公开(公告)号：US10510779B2

公开(公告)日：2019-12-17

申请号：US15321812

申请日：2016-03-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chunsheng Jiang

IPC: H01L27/12 ,  H01L29/45 ,  H01L21/321 ,  H01L29/786

Abstract: The present disclose provides in some embodiments an array substrate and a method for fabricating the same, and a display device. The array substrate includes a source-drain metal layer formed on a base substrate and including copper, an alloy layer formed on the source-drain metal layer and including copper alloy, non-copper metal in the copper alloy being easier to be oxidized than copper in the copper alloy, a passivation layer formed on the alloy layer, and an oxide layer formed between the alloy layer and the passivation layer.

公开(公告)号：US09899532B2

公开(公告)日：2018-02-20

申请号：US14785816

申请日：2015-06-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chunsheng Jiang ,  Xuyuan Li ,  Wei Liu

IPC: H01L31/18 ,  H01L31/0296 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/51 ,  H01L29/417 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/786

Abstract: A thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display apparatus are provided. The method for manufacturing the TFT includes: forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate; the forming the metal oxide semiconductor active layer includes: forming the metal oxide semiconductor active layer by electrochemical reaction. The method for manufacturing the TFT is applied in the production of the TFT and the array substrate and the display apparatus comprising the TFTs and provides a new method for forming the metal oxide semiconductor active layer.

公开(公告)号：US09711653B2

公开(公告)日：2017-07-18

申请号：US14409333

申请日：2014-06-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili Wang ,  Chunsheng Jiang ,  Dongfang Wang ,  Fengjuan Liu

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L21/266 ,  H01L21/02 ,  H01L27/32 ,  H01L21/265

CPC classification number: H01L29/78696 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/265 ,  H01L21/266 ,  H01L27/3244 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/7869

Abstract: Embodiments of the present invention provide a thin film transistor, method for fabricating the thin film transistor and display apparatus. The method includes steps of: forming an active layer pattern which has a mobility greater than a predetermined threshold from an active layer material; and performing ion implantation on the active layer pattern. The energy of a compound bond formed from the implanted ions is greater than that of a compound bond formed from ions in the active layer material, thereby reducing the chance of vacancy formation and reducing the carrier concentration. Therefore, the mobility of the active layer surface is reduced, the leakage current is reduced, the threshold voltage is adjusted to shift toward positive direction and performance of the thin film transistor is improved.

公开(公告)号：US20170162604A1

公开(公告)日：2017-06-08

申请号：US15436141

申请日：2017-02-17

Applicant: BOE Technology Group Co., Ltd.

Inventor： Ce Zhao ,  Chunsheng Jiang ,  Guangcai Yuan

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/02565 ,  H01L21/426 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.

公开(公告)号：US20170077201A1

公开(公告)日：2017-03-16

申请号：US15122172

申请日：2015-09-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiangbo Chen ,  Jun Cheng ,  Chunsheng Jiang ,  Xiaodi Liu ,  Xiangyong Kong

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3262 ,  H01L21/77 ,  H01L27/1288 ,  H01L51/56 ,  H01L2227/323

Abstract: Embodiments of the invention provide an array substrate and a method of manufacturing the same. The method comprises: forming a gate electrode pattern, a gate insulation layer, an active layer pattern and an etching stopping layer on a substrate; forming a photoresist layer on the etching stopping layer; performing a single patterning process on the photoresist layer, such that photoresist in the first region is partially etched off, photoresist in the second region is completely etched off, and photoresist in the third region is completely remained; and performing a single etching process, such that residual photoresist in the first region and a portion of the etching stopping layer in the first region are etched off, and at the same time, a portion of the etching stopping layer and a portion of the gate insulation layer in the second region are etched off.

Abstract translation: 本发明的实施例提供阵列基板及其制造方法。 该方法包括：在衬底上形成栅极电极图案，栅极绝缘层，有源层图案和蚀刻停止层; 在所述蚀刻停止层上形成光致抗蚀剂层; 在光致抗蚀剂层上执行单一的图案化工艺，使得第一区域中的光致抗蚀剂被部分蚀刻掉，第二区域中的光致抗蚀剂被完全蚀刻掉，并且第三区域中的光致抗蚀剂被完全残留; 并进行单蚀刻处理，使得第一区域中的残留光致抗蚀剂和第一区域中的蚀刻停止层的一部分被蚀刻掉，同时蚀刻停止层的一部分和栅极的一部分 第二区域中的绝缘层被蚀刻掉。

公开(公告)号：US20170025491A1

公开(公告)日：2017-01-26

申请号：US15171269

申请日：2016-06-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuyuan Li ,  Liqiang Chen ,  Chunsheng Jiang ,  Changcheng Xu

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3262 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/3246 ,  H01L27/3248 ,  H01L2227/323

Abstract: An embodiment of the present disclosure provides an organic electroluminescent transistor array substrate, including a substrate, and a gate layer, a gate insulating layer, a semiconductor layer, a source layer, a pixel defining layer, an electroluminescent layer and a drain layer formed on the substrate, wherein, the source layer and the drain layer are located in different levels, the source layer includes plural source electrode units corresponding to sub-pixel units respectively, the pixel defining layer includes plural pixel defining units corresponding to the source electrode units respectively, and the respective source electrode units are embedded within the pixel defining units corresponding thereto.

Abstract translation: 本公开的实施例提供了一种有机电致发光晶体管阵列基板，包括基板，以及形成在基板上的栅极层，栅极绝缘层，半导体层，源极层，像素限定层，电致发光层和漏极层 基板，其中源极层和漏极层位于不同的电平，源极层包括分别对应于子像素单元的多个源电极单元，像素限定层包括分别对应于源电极单元的多个像素限定单元 并且各个源电极单元嵌入与其对应的像素限定单元内。

公开(公告)号：US20160372603A1

公开(公告)日：2016-12-22

申请号：US14905068

申请日：2015-08-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Liu ,  Chunsheng Jiang ,  Lung Pao Hsin

IPC: H01L29/786 ,  H01L21/44 ,  H01L21/4763 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L29/78618 ,  H01L21/44 ,  H01L21/47635 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: A thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The thin film transistor includes: an active layer, a source-drain metal layer and a diffusion blocking layer located between the active layer and the source-drain metal layer, wherein, the source-drain metal layer includes a source electrode and a drain electrode; the diffusion blocking layer includes a source blocking part corresponding to a position of the source electrode and a drain blocking part corresponding to a position of the drain electrode; and the diffusion blocking layer is doped with different concentrations of nitrogen from a side close to the source-drain metal layer to a side close to the active layer.

Abstract translation: 提供薄膜晶体管及其制造方法，阵列基板和显示装置。 薄膜晶体管包括：有源层，源极 - 漏极金属层和位于有源层和源极 - 漏极金属层之间的扩散阻挡层，其中源极 - 漏极金属层包括源极和漏极 ; 扩散阻挡层包括对应于源电极的位置的源极阻挡部分和对应于漏极电极的位置的漏极阻挡部分; 并且扩散阻挡层从靠近源极 - 漏极金属层的一侧向靠近有源层的一侧掺杂不同浓度的氮。

公开(公告)号：US20160260744A1

公开(公告)日：2016-09-08

申请号：US14762076

申请日：2014-11-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chunsheng Jiang

IPC: H01L27/12

CPC classification number: H01L27/1214 ,  H01L27/1259 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L2029/42388

Abstract: A thin-film transistor (TFT), a manufacturing method thereof, an array substrate and a display device are disclosed. The method for manufacturing the a TFT comprises the step of forming a gate electrode, a gate insulating layer, an active area, a source electrode and a drain electrode on a base substrate. The active area (4) is made of a ZnON material. When the gate insulating layer is formed, a material for forming the gate insulating layer is subjected to control treatment, so that a sub-threshold amplitude of the TFT is less than or equal to 0.5 mV/dec. The manufacturing method reduces the sub-threshold amplitude of the TFT and improves the semiconductor characteristic of the TFT.

Abstract translation: 公开了薄膜晶体管（TFT），其制造方法，阵列基板和显示装置。 制造TFT的方法包括在基底基板上形成栅电极，栅绝缘层，有源区，源电极和漏电极的步骤。 活性区域（4）由ZnON材料制成。 当形成栅极绝缘层时，用于形成栅极绝缘层的材料进行控制处理，使得TFT的亚阈值振幅小于或等于0.5mV / dec。 该制造方法降低了TFT的亚阈值振幅，并提高了TFT的半导体特性。

公开(公告)号：US20140203303A1

公开(公告)日：2014-07-24

申请号：US14006793

申请日：2012-10-31

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chunsheng Jiang

IPC: H01L27/15

CPC classification number: H01L27/153 ,  H01L27/3246 ,  H01L27/3283 ,  H01L51/0005 ,  H01L51/5012 ,  H01L51/56

Abstract: A light-emitting diode (LED) display substrate, a method for manufacturing the same, and a display device are provided and involve the display field. The method for manufacturing the LED display substrate comprises: forming a transparent conductive anode (201) on a substrate (200); forming a pixel region defined by a first PDL (202) and a second PDL (203) on the substrate (200) on which the anode (201) is formed, in which the second PDL (203) made of a hydrophobic material is disposed on the first PDL (201) made of a hydrophilic material; filling a luminescent material into the pixel region to form an emission layer (204) with the luminescent material; and forming a conductive cathode (205) on the substrate (200) on which the emission layer (204) is formed. The manufacturing method allows the luminescent materials to be flatly laid on the LED display substrate so as to improve the luminous quality of the LED display substrate.

Abstract translation: 提供了发光二极管（LED）显示基板，其制造方法和显示装置，并且涉及显示领域。 制造LED显示基板的方法包括：在基板（200）上形成透明导电阳极（201）; 在形成有阳极（201）的基板（200）上形成由第一PDL（202）和第二PDL（203）限定的像素区域，其中设置由疏水材料制成的第二PDL（203） 在由亲水材料制成的第一PDL（201）上; 将发光材料填充到像素区域中以与发光材料形成发射层（204）; 以及在其上形成有发射层（204）的衬底（200）上形成导电阴极（205）。 该制造方法允许将发光材料平坦放置在LED显示基板上，以提高LED显示基板的发光质量。

公开(公告)号：US20140103343A1

公开(公告)日：2014-04-17

申请号：US14124763

申请日：2012-11-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chunsheng Jiang

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/7869

Abstract: The application discloses a pixel driving circuit and a fabrication method thereof as well as an array substrate, the pixel driving circuit including a switching and a driving TFT, the method including: on a substrate, fabricating a gate, a gate insulation GI layer, an oxide semiconductor layer, and an etching stop ESL layer simultaneously in turn; depositing simultaneously source/drain metals of the switching TFT and the driving TFT, the drain metal of the switching TFT extending and covering the GI layer on the gate of the driving TFT by etching; depositing a protection layer; etching off the protection layer, the drain metal of the switching TFT and the GI layer at a via hole by using a via hole process, to expose the gate of the driving TFT; depositing an ITO layer connecting the drain of the switching TFT and the gate of the driving TFT at the via hole.

Abstract translation: 应用公开了一种像素驱动电路及其制造方法以及阵列基板，该像素驱动电路包括开关和驱动TFT，该方法包括：在基板上制造栅极，栅极绝缘GI层， 氧化物半导体层和蚀刻停止层ESL层; 同时沉积开关TFT和驱动TFT的源极/漏极金属，开关TFT的漏极金属通过蚀刻在驱动TFT的栅极上延伸并覆盖GI层; 沉积保护层; 通过使用通孔工艺在通孔处蚀刻保护层，开关TFT的漏极金属和GI层，以暴露驱动TFT的栅极; 在通孔处沉积连接开关TFT的漏极和驱动TFT的栅极的ITO层。