Support plate
    41.
    发明申请
    Support plate 审中-公开
    支撑板

    公开(公告)号:US20090197070A1

    公开(公告)日:2009-08-06

    申请号:US12322093

    申请日:2009-01-29

    申请人: Atsushi Miyanari

    发明人: Atsushi Miyanari

    IPC分类号: B32B5/18

    摘要: The present invention provides a support plate (1) that bonds to a substrate (2) so as to support the substrate (2). In the support plate (1), a plurality of openings (15) and (15′) penetrate through from a bonding surface to a non-bonding surface, the bonding surface facing the substrate (2), and the non-bonding surface facing the bonding surface; a porous region (13), which includes a first region (11) and a second region (12) surrounding the first region, is formed on the bonding surface; and the first region (11) has an opening ratio greater than that of the second region (12). By this, it is possible to realize a support plate that can be easily peeled off from a semiconductor wafer with a solvent, but does not easily come off from a substrate during a processing operation on the semiconductor wafer.

    摘要翻译: 本发明提供一种与基板(2)结合以支撑基板(2)的支撑板(1)。 在支撑板(1)中,多个开口(15)和(15')从接合表面穿透到非接合表面,接合表面面向基板(2),并且非接合表面面向 接合面; 在所述接合表面上形成包括第一区域(11)和围绕所述第一区域的第二区域(12)的多孔区域(13) 并且所述第一区域(11)的开口率大于所述第二区域(12)的开口率。 由此,可以实现利用溶剂容易地从半导体晶片剥离的支撑板,但是在半导体晶片的处理动作中不易从基板脱落。

    Substrate supporting plate and stripping method for supporting plate
    42.
    发明申请
    Substrate supporting plate and stripping method for supporting plate 有权
    基板支撑板和支撑板剥离方法

    公开(公告)号:US20050173064A1

    公开(公告)日:2005-08-11

    申请号:US11001574

    申请日:2004-12-01

    申请人: Atsushi Miyanari

    发明人: Atsushi Miyanari

    摘要: There is provided a supporting plate having a structure in which a solvent can be supplied to an adhesive layer between the supporting plate and a substrate such as a semiconductor wafer in a short period of time after the substrate is thinned, and also a method for stripping the supporting plate. The supporting plate may have a larger diameter than the semiconductor wafer, and penetrating holes are formed in the supporting plate. The outer peripheral portion of the supporting plate is a flat portion in which no penetrating hole is formed. When alcohol is poured from above the supporting plate, the alcohol reaches the adhesive layer through the penetrating holes, dissolves and removes the adhesive layer.

    摘要翻译: 提供了一种支撑板,其具有这样的结构,其中在基板变薄之后,在短时间内可以将溶剂供应到支撑板和诸如半导体晶片的基板之间的粘合剂层,以及剥离方法 支撑板。 支撑板可以具有比半导体晶片更大的直径,并且在支撑板中形成穿透孔。 支撑板的外周部是没有形成贯通孔的平坦部。 当从支撑板上方注入醇时,醇通过穿透孔到达粘合剂层,溶解并除去粘合剂层。

    Substrate supporting plate and stripping method for supporting plate
    43.
    发明授权
    Substrate supporting plate and stripping method for supporting plate 有权
    基板支撑板和支撑板剥离方法

    公开(公告)号:US07211168B2

    公开(公告)日:2007-05-01

    申请号:US11001574

    申请日:2004-12-01

    申请人: Atsushi Miyanari

    发明人: Atsushi Miyanari

    IPC分类号: B32B38/10

    摘要: There is provided a supporting plate having a structure in which a solvent can be supplied to an adhesive layer between the supporting plate and a substrate such as a semiconductor wafer in a short period of time after the substrate is thinned, and also a method for stripping the supporting plate.The supporting plate may have a larger diameter than the semiconductor wafer, and penetrating holes are formed in the supporting plate. The outer peripheral portion of the supporting plate is a flat portion in which no penetrating hole is formed. When alcohol is poured from above the supporting plate, the alcohol reaches the adhesive layer through the penetrating holes, dissolves and removes the adhesive layer.

    摘要翻译: 提供了一种支撑板,其具有这样的结构,其中在基板变薄之后,在短时间内可以将溶剂供应到支撑板和诸如半导体晶片的基板之间的粘合剂层,以及剥离方法 支撑板。 支撑板可以具有比半导体晶片更大的直径,并且在支撑板中形成穿透孔。 支撑板的外周部是没有形成贯通孔的平坦部。 当从支撑板上方注入醇时,醇通过穿透孔到达粘合剂层,溶解并除去粘合剂层。

    Retention device and retention method
    44.
    发明授权
    Retention device and retention method 有权
    保留装置和保留方法

    公开(公告)号:US09406542B2

    公开(公告)日:2016-08-02

    申请号:US14125537

    申请日:2012-05-25

    申请人: Atsushi Miyanari

    发明人: Atsushi Miyanari

    摘要: A holding device including a first sucking section for sucking a wafer (substrate) from a side on which a dicing tape (supporting film) is adhered; a structure that supports a dicing frame (frame part) and covers a first region which (i) is on a surface of the dicing tape to which surface the wafer is not adhered and (ii) is between the wafer and the dicing frame; and a second sucking section for sealing a boundary between the structure and at least one of the dicing frame and the first region.

    摘要翻译: 一种保持装置,包括:第一吸引部,其从附着有切割带(支撑膜)的一侧吸取晶片(基板); 支撑切割框架(框架部分)并且覆盖第一区域的结构,(i)在晶片未粘附表面的切割带的表面上,以及(ii)在晶片和切割框之间; 以及用于密封结构与切割框架和第一区域中的至少一个之间的边界的第二抽吸部分。

    Method for processing process-target object
    45.
    发明授权
    Method for processing process-target object 有权
    处理过程目标对象的方法

    公开(公告)号:US08882930B2

    公开(公告)日:2014-11-11

    申请号:US13151624

    申请日:2011-06-02

    申请人: Atsushi Miyanari

    发明人: Atsushi Miyanari

    IPC分类号: B08B7/00 H01L21/02

    CPC分类号: H01L21/02076

    摘要: Provided is a method including the steps of: carrying out a storage process by causing a processing jig, which has a supply opening for supplying a first processing liquid, to be positioned such that a storage space section into which the supply opening is open is sandwiched by the processing jig and the process-target surface, and by storing the first processing liquid in the storage space section; and carrying out a rotation process by supplying the first processing liquid onto the process-target surface from the supply opening, while supplying a second processing liquid onto the outer peripheral part, in a state where the process-target object is being rotated, in the step for carrying out the rotation process, the processing jig being moved along a direction which is not a direction along which the process-target object is being rotated.

    摘要翻译: 提供了一种方法,包括以下步骤:通过使具有用于供应第一处理液的供给开口的处理夹具被定位成使得供应开口打开的存储空间部分被夹持而进行存储处理 通过加工夹具和加工对象表面,并且将第一处理液体储存在存储空间部分中; 并且通过将第一处理液体从供给开口供给到处理对象面上,同时在处理对象物被旋转的状态下向第二处理液体供给第二处理液体,进行旋转处理, 执行旋转处理的步骤,处理夹具沿着不是处理对象物体旋转的方向的方向移动。

    SUBSTRATE SUPPORTING PLATE
    47.
    发明申请
    SUBSTRATE SUPPORTING PLATE 审中-公开
    基板支撑板

    公开(公告)号:US20070151674A1

    公开(公告)日:2007-07-05

    申请号:US11682754

    申请日:2007-03-06

    申请人: Atsushi Miyanari

    发明人: Atsushi Miyanari

    IPC分类号: B29C63/00

    摘要: A supporting plate having a diameter identical to or larger than a diameter of a substrate to which the supporting plate is attached. A plurality of penetrating holes is provided in a thickness direction of the supporting plate so as to allow a solvent, such as alcohol, to pass therethrough. A diameter of the penetrating holes is approximately in a range of 0.3-0.5 mm, and a pitch of the penetrating holes is approximately in a range of 0.5-1.0 mm. The supporting plate comprises a low thermal expansion material—such as glass, ceramic or an alloy of nickel and iron—which has a thermal expansion coefficient less than that of the substrate.

    摘要翻译: 支撑板,其直径等于或大于支撑板所附接的基板的直径。 在支撑板的厚度方向上设置多个贯通孔,以使诸如酒精之类的溶剂通过。 贯通孔的直径大致在0.3〜0.5mm的范围内,贯通孔的间距大致在0.5〜1.0mm的范围内。 支撑板包括热膨胀系数低于基板的热膨胀系数的低热膨胀材料,例如玻璃,陶瓷或镍和铁的合金。