公开(公告)号：US11778847B2

公开(公告)日：2023-10-03

申请号：US17345029

申请日：2021-06-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Youngsuk Song ,  Wei Liu ,  Hongda Sun

IPC: H01L51/52 ,  H10K50/824 ,  H10K59/122 ,  H10K71/00 ,  H10K50/818 ,  H10K50/828 ,  H10K59/12 ,  H10K102/10 ,  H10K102/00

CPC classification number: H10K50/824 ,  H10K59/122 ,  H10K71/00 ,  H10K50/818 ,  H10K50/828 ,  H10K59/1201 ,  H10K2102/103 ,  H10K2102/3026

Abstract: A display panel includes: a substrate, a pixel-defining layer disposed on the substrate, and a conductive pattern, a light-emitting layer and a cathode layer which are laminated in a direction perpendicular to and away from the substrate. The pixel-defining layer is configured to define a plurality of pixel regions and a non-pixel region outside the pixel regions on the substrate. The conductive pattern includes: an auxiliary electrode layer disposed in the non-pixel region, wherein a groove is formed in a side wall of the auxiliary electrode layer. The cathode layer includes: a first portion disposed in the pixel region and a second portion disposed in the non-pixel region. The second portion of the cathode layer extends into the groove and is in contact with the groove.

公开(公告)号：US11631705B2

公开(公告)日：2023-04-18

申请号：US17028988

申请日：2020-09-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongda Sun ,  Wenjun Hou

IPC: H01L27/12

Abstract: A method of manufacturing a display substrate, a display substrate and a display panel are provided. The method of manufacturing a display substrate includes: infiltrating an etching point of a film group with an etching solution, to form an infiltration groove at the etching point of a film group; and patterning a remaining part of the film group at the infiltration groove, to obtain a via hole penetrating the remaining part of the film group.

公开(公告)号：US20230042951A1

公开(公告)日：2023-02-09

申请号：US17874653

申请日：2022-07-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hongda Sun ,  Youngsuk Song ,  Zhen Song ,  Guoying Wang

IPC: H01L27/32 ,  H01L51/52

Abstract: The present disclosure is related to an array substrate. The array substrate may include a base substrate and a pixel defining layer on the base substrate. The pixel defining layer may include a plurality of thickness thinning regions. The thickness thinning regions may have a smaller height than other areas of the pixel define layer on the base substrate. The plurality of the thickness thinning regions may be configured to guide flow of fillers to form an encapsulating layer on the pixel defining layer.

公开(公告)号：US11424303B2

公开(公告)日：2022-08-23

申请号：US16082396

申请日：2018-03-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongda Sun ,  Youngsuk Song ,  Zhen Song ,  Guoying Wang

IPC: H01L27/32 ,  H01L27/15 ,  H01L51/50 ,  H01L51/52 ,  G02F1/13 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1362 ,  H01L51/44

Abstract: An array substrate may include a base substrate and a pixel defining layer on the base substrate. The pixel defining layer may include a plurality of thickness thinning regions. The thickness thinning regions may have a smaller height than other areas of the pixel defining layer on the base substrate. The plurality of the thickness thinning regions may be configured to guide flow of fillers to form an encapsulating layer on the pixel defining layer.

公开(公告)号：US20220223629A1

公开(公告)日：2022-07-14

申请号：US17378576

申请日：2021-07-16

Applicant: BOE Technology Group Co., Ltd.

Inventor： Youngsuk SONG ,  Wei LIU ,  Hongda Sun

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A thin-film transistor (TFT) array substrate, a preparation method thereof, and a display device are provided. The TFT array substrate includes a source, a drain, and a first gate; wherein a protrusive structure is defined between the source and the drain, and the first gate is disposed inside the protrusive structure; and in a plane where a surface of the first gate is disposed, a sum of an overlapped area of a projection of the source and a projection of the first gate and an overlapped area of a projection of the drain and the projection of the first gate is less than an area threshold.

公开(公告)号：US20210225964A1

公开(公告)日：2021-07-22

申请号：US16082396

申请日：2018-03-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongda Sun ,  Youngsuk Song ,  Zhen Song ,  Guoying Wang

IPC: H01L27/32 ,  H01L51/52

Abstract: It is related to an array substrate (1). The array substrate (1) may include a base substrate (10) and a pixel define layer (30) on the base substrate (1). The pixel define layer (30) may include a plurality of thickness thinning regions (312). The thickness thinning regions (312) may have a smaller height than other areas of the pixel define layer (30) on the base substrate (1). The plurality of the thickness thinning regions (312) may be configured to guide flow of fillers to form an encapsulating layer (40) on the pixel define layer (30).

公开(公告)号：US10833107B2

公开(公告)日：2020-11-10

申请号：US16322266

申请日：2018-05-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan Liu ,  Youngsuk Song ,  Hongda Sun

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/417

Abstract: Provided are a thin film transistor and manufacturing method therefor, and an array substrate, and a display device. The method includes: forming a source electrode and a drain electrode on a substrate; forming a photoresist layer at the side of the source electrode and the drain electrode away from the substrate; performing exposure and developing treatment on the photoresist layer so as to obtain a photoresist pattern; successively forming a semiconductor layer, a first insulation layer and a conducting layer in sequence on at the side of the photoresist pattern away from the substrate; and removing the photoresist pattern so as to obtain an active layer a gate insulation layer and a gate electrode.

公开(公告)号：US10141449B2

公开(公告)日：2018-11-27

申请号：US15037610

申请日：2015-09-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili Wang ,  Hongda Sun ,  Fengjuan Liu ,  Lungpao Hsin

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/225 ,  H01L29/227 ,  H01L29/24 ,  H01L27/12

Abstract: The embodiments of the present invention provides an oxide TFT, an array substrate and a display device, an oxide channel layer of the oxide TFT comprises a front channel oxide layer and a back channel oxide layer, a conduction band bottom of the back channel oxide layer being higher than a conduction band bottom of the front channel oxide layer, and a band gap of the back channel oxide layer being larger than a band gap of the front channel oxide layer. In the oxide TFT, the array substrate and the display device provided in the present invention, it is possible to accumulate a large number of electrons through the potential difference formed between oxide channel layers of a multilayer structure so as to increase the carrier concentration in the oxide channel layers to achieve the purpose of improving TFT mobility without damaging TFT stability.

公开(公告)号：US09859339B2

公开(公告)日：2018-01-02

申请号：US15307090

申请日：2016-03-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongda Sun ,  Xuyuan Li ,  Meili Wang

IPC: H01L27/32 ,  H01L21/77 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/32 ,  H01L21/77 ,  H01L27/3246 ,  H01L27/3274 ,  H01L51/52 ,  H01L51/5296 ,  H01L51/56

Abstract: A display substrate, a manufacturing method and a driving method thereof, and a display device are provided. The display substrate includes a substrate, a gate layer disposed on the substrate, a gate insulating layer disposed on the gate layer, a pixel defining layer disposed on the gate insulating layer, the pixel defining layer includes a plurality of defining regions, a light emitting layer in the defining regions of the pixel defining layer disposed on the gate insulating layer, wherein the light emitting layer includes an electron excitation layer, a light excitation layer and a hole excitation layer, and a source/drain layer disposed on the light emitting layer. According to an embodiment of the present disclosure, light emission and control of light emission can be realized merely by a three-layer structure of a gate layer, a light emitting layer and a source/drain layer, and compared with the OLED light emitting structure of the prior art, the layer structure is simpler, the light emitted is less blocked, and luminous efficiency is higher.

公开(公告)号：US20170186879A1

公开(公告)日：2017-06-29

申请号：US15315762

申请日：2016-03-28

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hongda Sun ,  Youngsuk Song

IPC: H01L29/786 ,  H01L51/52 ,  H01L33/44 ,  H01L51/56 ,  H01L21/70 ,  H01L33/00

CPC classification number: H01L29/78633 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/7869 ,  H01L33/005 ,  H01L33/44 ,  H01L51/52 ,  H01L51/56

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing thereof are disclosed. The thin film transistor includes a gate electrode, an insulating layer, an active layer and a source/drain electrode layer, and further includes a light shielding layer, and the light shielding layer is configured to block light from entering the active layer via the insulating layer, and the light shielding layer and the gate electrode are arranged in a same layer and electrically unconnected with each other. The thin film transistor can reduce the light irradiated to the active layer and thus reduce the adverse impact thus incurred.