, thereby decreasing contact resistance between the semiconductor layer and the source/drain electrodes. The materials for formation of the semiconductor layer and source/drain electrodes may be organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in predetermined or given amounts. As such, the conductivity of a semiconductor or conductor may vary depending on the amount of carbon-based nanoparticles.

摘要翻译： 公开了一种有机电子器件，其中半导体层和源极/漏极可以由适合于室温湿法的相同类型的材料形成，因此具有彼此相似的表面特性，从而降低接触电阻 在半导体层和源极/漏极之间。 用于形成半导体层和源/漏电极的材料可以是通过以预定或给定的量向有机半导体材料中添加碳基纳米颗粒而获得的有机半导体型材料。 因此，半导体或导体的导电性可以根据碳基纳米颗粒的量而变化。

公开(公告)号：US20070278481A1

公开(公告)日：2007-12-06

申请号：US11654585

申请日：2007-01-18

申请人： Sang Yoon Lee ,  Jung Seok Hahn ,  Kook Min Han ,  Bon Won Koo ,  Hyun Sik Moon

发明人： Sang Yoon Lee ,  Jung Seok Hahn ,  Kook Min Han ,  Bon Won Koo ,  Hyun Sik Moon

IPC分类号： H01L51/05 ,  H01L51/40

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0003 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105 ,  Y02E10/549

摘要： Disclosed is an organic electronic device, in which a semiconductor layer and source/drain electrodes may be formed from materials of the same type, suitable for a room-temperature wet process, and thus have surface properties similar to each other, thereby decreasing contact resistance between the semiconductor layer and the source/drain electrodes. The materials for formation of the semiconductor layer and source/drain electrodes may be organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in predetermined or given amounts. As such, the conductivity of a semiconductor or conductor may vary depending on the amount of carbon-based nanoparticles.

摘要翻译： 公开了一种有机电子器件，其中半导体层和源极/漏极可以由适合于室温湿法的相同类型的材料形成，因此具有彼此相似的表面特性，从而降低接触电阻 在半导体层和源极/漏极之间。 用于形成半导体层和源/漏电极的材料可以是通过以预定或给定的量向有机半导体材料中添加碳基纳米颗粒而获得的有机半导体型材料。 因此，半导体或导体的导电性可以根据碳基纳米颗粒的量而变化。

公开(公告)号：US07692021B2

公开(公告)日：2010-04-06

申请号：US11508925

申请日：2006-08-24

申请人： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

发明人： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

IPC分类号： C07D277/20 ,  C07D277/60

CPC分类号： C07D495/04 ,  C07D417/14 ,  H01L51/0545 ,  H01L51/5048

摘要： Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

摘要翻译： 本文公开了NPN型低分子芳环化合物，由这些化合物形成的有机半导体层，其表现出改进的电稳定性，并且使用基于溶液的方法形成这种层的方法，例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜，然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜，该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料，从而改善所得器件的电性能。

公开(公告)号：US08097694B2

公开(公告)日：2012-01-17

申请号：US12382033

申请日：2009-03-06

申请人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

发明人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

IPC分类号： C08F38/00 ,  H01L51/40 ,  C08G83/00

CPC分类号： H01L51/0545 ,  C07D333/18 ,  H01L51/0003 ,  H01L51/0068 ,  Y02E10/549 ,  Y02P70/521

摘要： Disclosed are organic semiconductor thin films using aromatic enediyne derivatives, manufacturing methods thereof, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices.

摘要翻译： 公开了使用芳族烯二炔衍生物的有机半导体薄膜，其制造方法，以及制造结合有机半导体薄膜的电子器件的制造方法。 根据示例性实施方案的芳族烯二炔衍生物提供改善的化学和/或电稳定性，其可以提高所得半导体器件的可靠性。 根据示例性实施方案的芳族烯二炔衍生物还可适用于通过基于溶液的方法例如旋涂，在室温或接近室温的温度下沉积在各种基材上，以形成涂膜，然后将其加热形成有机半导体薄膜 电影。 这种降低温度处理的可用性允许在大衬底表面上和/或不适于较高温度处理的衬底上使用芳族烯二炔衍生物。 因此，根据示例性实施例的有机半导体薄膜可以结合在薄膜晶体管，电致发光器件，太阳能电池和存储器件中。

公开(公告)号：US20070166871A1

公开(公告)日：2007-07-19

申请号：US11508925

申请日：2006-08-24

申请人： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

发明人： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

IPC分类号： H01L51/40 ,  C07D417/14 ,  C07D497/14

CPC分类号： C07D495/04 ,  C07D417/14 ,  H01L51/0545 ,  H01L51/5048

摘要： Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

摘要翻译： 本文公开了NPN型低分子芳环化合物，由这些化合物形成的有机半导体层，其表现出改进的电稳定性，并且使用基于溶液的方法形成这种层的方法，例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜，然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜，该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料，从而改善所得器件的电性能。

公开(公告)号：US20090263932A1

公开(公告)日：2009-10-22

申请号：US12382033

申请日：2009-03-06

申请人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

发明人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  C07D333/18 ,  H01L51/0003 ,  H01L51/0068 ,  Y02E10/549 ,  Y02P70/521

摘要： Disclosed are organic semiconductor thin films using aromatic enediyne derivatives, manufacturing methods thereof, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices.

摘要翻译： 公开了使用芳族烯二炔衍生物的有机半导体薄膜，其制造方法，以及制造结合有机半导体薄膜的电子器件的制造方法。 根据示例性实施方案的芳族烯二炔衍生物提供改善的化学和/或电稳定性，其可以提高所得半导体器件的可靠性。 根据示例性实施方案的芳族烯二炔衍生物还可适用于通过基于溶液的方法例如旋涂，在室温或接近室温的温度下沉积在各种基材上，以形成涂膜，然后将其加热形成有机半导体薄膜 电影。 这种降低温度处理的可用性允许在大衬底表面上和/或不适于较高温度处理的衬底上使用芳族烯二炔衍生物。 因此，根据示例性实施例的有机半导体薄膜可以结合在薄膜晶体管，电致发光器件，太阳能电池和存储器件中。

公开(公告)号：US07534899B2

公开(公告)日：2009-05-19

申请号：US11583085

申请日：2006-10-19

申请人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

发明人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

IPC分类号： C07D409/14

CPC分类号： H01L51/0545 ,  C07D333/18 ,  H01L51/0003 ,  H01L51/0068 ,  Y02E10/549 ,  Y02P70/521

摘要： Disclosed are aromatic enediyne derivatives, methods of manufacturing organic semiconductor thin films from such aromatic enediyne derivatives, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices.

摘要翻译： 公开了芳族烯二炔衍生物，从这种芳族烯二炔衍生物制造有机半导体薄膜的方法，以及制造并入这种有机半导体薄膜的电子器件的方法。 根据示例性实施方案的芳族烯二炔衍生物提供改善的化学和/或电稳定性，其可以提高所得半导体器件的可靠性。 根据示例性实施方案的芳族烯二炔衍生物还可适用于通过基于溶液的方法例如旋涂，在室温或接近室温的温度下沉积在各种基材上，以形成涂膜，然后将其加热形成有机半导体薄膜 电影。 这种降低温度处理的可用性允许在大衬底表面上和/或不适于较高温度处理的衬底上使用芳族烯二炔衍生物。 因此，根据示例性实施例的有机半导体薄膜可以结合在薄膜晶体管，电致发光器件，太阳能电池和存储器件中。