Non-volatile memory circuit including voltage divider with phase change memory devices
    43.
    发明授权
    Non-volatile memory circuit including voltage divider with phase change memory devices 有权
    包括具有相变存储器件的分压器的非易失性存储器电路

    公开(公告)号:US08130538B2

    公开(公告)日:2012-03-06

    申请号:US12354121

    申请日:2009-01-15

    IPC分类号: G11C11/00

    CPC分类号: G11C14/009 G11C13/0004

    摘要: A memory circuit including a voltage divider with a first phase change memory (PCM) device and a second PCM device coupled to the first PCM device is described. In one embodiment, the first PCM device is in a set resistance state and the second PCM device is in a reset resistance state. Also, in one embodiment, the voltage divider further includes a first switch coupled to the first PCM device and a second switch coupled to the first switch and the second PCM device. In one embodiment, the memory circuit further includes a half latch coupled to the voltage divider and a cascade transistor coupled to the half latch and the voltage divider.

    摘要翻译: 描述了包括具有第一相变存储器(PCM)装置的分压器和耦合到第一PCM装置的第二PCM装置的存储器电路。 在一个实施例中,第一PCM器件处于设定电阻状态,第二PCM器件处于复位电阻状态。 而且,在一个实施例中,分压器还包括耦合到第一PCM器件的第一开关和耦合到第一开关和第二PCM器件的第二开关。 在一个实施例中,存储器电路还包括耦合到分压器的半锁存器和耦合到半锁存器和分压器的级联晶体管。