公开(公告)号：US07407894B2

公开(公告)日：2008-08-05

申请号：US10525848

申请日：2003-08-27

申请人： Masakazu Kobayashi ,  Mitsuo Takeda

发明人： Masakazu Kobayashi ,  Mitsuo Takeda

IPC分类号： H01L21/469

CPC分类号： B82Y30/00 ,  C01B17/42 ,  C01B19/002 ,  C01B19/007 ,  C01F17/0037 ,  C01F17/0093 ,  C01P2002/60 ,  C01P2002/84 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2004/80 ,  C09K11/025 ,  C09K11/565 ,  C09K11/623 ,  C09K11/883

摘要： There are provided: compound semiconductor particles that can display more excellent performance in functions peculiar to the compound semiconductor (e.g. luminosity and luminescence efficiency); and a production process for obtaining such compound semiconductor particles with economy, good productivity, and ease.Compound semiconductor particles, according to the present invention, are characterized by comprising body particles and a metal oxide, wherein the body particles have particle diameters of smaller than 1 μm and are covered with the metal oxide and include a compound semiconductor including an essential element combination of at least one element X selected from the group consisting of C, Si, Ge, Sn, Pb, N, P, As, Sb, S, Se, and Te and at least one metal element M that is not identical with the element X, and wherein the metal oxide is a metal oxide to which an acyloxyl group is bonded.

摘要翻译： 提供：可以在化合物半导体特有的功能（例如亮度和发光效率）下显示更优异的性能的化合物半导体颗粒; 以及具有经济，良好的生产率和容易性获得这种化合物半导体颗粒的生产方法。 根据本发明的化合物半导体颗粒的特征在于包括体颗粒和金属氧化物，其中体微粒的粒径小于1μm，并被金属氧化物覆盖，并且包括包含必需元素组合的化合物半导体 的选自由C，Si，Ge，Sn，Pb，N，P，As，Sb，S，Se和Te组成的组中的至少一种元素X，以及与元素不同的至少一种金属元素M X，并且其中所述金属氧化物是键合有酰氧基的金属氧化物。

公开(公告)号：US20070239411A1

公开(公告)日：2007-10-11

申请号：US11632406

申请日：2005-07-13

申请人： Shinsuke Yamashita ,  Masakazu Kobayashi ,  Shinji Nishiwaki ,  Kazuhiro Izui ,  Masataka Yoshimura ,  Naohide Tomita

发明人： Shinsuke Yamashita ,  Masakazu Kobayashi ,  Shinji Nishiwaki ,  Kazuhiro Izui ,  Masataka Yoshimura ,  Naohide Tomita

IPC分类号： G06G7/48

CPC分类号： G06F17/5018

摘要： The optimal design support system is to design a structure that outputs a desired load or displacement to a portion by using elastic deformation when a load or displacement is applied to a predetermined portion. More specifically, the optimal design support system comprises a structure creating part 11 that creates a structure FM as being an integrated structure of multiple mutually different types of elements by changing a material layout within a design domain D so as to minimize the difference between the output load or displacement and the desired load or displacement and to maximize the stiffness of the object globally, an initial shape setting part 12 that sets a feasible initial shape IS corresponding to the function of each element which forms the structure FM, and a shape changing part 13 that changes the initial shape IS so as to minimize the difference between the displacement, the load, a related stress or a related strain and a predetermined target value within a range where any parts of the initial shape IS deforms elastically.

摘要翻译： 最佳设计支撑系统是设计一种结构，当将负载或位移施加到预定部分时，通过使用弹性变形将一个期望的载荷或位移输出到一个部分。 更具体地说，最佳设计支持系统包括结构创建部分11，其通过改变设计域D内的材料布局，将结构FM创建为多个相互不同类型元素的集成结构，从而最小化输出 一个初始形状设定部分12，其形成对应于形成结构FM的每个元件的功能的可行的初始形状IS;以及形状变化部分， 13，其使初始形状IS变化，以使得初始形状的任何部分的弹性变形的范围内的位移，负载，相关应力或相关应变与预定目标值之间的差最小化。

公开(公告)号：US20070204295A1

公开(公告)日：2007-08-30

申请号：US11709244

申请日：2007-02-22

申请人： Masakazu Kobayashi ,  Ryouichi Morishita ,  Atsushi Kakiuchi

发明人： Masakazu Kobayashi ,  Ryouichi Morishita ,  Atsushi Kakiuchi

IPC分类号： H04N5/445

CPC分类号： H04N5/45 ,  H04N5/4401 ,  H04N5/44543 ,  H04N7/163 ,  H04N21/4402 ,  H04N21/45455 ,  H04N21/478 ,  H04N21/812

摘要： Disclosed herein is a digital broadcast receiver capable of performing synthesis on a commercial that a user desires. If the commercial satisfies the Jth condition, a synthesis unit reads image data assigned to the Jth condition from a storage unit. Further, if a sync signal has been detected, the synthesis unit synthesizes an image represented by the image data read from the storage unit with video represented by a video signal outputted from a decoder, and outputs the synthesized data.

摘要翻译： 本文公开了一种数字广播接收机，其能够对用户期望的广告进行合成。 如果广告满足第j个条件，则合成单元从存储单元读取分配给第j个条件的图像数据。 此外，如果已经检测到同步信号，则合成单元将从由存储单元读取的图像数据表示的图像合成为由从解码器输出的视频信号表示的视频，并输出合成数据。

公开(公告)号：US20050025769A1

公开(公告)日：2005-02-03

申请号：US10931997

申请日：2004-09-02

申请人： Masakazu Kobayashi ,  Hongsi Jiang ,  Xiu-Fen Yang

发明人： Masakazu Kobayashi ,  Hongsi Jiang ,  Xiu-Fen Yang

IPC分类号： A61K38/13 ,  A61K39/395

CPC分类号： A61K38/13 ,  A61K39/3955 ,  A61K2300/00

摘要： The present invention provides a method of suppressing ongoing acute allograft rejection. In one embodiment, the method comprises administering to a host experiencing ongoing acute allograft rejection an IL10 inhibitor and an IL2 inhibitor in amounts effective to rescue the allograft from ongoing acute rejection. In another embodiment, the method comprises administering to a host experiencing ongoing acute allograft rejection, which is due to insufficient immunosuppression by an IL2 inhibitor, an IL10 inhibitor in an amount effective to rescue the allograft from ongoing acute rejection.

摘要翻译： 本发明提供抑制正在进行的急性同种异体移植排斥的方法。 在一个实施方案中，所述方法包括向经历正在进行的急性同种异体移植物排斥反应的宿主施用有效拯救同种异体移植物以进行急性排斥反应的IL10抑制剂和IL2抑制剂。 在另一个实施方案中，所述方法包括向经历正在进行的急性同种异体移植物排斥反应的宿主施用，其由于IL2抑制剂的免疫抑制不足，以有效拯救同种异体移植物的持续急性排斥反应的量的IL10抑制剂。

公开(公告)号：US06707180B2

公开(公告)日：2004-03-16

申请号：US10322723

申请日：2002-12-19

申请人： Noboru Hattori ,  Masakazu Kobayashi

发明人： Noboru Hattori ,  Masakazu Kobayashi

IPC分类号： H02K906

CPC分类号： H02K1/32 ,  H02K1/276 ,  H02K9/06 ,  H02K9/19

摘要： A coolant inlet and a coolant outlet are opened on an inner surface enclosing an inner space of a rotation object. The coolant inlet and the coolant outlet are located on a rotation axis and face each other. A main-stream which flows straightly along the rotation axis from the coolant inlet to the coolant outlet is generated in a central space of the inner space. Therefore, a resistance about the coolant stream is small. In addition, a sub-stream which circulates in a radial direction is generated in a peripheral space around the central space. By generating a contact between the main-stream and the sub-stream, it is possible to obtain high performance of cooling.

摘要翻译： 冷却剂入口和冷却剂出口在包围旋转物体的内部空间的内表面上打开。 冷却剂入口和冷却剂出口位于旋转轴线上且彼此面对。 在内部空间的中心空间中产生沿着旋转轴线从冷却剂入口直接流到冷却剂出口的主流。 因此，关于冷却剂流的电阻很小。 此外，在中心空间周围的周边空间中产生沿径向循环的子流。 通过在主流和副流之间产生接触，可以获得高性能的冷却。

公开(公告)号：US06416930B2

公开(公告)日：2002-07-09

申请号：US09799554

申请日：2001-03-07

申请人： Kazumasa Wakiya ,  Naotaka Kubota ,  Shigeru Yokoi ,  Masakazu Kobayashi

发明人： Kazumasa Wakiya ,  Naotaka Kubota ,  Shigeru Yokoi ,  Masakazu Kobayashi

IPC分类号： G03F711

CPC分类号： G03F7/091

摘要： A composition includes a copolymer of vinylimidazole with a water-soluble film-forming monomer other than vinylimidazole, and a fluorine-containing surfactant. A resist laminate is obtained by forming an anti-reflection coating on the surface of a photoresist film, which anti-refection coating is composed of a coating solution obtained by dissolving the composition in water. The composition for lithographic anti-reflection coating has balanced compatibility with conventional photoresist compositions. By using the composition, a semiconductor device can be efficiently produced without the clogging of waste fluids in a waste fluid pipe, even when the application of the photoresist composition and the formation of the anti-reflection coating are sequentially performed using one coater. This composition is also advantageous for saving space in a clean room.

摘要翻译： 组合物包括乙烯基咪唑与乙烯基咪唑以外的水溶性成膜单体的共聚物和含氟表面活性剂。 通过在光致抗蚀剂膜的表面上形成抗反射涂层来获得抗蚀层叠体，该抗反射涂层由通过将该组合物溶解在水中得到的涂布溶液组成。 用于光刻抗反射涂层的组合物与常规光致抗蚀剂组合物具有平衡的相容性。 通过使用该组合物，即使当使用一个涂布机顺序地进行光致抗蚀剂组合物的施加和防反射涂层的形成时，也可以有效地制造半导体装置而不会在废流体管道中堵塞废流体。 这种组合物也有利于节省洁净室中的空间。

公开(公告)号：US06319815B1

公开(公告)日：2001-11-20

申请号：US09419951

申请日：1999-10-18

申请人： Etsuko Iguchi ,  Masakazu Kobayashi ,  Yasumitsu Taira

发明人： Etsuko Iguchi ,  Masakazu Kobayashi ,  Yasumitsu Taira

IPC分类号： H01L214763

CPC分类号： H01L21/76808 ,  H01L21/76801

摘要： A method for forming a wiring structure on a semiconductor substrate, comprising the following steps: a step for forming a low dielectric constant dielectric film and an etching stopper, sequentially, on said semiconductor substrate; a step for forming a resist mask having a pattern for forming via-holes on the etching stopper film; a step for forming via-holes on the low dielectric constant dielectric film through said resist mask; a step for filling said via-holes with an embedding material and for heating the embedding material to harden; a step for maintaining the embedding material at a predetermined thickness on the bottoms of the via-holes by performing etching back on the embedding material being heated to be harden; a step for forming a resist mask having a pattern for forming trench holes on said etching stopper film; a step for forming the trench holes on said low dielectric film constant dielectric through said resist mask, while removing the embedding material remaining on the bottoms of said via-holes; and a step for embedding metal into said trench holes and said via-holes, wherein the embedding material mainly includes a thermo-bridge forming compound therein, thereby generating no bubbles even when said embedding material is being filled into gutters having a large aspect ratio thereof.

摘要翻译： 一种在半导体衬底上形成布线结构的方法，包括以下步骤：在所述半导体衬底上依次形成低介电常数介电膜和蚀刻阻挡层的步骤; 用于形成具有用于在蚀刻停止膜上形成通孔的图案的抗蚀剂掩模的步骤; 通过所述抗蚀剂掩模在所述低介电常数介电膜上形成通孔的步骤; 用嵌入材料填充所述通孔并加热所述嵌入材料以硬化的步骤; 通过对被加热的硬化的嵌入材料进行蚀刻，将通孔的底部的嵌入材料保持在预定厚度的步骤; 在所述蚀刻阻挡膜上形成具有用于形成沟槽的图案的抗蚀剂掩模的步骤; 通过所述抗蚀剂掩模在所述低电介质膜恒定电介质上形成沟槽的步骤，同时去除残留在所述通孔的底部上的包埋材料; 以及将金属嵌入所述沟槽和所述通孔的步骤，其中所述嵌入材料主要包括其中的热电桥形成化合物，即使当所述嵌入材料被填充到具有大纵横比的沟槽中时也不产生气泡 。

公开(公告)号：US06315827B1

公开(公告)日：2001-11-13

申请号：US09410723

申请日：1999-09-30

申请人： Shoei Kurosaka ,  Junsuke Tomioka ,  Masakazu Kobayashi ,  Kazuhiro Mimura ,  Kenji Okamura ,  Hiroshi Monden ,  Naritoshi Ohtsukasa ,  Hiroshi Yoshinada

发明人： Shoei Kurosaka ,  Junsuke Tomioka ,  Masakazu Kobayashi ,  Kazuhiro Mimura ,  Kenji Okamura ,  Hiroshi Monden ,  Naritoshi Ohtsukasa ,  Hiroshi Yoshinada

IPC分类号： C30B1530

CPC分类号： C30B15/30 ,  Y10S117/911 ,  Y10T117/1032 ,  Y10T117/1072

摘要： There is described an apparatus for producing a single crystal ingot capable of stably manufacturing a single crystal ingot by means of the Czochralski method, without being affected by influence of variation in extension of wires or an offset in points clamped by a clamping member. The clamping member is engaged with an engagement step formed in a single crystal which is being pulled by the CZ method, and the single crystal is pulled. The single crystal ingot manufacturing apparatus is provided with a flexible mechanism for absorbing variation in extension of the wires, in intermediate portions of the wires. Variation in extension of the wires is eliminated by means of the flexible mechanism, thereby retaining the single crystal in an upright position. Further, a sacrifice member which deforms so as to conform to the circumference of the engagement step is interposed between the clamping member and the engagement step, thereby preventing occurrence of cracking or deformation in the single crystal.

摘要翻译： 描述了一种用于生产能够通过切克劳斯基法（Czochralski）方法稳定地制造单晶锭的单晶锭的装置，而不受电线延伸的影响或由夹紧件夹紧的点的偏移的影响。 夹持构件与通过CZ方法拉制的单晶中形成的接合台阶接合，并且单晶被拉动。 单晶锭制造装置在电线的中间部分设置有用于吸收电线延伸变化的柔性机构。 通过柔性机构消除了电线延伸的变化，从而将单晶保持在直立位置。 此外，在夹紧构件和接合步骤之间插入有变形以使其与接合台阶的圆周相适应的牺牲构件，从而防止单晶中的开裂或变形。

公开(公告)号：US06225034B1

公开(公告)日：2001-05-01

申请号：US09173005

申请日：1998-10-15

申请人： Masahito Tanabe ,  Kazumasa Wakiya ,  Masakazu Kobayashi ,  Toshimasa Nakayama

发明人： Masahito Tanabe ,  Kazumasa Wakiya ,  Masakazu Kobayashi ,  Toshimasa Nakayama

IPC分类号： G03F742

CPC分类号： G03F7/425

摘要： The present invention relates to photoresist stripping liquid compositions comprising (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 25-40 wt % of at least one member selected from monoethanolamine and diethanolamine, (d) 20-32 wt % of dimethyl sulfoxide and (e) 2-20 wt % of an aromatic hydroxy compound and a method of stripping photoresists with the use of the same. The present invention provides photoresist stripping liquid compositions which are, even at higher treating temperatures, excellent in the capabilities of both stripping photoresist films and modified films and effective in prevention of the corrosion that would otherwise occur in substrates overlaid with Al or Al alloy layers or Ti layers, and a method for stripping photoresists by using the same.

公开(公告)号：US06218087B1

公开(公告)日：2001-04-17

申请号：US09588557

申请日：2000-06-07

申请人： Masahito Tanabe ,  Kazumasa Wakiya ,  Masakazu Kobayashi

发明人： Masahito Tanabe ,  Kazumasa Wakiya ,  Masakazu Kobayashi

IPC分类号： G03F732

CPC分类号： G03F7/422 ,  G03F7/425 ,  G03F7/426

摘要： There is disclosed a photoresist stripping liquid composition of which the CIE 1976 L*a*b* color difference (&Dgr;E*ab) specified in JIS (=Japanese Industrial Standard) Z 8730 is 30-180 (as referenced to pure water). The composition is excellent not only in stripping photoresist layers and the deposition (residue) that occurs after the etching or ashing step but also in protecting substrates from corrosion even if they have metallic, inorganic or like films formed on them. An improved method of stripping photoresists using the composition is also disclosed.

摘要翻译： 公开了JIS（日本工业标准）Z 8730中规定的CIE 1976 L * a * b *色差（DELTAE * ab）为30-180（参照纯水）的光致抗蚀剂剥离液组合物。 该组合物不仅在剥离光致抗蚀剂层以及在蚀刻或灰化步骤之后发生的沉积（残余物）而且在保护基底免受腐蚀的同时也是优异的，即使它们具有形成在其上的金属，无机或类似的膜。 还公开了使用该组合物剥离光致抗蚀剂的改进方法。