公开(公告)号：US20090197581A1

公开(公告)日：2009-08-06

申请号：US12026526

申请日：2008-02-05

Applicant: Arvind Gupta ,  Ashutosh Tiwari ,  Gopalakrishnan Venkatraman ,  Dominic Cheung ,  Stacy R. Bennett ,  Douglas B. Koen

Inventor： Arvind Gupta ,  Ashutosh Tiwari ,  Gopalakrishnan Venkatraman ,  Dominic Cheung ,  Stacy R. Bennett ,  Douglas B. Koen

IPC: H04M3/42

CPC classification number: G06Q30/02

Abstract: A method is disclosed for providing mobile publishers with multiple versions of an advertisement, including enabling an advertiser to create at least two different versions of an advertisement, wherein each version is formatted for display on a mobile device with a predetermined device attribute including a screen attribute, and providing a mobile publisher with the at least two versions of the advertisement for service to a plurality of mobile devices having different screen attributes, at least one of the plurality of mobile devices having a screen attribute corresponding to that of at least one of a plurality of advertisement versions.

Abstract translation: 公开了一种用于向移动发布者提供广告的多个版本的方法，包括允许广告商创建广告的至少两个不同版本，其中每个版本被格式化以在具有包括屏幕属性的预定设备属性的移动设备上显示 并且向移动发行者提供所述至少两个版本的所述广告以用于具有不同屏幕属性的多个移动设备，所述多个移动设备中的至少一个具有与至少一个 多个广告版本。

公开(公告)号：US20090008637A1

公开(公告)日：2009-01-08

申请号：US11695393

申请日：2007-04-02

Applicant: Ashutosh Tiwari ,  Michael R. Snure

Inventor： Ashutosh Tiwari ,  Michael R. Snure

IPC: H01L29/22 ,  H01L21/34 ,  H01L31/0296

CPC classification number: H01G9/204 ,  B82Y30/00 ,  C01G9/02 ,  C01P2004/03 ,  C01P2004/64 ,  C01P2006/40 ,  H01G9/2059 ,  Y02E10/542 ,  Y10S977/723 ,  Y10S977/782 ,  Y10S977/811

Abstract: The present invention provides methods of forming metal oxide semiconductor nanostructures and, in particular, zinc oxide (ZnO) semiconductor nanostructures, possessing high surface area, plant-like morphologies on a variety of substrates. Optoelectronic devices, such as photovoltaic cells, incorporating the nanostructures are also provided.

Abstract translation: 本发明提供形成金属氧化物半导体纳米结构的方法，特别是在各种基底上具有高表面积，植物样形态的氧化锌（ZnO）半导体纳米结构。 还提供了纳入纳米结构的光电器件，例如光伏电池。

公开(公告)号：US07315905B2

公开(公告)日：2008-01-01

申请号：US11034579

申请日：2005-01-13

Applicant: Subrangshu Kumar Das ,  Ashutosh Tiwari ,  Subash Chandar Govindarajan

Inventor： Subrangshu Kumar Das ,  Ashutosh Tiwari ,  Subash Chandar Govindarajan

IPC: G06F13/10 ,  G06F1/24

CPC classification number: G06F13/28 ,  G06F2213/0038

Abstract: A system-on-chip integrated circuit includes a peripheral initialization register has a bit corresponding to each module. Each bit indicates a normal mode or a reset mode for the corresponding module. A direct memory access unit can receive, prioritize and queue date movement transactions between modules and can read from or write to the peripheral initialization register. A peripheral interface unit prevents a write to the peripheral initialization register changing a module from reset mode to normal mode while there is an uncompleted data movement transaction involving that module. A false acknowledge circuit for each module supplies an acknowledge signal in response to a received command if the module is in reset mode.

Abstract translation: 片上系统集成电路包括外设初始化寄存器，其中每个模块都有一个位。 每个位表示相应模块的正常模式或复位模式。 直接存储器访问单元可以接收，优先排列和排队模块之间的日期移动事务，并且可以从外设初始化寄存器读取或向其写入。 外围接口单元防止写入外围初始化寄存器，将模块从复位模式更改为正常模式，同时存在涉及该模块的未完成数据移动事务。 如果模块处于复位模式，每个模块的错误确认电路将响应于接收到的命令提供一个确认信号。