Abstract:
The present disclosure provides a substrate comprising a printing area, wherein the printing area comprises a flat surface and a plurality of separation structures projecting from the flat surface, wherein the plurality of separation structures divide the printing area into a plurality of micro-areas, and in each of the micro-areas, a circular region containing no separation structure has a maximum diameter between 5 μm and 10 μm. The present disclosure further provides a light emitting device comprising the substrate and a method for manufacturing the substrate.
Abstract:
A substantially transparent display substrate is provided. The substantially transparent display substrate includes a base substrate; multiple insulating layers on the base substrate and in a display area of the substantially transparent display substrate; and a plurality of grooves in at least a first insulating layer of the multiple insulating layers, wherein at least one of the plurality of grooves at least partially extending into the first insulating layer. The display area includes a plurality of subpixel regions spaced apart from each other by an inter-subpixel region. A respective one of the plurality of subpixel regions includes a light emitting sub-region and a substantially transparent sub-region. At least a portion of a respective one of the plurality of grooves is about an edge of the substantially transparent sub-region of the respective one of the plurality of subpixel regions.
Abstract:
The present application discloses an organic light emitting diode display substrate having a subpixel region and an inter-subpixel region. The organic light emitting diode display substrate includes a base substrate and an auxiliary cathode on the base substrate. The auxiliary cathode includes a transparent conductive sub-layer and a metallic conductive sub-layer on a side of the transparent conductive sub-layer distal to the base substrate. The metallic conductive sub-layer is substantially in the inter-subpixel region.
Abstract:
The present application discloses a display substrate. The display substrate includes a base substrate; a plurality of thin film transistors for driving image display on the base substrate; a planarization layer on a side of the plurality of thin film transistors distal to the base substrate; and a pixel definition layer defining a plurality of subpixel regions. The display substrate includes a recess extending into the planarization layer and in an inter-subpixel region of the display substrate. The display substrate further includes a recess fill layer in the recess. The recess fill layer has a light transmittance rate lower than that of the planarization layer.
Abstract:
A method for preparing an OLED and an OLED device are provided. The method for preparing an OLED comprises forming an anode metal layer on an organic layer; forming an inorganic layer on the anode metal layer; and forming the anode metal layer into an anode layer comprising a pattern of an anode.
Abstract:
Embodiments of the present invention relates to a thin film transistor and a method for manufacturing the same, a display substrate and a display device. The thin film transistor comprises an active layer, a source electrode, a drain electrode and an ohmic contact layer, wherein the ohmic contact layer is disposed between the active layer and the source electrode and/or between the active layer and the drain electrode to improve an ohmic contact property of the active layer with the source electrode and/or the drain electrode. The present invention solves the problem of poor ohmic contact effect between the active layer and the source and drain electrodes in the existing thin film transistor, thereby improving the ohmic contact property of the active layer with the source and drain electrodes and meanwhile improving display effect of images of a display.
Abstract:
A thin film transistor (TFT) and manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor comprises a substrate; an active layer formed on the substrate; a first conductive contact layer and a second conductive contact layer formed on the active layer; an etch-stop layer formed over the first contact layer and the second contact layer; and a source connected with the first contact layer, a drain connected with the second contact layer and a gate arranged between the source and the drain formed over the etch-stop layer. The TFT has a simple structure and better performance.