SOLAR CELL AND MANUFACTURING METHOD THEREOF
    41.
    发明申请
    SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
    太阳能电池及其制造方法

    公开(公告)号:US20130104974A1

    公开(公告)日:2013-05-02

    申请号:US13620475

    申请日:2012-09-14

    IPC分类号: H01L31/0216

    摘要: A solar cell includes a silicon substrate including a front surface for receiving light, and a rear surface opposite the front surface, an emitter diffusion region on the rear surface and doped with a first polarity that is opposite to a polarity of the silicon substrate, a base diffusion region on the rear surface of the substrate and doped with a second polarity that is the same as the polarity of the silicon substrate, and an insulation gap between the emitter diffusion region and the base diffusion region, wherein the base diffusion region has a closed polygonal shape, and wherein the insulation gap is adjacent the base diffusion region.

    摘要翻译: 太阳能电池包括:硅基板,包括用于接收光的前表面和与前表面相对的后表面,在后表面上的发射极扩散区域,并掺杂有与硅基板的极性相反的第一极性; 基底扩散区域,并且掺杂有与硅衬底的极性相同的第二极性,以及发射极扩散区域和基极扩散区域之间的绝缘间隙,其中,基极扩散区域具有 闭合的多边形形状,并且其中绝缘间隙与基底扩散区相邻。

    Method for manufacturing a solar cell
    42.
    发明授权
    Method for manufacturing a solar cell 失效
    制造太阳能电池的方法

    公开(公告)号:US08269258B2

    公开(公告)日:2012-09-18

    申请号:US13335711

    申请日:2011-12-22

    IPC分类号: H01L31/0328

    摘要: A method for manufacturing a solar cell comprises disposing a first doping layer on a substrate, forming a first doping layer pattern by patterning the first doping layer to expose a portion of the substrate, disposing a second doping layer on the first doping layer pattern to cover the exposed portion of the substrate, diffusing an impurity from the first doping layer pattern which forms a first doping region in a surface of the substrate, and diffusing an impurity from the second doping layer which forms a second doping region in the surface of the substrate, wherein the forming of the first doping layer pattern uses an etching paste.

    摘要翻译: 一种制造太阳能电池的方法包括在衬底上设置第一掺杂层,通过图案化第一掺杂层以暴露衬底的一部分形成第一掺杂层图案,在第一掺杂层图案上设置第二掺杂层以覆盖 衬底的暴露部分,从衬底的表面中形成第一掺杂区的第一掺杂层图案扩散杂质,并在衬底的表面中扩散来自形成第二掺杂区的第二掺杂层的杂质 其中,所述第一掺杂层图案的形成使用蚀刻膏。

    METHOD FOR MANUFACTURING A SOLAR CELL

    公开(公告)号:US20120094426A1

    公开(公告)日:2012-04-19

    申请号:US13335707

    申请日:2011-12-22

    IPC分类号: H01L21/225

    摘要: A method for manufacturing a solar cell comprises disposing a first doping layer on a substrate, forming a first doping layer pattern by patterning the first doping layer to expose a portion of the substrate, disposing a second doping layer on the first doping layer pattern to cover the exposed portion of the substrate, diffusing an impurity from the first doping layer pattern which forms a first doping region in a surface of the substrate, and diffusing an impurity from the second doping layer which forms a second doping region in the surface of the substrate, wherein the forming of the first doping layer pattern uses an etching paste.

    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    44.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号:US20120012173A1

    公开(公告)日:2012-01-19

    申请号:US13028697

    申请日:2011-02-16

    IPC分类号: H01L31/0224 H01L31/18

    摘要: A method for manufacturing a solar cell includes disposing a first doping layer on a substrate, disposing a diffusion preventing layer on the first doping layer, patterning the first doping layer and the diffusion preventing layer to expose a portion of the substrate, forming a second doping layer which is disposed on the exposed portion of the substrate on the diffusion preventing layer, diffusing an impurity from the first doping layer to form a first doping region in a surface of the substrate and diffusing an impurity from the second doping layer to form a second doping region in the surface of the substrate surface, wherein the exposed portion of the substrate formed by patterning the first doping layer and the diffusion preventing layer and a portion of the remaining first doping layer and the diffusion preventing layer which are not patterned are alternately arranged with a lattice shape, and the first doping region and the second doping region are alternately arranged with the lattice shape.

    摘要翻译: 一种制造太阳能电池的方法包括在基板上设置第一掺杂层,在第一掺杂层上设置扩散防止层,对第一掺杂层和扩散防止层进行图案化,以暴露基板的一部分,形成第二掺杂 层,其设置在所述扩散防止层上的所述衬底的所述暴露部分上,从所述第一掺杂层扩散杂质以在所述衬底的表面中形成第一掺杂区域,并使所述第二掺杂层扩散杂质,以形成第二掺杂层 掺杂区域,其中通过图案化第一掺杂层和扩散防止层形成的衬底的暴露部分以及未图案化的剩余的第一掺杂层和扩散防止层的一部分交替布置 具有晶格形状,并且第一掺杂区域和第二掺杂区域与第一掺杂区域和第二掺杂区域交替排列 晶格形状。

    METHOD FOR MANUFACTURING SOLAR CELL
    45.
    发明申请
    METHOD FOR MANUFACTURING SOLAR CELL 失效
    制造太阳能电池的方法

    公开(公告)号:US20110306164A1

    公开(公告)日:2011-12-15

    申请号:US12893944

    申请日:2010-09-29

    IPC分类号: H01L31/0352

    摘要: A method for manufacturing a solar cell according to an exemplary embodiment includes: forming a first doping film on a substrate; patterning the first doping film so as to form a first doping film pattern and so as to expose a portion of the substrate; forming a diffusion prevention film on the first doping film pattern so as to cover the exposed portion of the substrate; etching the diffusion prevention film so as to form spacers on lateral surfaces of the first doping film pattern; forming a second doping film on the first doping film pattern so as to cover the spacer and exposed substrate; forming a first doping region on the substrate surface by diffusing an impurity from the first doping film pattern into the substrate; and forming a second doping region on the substrate surface by diffusing an impurity from the second doping film pattern into the substrate.

    摘要翻译: 根据示例性实施例的太阳能电池的制造方法包括:在基板上形成第一掺杂膜; 图案化第一掺杂膜以形成第一掺杂膜图案并且暴露基板的一部分; 在所述第一掺杂膜图案上形成扩散防止膜以覆盖所述基板的所述暴露部分; 蚀刻扩散防止膜,以在第一掺杂膜图案的侧表面上形成间隔物; 在所述第一掺杂膜图案上形成第二掺杂膜以覆盖所述间隔物和暴露的基板; 通过将杂质从第一掺杂膜图案扩散到衬底中而在衬底表面上形成第一掺杂区; 以及通过将杂质从所述第二掺杂膜图案扩散到所述衬底中而在所述衬底表面上形成第二掺杂区域。

    Backlight unit and liquid crystal display device module including the same
    49.
    发明申请
    Backlight unit and liquid crystal display device module including the same 有权
    背光单元和包括其的液晶显示装置模块

    公开(公告)号:US20100245704A1

    公开(公告)日:2010-09-30

    申请号:US12591554

    申请日:2009-11-23

    IPC分类号: G02F1/1333 G09F13/04

    摘要: A backlight unit includes a plurality of light emitting diodes as a light source; a board having a rectangular shape and including a plurality of metal lines each extending along a first direction, wherein the plurality of light emitting diodes are arranged on the board and respectively connected to the plurality of metal lines; a pad portion attached on a side, which is parallel to the first direction, of the board and including first to Nth pads respectively connected to the plurality of metal lines, wherein N is a positive integer; a driving circuit connected to the first to Nth pads and providing a driving signal into the plurality of light emitting diodes; and an optical member at a side of the light emitting diodes and for improving a light property.

    摘要翻译: 背光单元包括作为光源的多个发光二极管; 具有矩形形状并且包括沿着第一方向延伸的多条金属线的板,其中所述多个发光二极管布置在所述板上并分别连接到所述多个金属线; 安装在板的与第一方向平行的一侧的焊盘部分,并且包括分别连接到多个金属线的第一至第N焊盘,其中N是正整数; 驱动电路,连接到第一至第N个焊盘,并向多个发光二极管提供驱动信号; 以及在发光二极管的一侧的光学构件,并且用于改善光特性。

    Catalyst for preparation of pentafluoroethane and preparation method thereof
    50.
    发明授权
    Catalyst for preparation of pentafluoroethane and preparation method thereof 有权
    五氟乙烷制备催化剂及其制备方法

    公开(公告)号:US07232789B2

    公开(公告)日:2007-06-19

    申请号:US11288486

    申请日:2005-11-30

    IPC分类号: B01J23/00

    摘要: The method of preparing a chromium oxide catalyst for preparation of pentafluoroethane using a chloroethane compound includes heat treating chromium hydroxide powder at a temperature not higher than 300° C. to obtain chromium oxide powder, heat treating metal hydroxide, at a temperature not higher than 300° C. to obtain metal oxide powder, mixing 85˜99.5 wt % of the chromium oxide powder with 0.5˜15 wt % of the metal oxide powder to obtain a mixture, forming the mixture into a pellet, calcining the pellet at 200-300° C. using nitrogen gas, and fluorinating the pellet at 300-320° C. using a gas mixture including N2 and HF, and then at 320-380° C. using HF gas. The fluorination catalyst prepared using the method of this invention can be effectively used to prepare pentafluoroethane at a high yield using a chloroethane compound.

    摘要翻译: 使用氯乙烷化合物制备五氟乙烷的氧化铬催化剂的方法包括在不高于300℃的温度下热处理氢氧化铬粉末,得到不高于300℃的氧化铬粉末,热处理金属氢氧化物 ℃,得到金属氧化物粉末,将85〜99.5重量%的氧化铬粉末与0.5〜15重量%的金属氧化物粉末混合,得到混合物,将混合物形成颗粒,在200-300℃下煅烧沉淀 ℃,并使用包含N 2 H 2和HF的气体混合物,然后在320-380℃下使用HF气体在300-320℃氟化颗粒。 使用本发明的方法制备的氟化催化剂可以有效地用于使用氯乙烷化合物以高产率制备五氟乙烷。