公开(公告)号：US10811114B2

公开(公告)日：2020-10-20

申请号：US16138878

申请日：2018-09-21

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lijun Yuan ,  Mingfu Han ,  Seung Woo Han ,  Xing Yao ,  Zhichong Wang ,  Guangliang Shang ,  Haoliang Zheng

IPC: G11C19/00 ,  G11C19/28 ,  G09G3/3258 ,  G09G3/36

Abstract: Embodiments of the present application provide a shift register unit, a method for driving the same, a gate driving circuit, and a display apparatus. The shift register unit comprises at least two sub-circuits of a first output sub-circuit, a second output sub-circuit, and a third output sub-circuit. The first output sub-circuit is configured to output a voltage at a signal output terminal to a reset signal output terminal; the second output sub-circuit is configured to output the voltage at the signal output terminal to a gating signal output terminal; and the third output sub-circuit is configured to output a voltage at a second voltage terminal to a light-emitting control signal output terminal or is configured to output a voltage at a first voltage terminal to the light-emitting control signal output terminal.

公开(公告)号：US10403228B2

公开(公告)日：2019-09-03

申请号：US14909661

申请日：2015-07-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xing Yao ,  Yuanbo Zhang ,  Seungwoo Han

IPC: G11C19/00 ,  G09G5/00 ,  G09G3/30 ,  G11C19/28 ,  G09G3/20 ,  G09G3/36

Abstract: A shift register unit includes: a discharging TFT, a source electrode and a drain electrode of which are connected to a first low level signal input end and a pull-up node respectively; and a first discharging control unit connected to a gate electrode of the discharging TFT and configured to output a first control signal to the gate electrode of the discharging TFT between a first and a second time points, so as to enable the discharging TFT to be in an on state and output a first low level signal to the pull-up node, thereby to discharge the pull-up node. The first time point is a time point when the processing of a first frame by the shift register is ended, and the second time point is a time point when the processing of a second frame adjacent to the first frame by the shift register is started.

公开(公告)号：US10217391B2

公开(公告)日：2019-02-26

申请号：US15541639

申请日：2016-09-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangliang Shang ,  Xing Yao ,  Seungwoo Han ,  Yujie Gao ,  Yuanbo Zhang ,  Ming Chen ,  Jungmok Jun ,  Xue Dong

IPC: G11C19/28 ,  G09G3/32 ,  G09G3/36 ,  G09G3/20 ,  G09G3/3266

Abstract: Disclosed is a shift register unit, a gate driving circuit and a driving method, as well as a display apparatus. The shift register unit has a working cycle including an input phase, an output phase, a reset phase and a maintaining phase. In the reset phase, a clock signal is transmitted to an output terminal to pull a voltage of the output terminal down to a reference voltage, and the pulled-down voltage of the output terminal is subsequently changed from the reference voltage to a gate-off voltage. In the maintaining phase, the voltage of the output terminal is maintained at the gate-off voltage. The reference voltage is smaller than the gate-off voltage.

公开(公告)号：US10204695B2

公开(公告)日：2019-02-12

申请号：US15520191

申请日：2016-11-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangliang Shang ,  Seungwoo Han ,  Mingfu Han ,  Haoliang Zheng ,  Xing Yao ,  Hyunsic Choi

IPC: G09G5/00 ,  G11C19/28 ,  G09G3/20 ,  G09G3/36

Abstract: The present application discloses a control circuit for controlling a noise reduction thin film transistor in a shift register unit. The control circuit includes a timer for initiating a timing process when the shift register is turned on, to obtain an operating time of the shift register; a threshold voltage calculator coupled to the timer for calculating a present threshold voltage based on the operating time, a gate voltage of the noise reduction thin film transistor, and an initial threshold voltage of the noise reduction thin film transistor; and a gate voltage controller coupled to the threshold voltage calculator for adjusting the gate voltage of the noise reduction thin film transistor during the noise reduction phase, to control the noise reduction thin film transistor in an ON state during the noise reduction phase.

公开(公告)号：US10192504B2

公开(公告)日：2019-01-29

申请号：US15501265

申请日：2016-07-01

Applicant: BOE TECHNOLOGY GROUP CO., LTD

Inventor： Mingfu Han ,  Seungwoo Han ,  Guangliang Shang ,  Hyunsic Choi ,  Xing Yao ,  Haoliang Zheng ,  Xue Dong ,  Jungmok Jun ,  Yunsik Im

IPC: G11C19/00 ,  G09G3/36 ,  G11C19/28

Abstract: The present disclosure provides a shift register, including: an input unit, an output control unit, a first pull-down unit, a second pull-down unit, a reset unit, and a pull-down control unit. The input unit comprises a control terminal connected to a signal input terminal, a first terminal connected to a first voltage terminal, and a second terminal connected to a first node. The output control unit comprises a control terminal connected to the first node, a first terminal connected to a first clock signal terminal, and a second terminal connected to a signal output terminal. The first pull-down unit comprises a control terminal connected to a second node, a first terminal connected to the first node, and a second terminal connected to a compensation signal terminal. The second pull-down unit comprises a control terminal connected to the compensation signal terminal, and a first terminal connected to the second node.

公开(公告)号：US10115335B2

公开(公告)日：2018-10-30

申请号：US15502983

申请日：2016-05-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haoliang Zheng ,  Seungwoo Han ,  Guangliang Shang ,  Hyunsic Choi ,  Mingfu Han ,  Xing Yao ,  Zhichong Wang ,  Lijun Yuan

IPC: G11C19/00 ,  G09G3/20 ,  G11C19/28

Abstract: The present disclosure relates to a shift register unit and driving method thereof, a gate driving circuit and a display device. The shift register unit comprises: an input module for controlling a level of a first node based on a scan pulse, an output module for controlling a scan pulse output based on the level of the first node, a reset module for resetting the first node and the scan pulse output, and a control module for generating a reset trigger signal, wherein the reset module further resets the first node based on the reset trigger signal. The shift register units can be cascaded to form a gate driving circuit to realize output of multiple scan pulses. By integrating such a gate driving circuit on the array substrate, area of the bezel region of the array substrate can be reduced, thereby facilitating bezel narrowing of a display device. At the same time, due to presence of the control module, the reset module is enabled to reset the first node more stably while normal output of the scan pulse is maintained.

公开(公告)号：US20180204494A1

公开(公告)日：2018-07-19

申请号：US15541639

申请日：2016-09-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangliang Shang ,  Xing Yao ,  Seungwoo Han ,  Yujie Gao ,  Yuanbo Zhang ,  Ming Chen ,  Jungmok Jun ,  Xue Dong

IPC: G09G3/20 ,  G11C19/28

CPC classification number: G09G3/20 ,  G09G3/3266 ,  G09G3/3677 ,  G09G2300/0408 ,  G09G2310/0267 ,  G09G2310/0286 ,  G11C19/28 ,  G11C19/287

Abstract: Disclosed is a shift register unit, a gate driving circuit and a driving method, as well as a display apparatus. The shift register unit has a working cycle including an input phase, an output phase, a reset phase and a maintaining phase. In the reset phase, a clock signal is transmitted to an output terminal to pull a voltage of the output terminal down to a reference voltage, and the pulled-down voltage of the output terminal is subsequently changed from the reference voltage to a gate-off voltage. In the maintaining phase, the voltage of the output terminal is maintained at the gate-off voltage. The reference voltage is smaller than the gate-off voltage.

公开(公告)号：US09793300B2

公开(公告)日：2017-10-17

申请号：US14900960

申请日：2015-06-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolin Wang ,  Xing Yao ,  Yoonsung Um ,  Seungwoo Han ,  Yunsik Im

IPC: H01L27/14 ,  H01L27/12 ,  H01L29/786 ,  H01L27/02 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L27/124 ,  H01L27/0207 ,  H01L27/1255 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/786 ,  H01L29/78606

Abstract: The present disclosure provides a TFT and a circuit structure to improve the characteristics of the threshold voltage drift of the TFT. The TFT includes a gate electrode, a semiconductor layer, an etch stop layer, and a source electrode and a drain electrode connected to the semiconductor layer. The TFT further includes a stopping structure arranged over the etch stop layer. The stopping structure is electrically isolated from the source electrode and the drain electrode, and an orthogonal projection of the stopping structure onto the etch stop layer at least partially overlaps an orthogonal projection of the semiconductor layer onto the etch stop layer. The present disclosure improves the characteristics of the threshold voltage drift of the TFT.

公开(公告)号：US09620241B2

公开(公告)日：2017-04-11

申请号：US14416029

申请日：2014-05-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Seungwoo Han ,  Xing Yao

IPC: G09G3/32 ,  G11C19/28 ,  G09G3/3225 ,  G09G3/3266

CPC classification number: G11C19/28 ,  G09G3/3225 ,  G09G3/3266 ,  G09G2300/0842 ,  G09G2310/0286

Abstract: According to an embodiment of the present disclosure, a shift register unit may include: a first control module, configured to transmit a start signal to a first node; a second control module, configured to pull a potential of a second node to a potential different from a potential of the first node, under a control of a first clock signal; a carry output module, configured to output a carry signal according to the potential of the first node and the potential of the second node; and a shift output module, configured to output a shift signal according to the potential of the first node and the potential of the second node.

公开(公告)号：US20160372487A1

公开(公告)日：2016-12-22

申请号：US14900960

申请日：2015-06-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolin Wang ,  Xing Yao ,  Yoonsung Um ,  Seungwoo Han ,  Yunsik Im

IPC: H01L27/12 ,  H01L27/02 ,  H01L29/423 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L27/124 ,  H01L27/0207 ,  H01L27/1255 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/786 ,  H01L29/78606

Abstract: The present disclosure provides a TFT and a circuit structure to improve the characteristics of the threshold voltage drift of the TFT. The TFT includes a gate electrode, a semiconductor layer, an etch stop layer, and a source electrode and a drain electrode connected to the semiconductor layer. The TFT further includes a stopping structure arranged over the etch stop layer. The stopping structure is electrically isolated from the source electrode and the drain electrode, and an orthogonal projection of the stopping structure onto the etch stop layer at least partially overlaps an orthogonal projection of the semiconductor layer onto the etch stop layer. The present disclosure improves the characteristics of the threshold voltage drift of the TFT.

Abstract translation: 本公开提供了TFT和电路结构，以改善TFT的阈值电压漂移的特性。 TFT包括栅电极，半导体层，蚀刻停止层，以及连接到半导体层的源电极和漏电极。 TFT还包括布置在蚀刻停止层上方的停止结构。 停止结构与源电极和漏电极电隔离，并且止动结构在蚀刻停止层上的正交投影至少部分地与半导体层的正交投影重叠在蚀刻停止层上。 本公开改善了TFT的阈值电压漂移的特性。