Display substrate, display apparatus, and method of fabricating display substrate

    公开(公告)号:US11018209B2

    公开(公告)日:2021-05-25

    申请号:US15774921

    申请日:2017-11-02

    Abstract: The present application discloses a display substrate. The display substrate includes a base substrate; a plurality of thin film transistors for driving image display on the base substrate; a planarization layer on a side of the plurality of thin film transistors distal to the base substrate; and a pixel definition layer defining a plurality of subpixel regions. The display substrate includes a recess extending into the planarization layer and in an inter-subpixel region of the display substrate. The display substrate further includes a recess fill layer in the recess. The recess fill layer has a light transmittance rate lower than that of the planarization layer.

    FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, DISPLAY SUBSTRATE AND DISPLAY DEVICE
    46.
    发明申请
    FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, DISPLAY SUBSTRATE AND DISPLAY DEVICE 有权
    薄膜晶体管及其制造方法,显示基板和显示装置

    公开(公告)号:US20170047451A1

    公开(公告)日:2017-02-16

    申请号:US15307362

    申请日:2015-02-27

    Abstract: Embodiments of the present invention relates to a thin film transistor and a method for manufacturing the same, a display substrate and a display device. The thin film transistor comprises an active layer, a source electrode, a drain electrode and an ohmic contact layer, wherein the ohmic contact layer is disposed between the active layer and the source electrode and/or between the active layer and the drain electrode to improve an ohmic contact property of the active layer with the source electrode and/or the drain electrode. The present invention solves the problem of poor ohmic contact effect between the active layer and the source and drain electrodes in the existing thin film transistor, thereby improving the ohmic contact property of the active layer with the source and drain electrodes and meanwhile improving display effect of images of a display.

    Abstract translation: 本发明的实施例涉及薄膜晶体管及其制造方法,显示基板和显示装置。 薄膜晶体管包括有源层,源电极,漏电极和欧姆接触层,其中欧姆接触层设置在有源层和源电极之间和/或有源层和漏电极之间以改善 有源层与源电极和/或漏电极的欧姆接触特性。 本发明解决了现有的薄膜晶体管中的有源层与源极和漏极之间的欧姆接触效应差的问题,从而提高了有源层与源极和漏极的欧姆接触性能,同时提高了显示效果 显示器的图像。

    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE
    47.
    发明申请
    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE 有权
    薄膜晶体管及其制造方法,阵列基板和显示器件

    公开(公告)号:US20150214373A1

    公开(公告)日:2015-07-30

    申请号:US14348763

    申请日:2013-07-15

    Abstract: A thin film transistor (TFT) and manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor comprises a substrate; an active layer formed on the substrate; a first conductive contact layer and a second conductive contact layer formed on the active layer; an etch-stop layer formed over the first contact layer and the second contact layer; and a source connected with the first contact layer, a drain connected with the second contact layer and a gate arranged between the source and the drain formed over the etch-stop layer. The TFT has a simple structure and better performance.

    Abstract translation: 提供薄膜晶体管(TFT)及其制造方法,阵列基板和显示装置。 薄膜晶体管包括基板; 形成在所述基板上的有源层; 第一导电接触层和形成在有源层上的第二导电接触层; 形成在所述第一接触层和所述第二接触层上的蚀刻停止层; 以及与第一接触层连接的源极,与第二接触层连接的漏极和布置在蚀刻停止层上形成的源极和漏极之间的栅极。 TFT具有结构简单,性能更好的特点。

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