-
公开(公告)号：US11264411B2
公开(公告)日：2022-03-01
申请号：US16928562
申请日：2020-07-14
发明人： Tongshang Su , Dongfang Wang , Jun Liu , Qinghe Wang , Jun Wang , Ning Liu , Guangyao Li
IPC分类号： H01L23/552 , H01L27/12
摘要： An array substrate and a display device are provided in embodiments of the present disclosure. The array substrate includes a base substrate, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, a source-drain electrode electrically conductive layer, a passivation layer, and a first light shielding layer. The first light shielding layer is disposed on a side of the passivation layer facing away from the interlayer insulating layer. An orthographic projection of the first light shielding layer on the base substrate at least partially overlaps with an orthographic projection of the active layer on the base substrate, and the first light shielding layer is formed by a photoresist material.
-
公开(公告)号：US11257955B2
公开(公告)日：2022-02-22
申请号：US16026307
申请日：2018-07-03
发明人： Qinghe Wang , Luke Ding , Leilei Cheng , Jun Bao , Tongshang Su , Dongfang Wang , Guangcai Yuan
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66 , H01L21/02 , H01L29/24 , H01L29/45 , H01L29/49 , H01L21/027 , H01L29/16 , H01L51/00 , H01L51/10
摘要： The disclosure provides a thin film transistor, an array substrate, and a method for fabricating the same. An embodiment of the disclosure provides a method for fabricating a thin film transistor, the method including: forming a gate, a gate insulation layer, and an active layer above an underlying substrate successively; forming a patterned hydrophobic layer above the active layer, wherein the hydrophobic layer includes first pattern components, and orthographic projections of the first pattern components onto the underlying substrate overlap with a orthographic projection of a channel area at the active layer onto the underlying substrate; and forming a source and a drain above the hydrophobic layer, wherein the source and the drain are located respectively on two sides of a channel area, and in contact with the active layer.
-
公开(公告)号：US11250788B2
公开(公告)日：2022-02-15
申请号：US16863045
申请日：2020-04-30
发明人： Haitao Wang , Guangyao Li , Qinghe Wang , Jun Wang , Dongfang Wang
IPC分类号： G09G3/32 , G09G3/3275 , H01L27/32 , H01L51/52 , H01L51/56
摘要： The disclosure provides a display substrate, a method for fabricating the same, a display device. The display substrate includes a base and a display function layer on the base. The display function layer includes pixel circuits arranged in first and second directions, and data lines in the second direction. Each pixel circuit includes a driving capacitor and a driving transistor, a first electrode of the driving capacitor is in a same layer as the data lines; at least one data line includes at least one first sub-data line segment and at least one second sub-data line segment, a width of the first sub-data line segment is less than that of the second sub-data line segment, an orthographic projection of the first sub-data line on a virtual straight line in the second direction at least partially overlaps with that of the first electrode closest thereto on the virtual straight line.
-
公开(公告)号：US11229877B2
公开(公告)日：2022-01-25
申请号：US16611417
申请日：2019-01-22
发明人： Guangyao Li , Guangcai Yuan , Dongfang Wang , Jun Wang , Qinghe Wang , Wei Li , Leilei Cheng
摘要： The present disclosure provides a gas screening film including at least one gas screening element, each of the at least one gas screening element includes a transistor including a gate, an insulation spacing layer, a first electrode, a semiconductor nanosheet separation layer and a second electrode, and the insulation spacing layer is disposed between the gate and the semiconductor nanosheet separation layer. The present disclosure further provides a manufacturing method of the gas screening film and a face mask. The gas screening film can screen and separate various different gases as necessary.
-
公开(公告)号：US10971523B2
公开(公告)日：2021-04-06
申请号：US16405126
申请日：2019-05-07
发明人： Tongshang Su , Dongfang Wang , Jun Cheng , Jun Liu , Qinghe Wang , Guangyao Li , Liangchen Yan
摘要： The present disclosure provides a pixel array and a fabrication method thereof. The pixel array includes a plurality of gate lines and a plurality of data lines which are arranged intersected and insulated and a pixel unit disposed at a position where each of the plurality of gate lines and each of the plurality of data lines are intersected. The pixel unit includes a thin film transistor (TFT). The width-to-length ratios of channels of the TFTs are sequentially increased in such a manner that the width-to-length ratios of the channels of the TFTs in the pixel units positioned in a same row (and/or a same column) are sequentially increased along a scanning direction of the gate line coupled to gate electrodes of the TFTs in the same row (and/or along a data writing direction of the data line coupled to the source electrodes of the TFTs in the same column).
-
公开(公告)号：US20210014625A1
公开(公告)日：2021-01-14
申请号：US16305229
申请日：2018-03-27
发明人： Rui Peng , Qinghe Wang , Xiang Wan , Xinwei Gao , Xinxin Wang , Zhaokang Fan
摘要： The present disclosure provides a composite electrode, an acoustic sensor using the composite electrode, and a manufacturing method of the composite electrode. The composite electrode includes a conductive layer, and a semiconductor high-molecular polymer layer formed on the conductive layer. The semiconductor high-molecular polymer layer has a three-dimensional mesh structure. The acoustic sensor includes a base; the above-mentioned composite electrode formed on the base; an organic layer formed on the composite electrode; and a top electrode formed on the organic layer.
-
公开(公告)号：US10707286B2
公开(公告)日：2020-07-07
申请号：US16417031
申请日：2019-05-20
发明人： Qinghe Wang , Dongfang Wang , Tongshang Su , Rui Peng , Leilei Cheng , Yang Zhang , Jun Wang , Guangyao Li , Liangchen Yan , Guangcai Yuan
摘要： An OLED device and a method of preparing the same are provided, the OLED device including: a substrate; a first source electrode on the substrate, the first source electrode having a first side surface; a first insulating layer on the first source electrode, the first insulating layer having a second side surface intersecting with an upper surface of the first source electrode and the first side surface of the first source electrode, with at least one of an angle between the first side surface and the upper surface of the substrate and an angle between the second side surface and the upper surface of the substrate being an acute angle; an active layer on the substrate, the active layer covering the first side surface and the second side surface; a gate insulating layer on the active layer; an anode on the gate insulating layer; a light emitting functional layer on the anode; and a cathode on the light emitting functional layer, the cathode including a first drain region covering the first insulating layer and being in contact with the active layer.
-
48.发明申请公开(公告)号：US20200035721A1
公开(公告)日：2020-01-30
申请号：US16337544
申请日：2018-05-29
发明人： Tongshang Su , Guangcai Yuan , Dongfang Wang , Ce Zhao , Bin Zhou , Jun Liu , Jifeng Shao , Qinghe Wang , Yang Zhang
IPC分类号： H01L27/12 , H01L29/423 , H01L29/66 , H01L29/786 , H01L29/417
摘要： There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.
-
49.发明申请公开(公告)号：US20190131143A1
公开(公告)日：2019-05-02
申请号：US15983453
申请日：2018-05-18
发明人： Tongshang Su , Dongfang Wang , Jun Liu , Leilei Cheng , Wei Li , Qinghe Wang , Yang Zhang , Guangcai Yuan
IPC分类号： H01L21/385 , H01L29/786 , H01L29/66
摘要： In an embodiment, there is provided a method of manufacturing a thin-film transistor. The method includes steps of: forming a gate, a gate insulator layer and an active layer on a base substrate, wherein, the gate and the active layer are provided at upper and lower sides of the gate insulator layer, respectively, and the active layer contains impurity ions therein; and, while implementing an annealing on the active layer, applying a voltage between the active layer and the gate to generate an electrical field therebetween, a direction of the electrical field being configured such that the impurity ions move from the active layer into the gate insulator layer. Meanwhile, there are also provided a thin-film transistor, an array substrate and a display apparatus.
-
公开(公告)号：US20190081178A1
公开(公告)日：2019-03-14
申请号：US16026307
申请日：2018-07-03
发明人： Qinghe Wang , Luke Ding , Leilei Cheng , Jun Bao , Tongshang Su , Dongfang Wang , Guangcai Yuan
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66 , H01L21/027 , H01L21/02 , H01L29/24 , H01L29/45 , H01L29/49
摘要： The disclosure provides a thin film transistor, an array substrate, and a method for fabricating the same. An embodiment of the disclosure provides a method for fabricating a thin film transistor, the method including: forming a gate, a gate insulation layer, and an active layer above an underlying substrate successively; forming a patterned hydrophobic layer above the active layer, wherein the hydrophobic layer includes first pattern components, and orthographic projections of the first pattern components onto the underlying substrate overlap with a orthographic projection of a channel area at the active layer onto the underlying substrate; and forming a source and a drain above the hydrophobic layer, wherein the source and the drain are located respectively on two sides of a channel area, and in contact with the active layer.
-
-
-
-
-
-
-
-
-
搜索结果
71 条记录 (耗时 0.035 秒)
