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公开(公告)号：US12133417B2
公开(公告)日：2024-10-29
申请号：US17432462
申请日：2021-02-24
发明人： Leilei Cheng , Yongchao Huang , Qinghe Wang , Yang Zhang , Bin Zhou
IPC分类号： H10K59/12 , H10K59/121 , H10K59/32 , H10K59/80 , H10K59/82 , H10K71/20 , H10K77/10 , G02F1/13
CPC分类号： H10K59/1201 , H10K59/1213 , H10K59/32 , H10K59/82 , H10K59/87 , H10K71/20 , H10K77/10 , G02F1/1306
摘要： The disclosure relates to the technical field of display, in particular to a displaying substrate, a manufacturing method thereof and a display panel. The displaying substrate comprises a passivation layer (28) and a flat layer (29) covering the passivation layer (28), wherein the flat layer (29) comprises a first flat via hole and a plurality of second flat via holes, the passivation layer (28) comprises a first passivation via hole, and the first flat via hole and the first passivation via hole form a first sleeve hole (31); and the hole depth of the first flat via hole is smaller than that of each second flat via hole, and the hole depth of the first passivation via hole is greater than or equal to the difference between the maximum hole depth of all the second flat via holes and the hole depth of the first flat via hole.
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公开(公告)号：US11980058B2
公开(公告)日：2024-05-07
申请号：US17486790
申请日：2021-09-27
发明人： Haitao Wang , Qinghe Wang , Jun Wang , Tongshang Su , Jun Cheng
IPC分类号： H10K59/121 , H10K59/12 , H10K59/126 , H10K59/131 , H10K71/00
CPC分类号： H10K59/1213 , H10K59/1216 , H10K59/126 , H10K59/131 , H10K71/00 , H10K59/1201
摘要： A display substrate, a preparation method thereof, and a display apparatus are provide. The display substrate includes: a base substrate, an active layer disposed on the base substrate, a first gate insulating layer disposed on the active layer, a first conductive layer disposed on the first gate insulating layer, and a second conductive layer disposed on the first conductive layer and electrically connected with the first conductive layer; an orthographic projection of the first conductive layer on the base substrate does not overlap with an orthographic projection of the active layer on the base substrate; the second conductive layer includes gates; orthographic projections of the gates on the base substrate and the orthographic projection of the active layer on the base substrate have an overlap area; and the display substrate further includes: at least one insulating layer located between the first conductive layer and the gates.
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公开(公告)号：US11785811B2
公开(公告)日：2023-10-10
申请号：US17241703
申请日：2021-04-27
发明人： Ning Liu , Jun Liu , Wei Song , Qinghe Wang , Bin Zhou , Liangchen Yan
IPC分类号： H01L29/08 , H10K59/124 , H10K59/126 , H10K59/12
CPC分类号： H10K59/124 , H10K59/126 , H10K59/1201
摘要： An array substrate, a method for manufacturing the array substrate and a display device are provided. The array substrate includes: a base substrate, and a thin film transistor, a storage capacitor, and a lapping pattern for connecting the thin film transistor to the storage capacitor arranged on the base substrate; wherein the thin film transistor includes a semiconductor layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a source electrode and a drain electrode arranged sequentially in that order; the interlayer insulation layer includes at least two inorganic insulation layers and at least one organic insulation layer laminated one on another, and both a layer proximate to the base substrate and a layer distal to the base substrate in the interlayer insulation layer are the inorganic insulation layers.
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4.发明授权公开(公告)号：US11342431B2
公开(公告)日：2022-05-24
申请号：US16767247
申请日：2019-12-18
发明人： Tongshang Su , Dongfang Wang , Qinghe Wang , Ning Liu , Yongchao Huang , Yu Ji , Zheng Wang , Liangchen Yan
IPC分类号： H01L29/423 , H01L29/786 , H01L29/49 , H01L29/66 , H01L29/40 , H01L21/223 , H01L21/3213 , H01L21/383 , H01L21/4763 , H01L27/12
摘要： A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor is formed on a substrate and includes: an active layer on the substrate, the active layer including a source region, a drain region, and a channel region between the source region and the drain region; a first gate electrode on a side of the active layer away from the substrate; and a second gate electrode on a side of the first gate electrode away from the substrate, wherein a thickness of the first gate electrode is smaller than a thickness of the second gate electrode.
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5.发明授权公开(公告)号：US11239264B2
公开(公告)日：2022-02-01
申请号：US16652219
申请日：2019-10-18
发明人： Tongshang Su , Dongfang Wang , Qinghe Wang , Liangchen Yan
摘要： The present disclosure provides a thin film transistor, a display substrate, a method for preparing the same, and a display device including the display substrate. The method for preparing the thin film transistor includes: forming an inorganic insulating film layer in contact with an electrode of the thin film transistor by a plasma enhanced chemical vapor deposition process at power of 9 kW to 25 kW, at a temperature of 190° C. to 380° C. and by using a mixture of gases N2, NH3 and SiH4 in a volume ratio of N2:NH3:SiH4=(10˜20):(5˜10):(1˜2), such that a stress value of the inorganic insulating film layer is reduced to be less than or equal to a threshold, and the inorganic insulating layer comprises silicon nitride.
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公开(公告)号：US11043644B2
公开(公告)日：2021-06-22
申请号：US15949112
申请日：2018-04-10
发明人： Qinghe Wang , Jinliang Hu , Rui Peng , Dongfang Wang , Guangcai Yuan
IPC分类号： H04R3/00 , H04R17/02 , H01L51/05 , H01L51/00 , H04R31/00 , H04R7/06 , H04R1/40 , H04R19/00 , H04R19/04 , G01H11/06 , H01L51/10 , H04R23/00 , H01L27/28
摘要： The present disclosure provides a transistor acoustic sensor element and a method for manufacturing the same, an acoustic sensor and a portable device. The transistor acoustic sensor element comprises a gate, a gate insulating layer, a first electrode, an active layer and a second electrode arranged on a base substrate, wherein the active layer has a nanowire three-dimensional mesh structure and thus can vibrate under the action of sound signals, so that the output current of the transistor acoustic sensor element changes correspondingly. Since the active layer having the nanowire three-dimensional mesh structure can sensitively sense weak vibration of acoustic waves, the sensitivity to sound signals of the transistor acoustic sensor element is improved.
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公开(公告)号：US20210184126A1
公开(公告)日：2021-06-17
申请号：US17271637
申请日：2020-05-14
发明人： Tongshang Su , Dongfang Wang , Jun Liu , Yingbin Hu , Qinghe Wang , Shengping Du , Liangchen Yan
摘要： A method for manufacturing a light-emitting component, including forming an auxiliary electrode and a first electrode arranged at an interval on a base substrate; depositing, by means of a mask with a hollow area, a light-emitting layer on the base substrate on which the auxiliary electrode and the first electrode are formed; and forming a second electrode on the base substrate on which the light-emitting layer is formed. The light-emitting layer covers at least part of the first electrode, and at least a partial area of the auxiliary electrode is exposed outside the light-emitting layer. The second electrode covers at least part of the light-emitting layer and the at least partial area of the auxiliary electrode, and the second electrode is connected to the at least partial area of the auxiliary electrode.
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8.发明授权公开(公告)号：US11011644B2
公开(公告)日：2021-05-18
申请号：US16506216
申请日：2019-07-09
发明人： Guangyao Li , Lei Huang , Haitao Wang , Jun Wang , Qinghe Wang , Wei Li , Dongfang Wang , Liangchen Yan
IPC分类号： H01L27/12 , H01L29/786 , G01N27/00 , H01L29/66
摘要： The present disclosure provides a thin film transistor, a thin film transistor array, and a method for detecting an object to be detected, wherein the thin film transistor is configured to detect a parameter of an object to be detected bound with a metal ion and includes an active layer, wherein: a carrier of the active layer without a metal element contained in the metal ion bound is of a first mobility, and a carrier of the active layer with the metal element bound is of a second mobility different from the first mobility.
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公开(公告)号：US10418447B2
公开(公告)日：2019-09-17
申请号：US15940043
申请日：2018-03-29
发明人： Guangyao Li , Guangcai Yuan , Dongfang Wang , Jun Wang , Qinghe Wang , Ning Liu
IPC分类号： H01L31/032 , H01L29/24 , H01L29/45 , H01L29/49 , H01L29/786 , H01L21/445 , H01L31/0392 , H01L31/113 , H01L29/66 , H01L21/02 , H01L29/84 , H01L27/12 , H01L27/28
摘要： Provided is a thin film transistor, a production method thereof, and an electronic apparatus. The thin film transistor comprises a substrate, and a gate electrode, a gate insulator layer, a source electrode, a drain electrode and an active layer on the substrate, wherein the active layer comprises a stack of two or more layers of graphene-like two-dimensional semiconductor material. The electronic apparatus comprises the thin film transistor, and may be used as an optical or mechanical sensor.
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公开(公告)号：US20240188328A1
公开(公告)日：2024-06-06
申请号：US18040983
申请日：2022-04-28
发明人： Yang Zhang , Qinghe Wang , Haitao Wang , Duoduo Wang , Shan Liu , Xiaodong Zhang
IPC分类号： H10K59/121 , H10K59/122 , H10K59/124 , H10K59/131
CPC分类号： H10K59/1213 , H10K59/1216 , H10K59/122 , H10K59/124 , H10K59/1315
摘要： A display substrate and a display device are provided. The display substrate includes: a plurality of pixel units arranged on a base substrate; a first conductive layer, a semiconductor layer, a second conductive layer and a pixel definition layer sequentially arranged on the base substrate. A pixel driving circuit includes a sensing transistor, a storage capacitance and a capacitance wire. A source electrode and a drain electrode of the sensing transistor are located in the second conductive layer, a second capacitance electrode of the storage capacitance and the capacitance wire are located in the first conductive layer. The capacitance wire includes a capacitance wire body portion extending in a second direction. For one same sub-pixel, an orthographic projection of the capacitance wire body portion of the pixel driving circuit thereof on the base substrate is spaced apart from that of the light emitting region thereof on the base substrate.
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