SEMICONDUCTOR PACKAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20190013284A1

    公开(公告)日:2019-01-10

    申请号:US15642005

    申请日:2017-07-05

    Abstract: A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.

    SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20220199538A1

    公开(公告)日:2022-06-23

    申请号:US17125848

    申请日:2020-12-17

    Inventor: Wen-Long LU

    Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a lower conductive structure, a first semiconductor device and a second semiconductor device. The upper conductive structure is disposed on the lower conductive structure. The second semiconductor device is electrically connected to the first semiconductor device by a first path in the upper conductive structure. The lower conductive structure is electrically connected to the first semiconductor device through a second path in the upper conductive structure under the first path.

    WIRING STRUCTURE, ASSEMBLY STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20210175164A1

    公开(公告)日:2021-06-10

    申请号:US16709641

    申请日:2019-12-10

    Inventor: Wen-Long LU

    Abstract: A wiring structure includes a first dielectric layer, a first circuit layer, a second dielectric layer and a conductive via. The first dielectric layer defines at least one through hole. The first circuit layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer to cover the first circuit layer, wherein a first portion of the second dielectric layer is disposed in the through hole of the first dielectric layer. The conductive via extends through the first portion of the second dielectric layer in the through hole of the first dielectric layer, and is electrically isolated from the first circuit layer.

    SEMICONDUCTOR ASSEMBLY AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20210104810A1

    公开(公告)日:2021-04-08

    申请号:US16592550

    申请日:2019-10-03

    Inventor: Wen-Long LU

    Abstract: A semiconductor assembly includes a first wiring structure, a first semiconductor die and a first electronic element. The first wiring structure has a first surface. The first semiconductor die is disposed on the first surface of the first wiring structure. The first electronic element is electrically connected to the first wiring structure. The first electronic element includes a first metal layer, a second metal layer and a dielectric material interposed between the first metal layer and the second metal layer. The first metal layer and the second metal layer are substantially perpendicular to the first surface of the first wiring structure.

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