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    Information storage devices using magnetic domain wall movement and methods of operating the same
    41.
    发明授权
    Information storage devices using magnetic domain wall movement and methods of operating the same 有权
    信息存储设备采用磁畴壁运动和操作方式相同

    公开(公告)号：US07869264B2

    公开(公告)日：2011-01-11

    申请号：US11980627

    申请日：2007-10-31

    申请人： Hoo-san Lee ,  Chee-kheng Lim ,  Hoon-sang Oh

    发明人： Hoo-san Lee ,  Chee-kheng Lim ,  Hoon-sang Oh

    IPC分类号： G11C11/00

    CPC分类号： G11C11/14 ,  G11C19/0808 ,  Y10T428/11

    摘要： An information storage device includes a record head and a data recording medium. The record head includes a magnetic substance having magnetic domain walls and records data in the data recording medium. In a method of operating the information storage device, a first high frequency current or a high frequency magnetic field is supplied to the magnetic substance while magnetic domain walls of the magnetic substance are moved.

    摘要翻译： 信息存储装置包括记录头和数据记录介质。 记录头包括具有磁畴壁的磁性物质，并将数据记录在数据记录介质中。 在操作信息存储装置的方法中，在磁性物质的磁畴壁移动的同时向磁性物质提供第一高频电流或高频磁场。

    Magnetic domain information storage device and method of manufacturing the same
    42.
    发明授权
    Magnetic domain information storage device and method of manufacturing the same 有权
    磁畴信息存储装置及其制造方法

    公开(公告)号：US07864556B2

    公开(公告)日：2011-01-04

    申请号：US11987925

    申请日：2007-12-06

    申请人： Chee-kheng Lim ,  Sung-hoon Choa

    发明人： Chee-kheng Lim ,  Sung-hoon Choa

    IPC分类号： G11C19/00

    CPC分类号： G11C19/0808 ,  Y10S977/933

    摘要： Example embodiments may provide magnetic domain information storage devices with trenches and a method of manufacturing the information storage device. Example embodiment information storage devices may include a magnetic layer on a substrate having a plurality of magnetic domains and a power unit for moving magnetic domain walls. Magnetic layers may be parallel to the substrate, and a plurality of trenches in the magnetic layer may be perpendicular to the substrate. Portions of a lower surface of the magnetic layer corresponding to trenches may protrude downward.

    摘要翻译： 示例性实施例可以提供具有沟槽的磁畴信息存储设备和制造信息存储设备的方法。 示例性实施例信息存储设备可以包括在具有多个磁畴的基板上的磁性层和用于移动磁畴壁的功率单元。 磁性层可以平行于衬底，并且磁性层中的多个沟槽可以垂直于衬底。 对应于沟槽的磁性层的下表面的部分可以向下突出。

    Information storage devices using movement of magnetic domain wall and methods of manufacturing the information storage device
    44.
    发明申请
    Information storage devices using movement of magnetic domain wall and methods of manufacturing the information storage device 有权
    使用磁畴壁移动的信息存储装置和制造信息存储装置的方法

    公开(公告)号：US20080152953A1

    公开(公告)日：2008-06-26

    申请号：US11980425

    申请日：2007-10-31

    申请人： Chee-kheng Lim

    发明人： Chee-kheng Lim

    IPC分类号： G11B5/66 ,  G11B5/84

    CPC分类号： G11C19/0808 ,  G11C11/15 ,  G11C19/0841

    摘要： An information storage device includes a magnetic layer and a supply unit. The magnetic layer includes a plurality of regions, a first region having a first magnetic anisotropic energy and a second region having a second magnetic anisotropic energy. The first and second regions are arranged alternately, and the second region is doped with impurity ions. The second magnetic anisotropic energy is less than the first magnetic anisotropic energy. The supply unit applies energy to the magnetic layer for moving magnetic domain walls within the magnetic layer.

    摘要翻译： 信息存储装置包括磁性层和供给单元。 磁性层包括多个区域，具有第一磁性各向异性能的第一区域和具有第二磁性各向异性能的第二区域。 第一和第二区域交替布置，第二区域掺杂有杂质离子。 第二磁各向异性能量小于第一磁各向异性能量。 供给单元向磁性层施加能量以在磁性层内移动磁畴壁。

    Magnetic recording medium
    47.
    发明申请
    Magnetic recording medium 审中-公开
    磁记录介质

    公开(公告)号：US20070230053A1

    公开(公告)日：2007-10-04

    申请号：US11655217

    申请日：2007-01-19

    申请人： Sok-hyun Kong ,  Chee-kheng Lim ,  Hoon-sang Oh ,  Hoo-san Lee ,  Seong-yong Yoon

    发明人： Sok-hyun Kong ,  Chee-kheng Lim ,  Hoon-sang Oh ,  Hoo-san Lee ,  Seong-yong Yoon

    IPC分类号： G11B5/74

    CPC分类号： G11B5/667

    摘要： A magnetic recording medium is provided. The magnetic recording medium includes: a substrate; a perpendicular magnetic recording layer which is formed over the substrate; a first soft magnetic underlayer which is disposed between the perpendicular magnetic recording layer and the substrate; a second soft magnetic underlayer which is disposed between the first soft magnetic underlayer and the perpendicular magnetic recording layer; and an isolation layer which is disposed between the first soft magnetic underlayer and the second magnetic layer and which prevents magnetic interaction between the first soft magnetic underlayer and the second soft magnetic underlayer, wherein anisotropy field Hk of the second soft magnetic underlayer is greater than anisotropy field Hk of the first soft magnetic underlayer.

    摘要翻译： 提供磁记录介质。 磁记录介质包括：基板; 垂直磁记录层，形成在衬底上; 设置在垂直磁记录层和基板之间的第一软磁性底层; 第二软磁性底层，其设置在第一软磁性底层和垂直磁记录层之间; 以及隔离层，其设置在所述第一软磁性底层和所述第二磁性层之间，并且防止所述第一软磁性底层和所述第二软磁性底层之间的磁性相互作用，其中所述第一软磁性底层和所述第二软磁性底层的各向异性场H 第二软磁性底层比第一软磁性底层的各向异性场H k大。

    Perpendicular magnetic recording layer with regions having different magnetic anisotropy constants
    48.
    发明授权
    Perpendicular magnetic recording layer with regions having different magnetic anisotropy constants 有权
    具有不同磁各向异性常数区域的垂直磁记录层

    公开(公告)号：US08361641B2

    公开(公告)日：2013-01-29

    申请号：US12018270

    申请日：2008-01-23

    申请人： Seong-yong Yoon ,  Chee-kheng Lim ,  Hoo-san Lee ,  Hoon-sang Oh ,  Sok-hyun Kong

    发明人： Seong-yong Yoon ,  Chee-kheng Lim ,  Hoo-san Lee ,  Hoon-sang Oh ,  Sok-hyun Kong

    IPC分类号： G11B5/66

    CPC分类号： G11B5/667 ,  G11B5/64 ,  G11B5/65 ,  G11B5/7325 ,  G11B5/84

    摘要： A perpendicular magnetic recording medium and a method of manufacturing the same are provided. The perpendicular magnetic recording medium comprises a recording layer including a plurality of regions formed in the depth direction of the recording layer and a magnetic anisotropy constant of a region relatively deeper than another region, among the plurality of regions, is greater than that of the another region. The method of manufacturing a perpendicular magnetic recording medium includes: forming a recording layer having perpendicular magnetic anisotropy; and irradiating the recording layer with ions.

    摘要翻译： 提供了一种垂直磁记录介质及其制造方法。 垂直磁记录介质包括记录层，该记录层包括在记录层的深度方向上形成的多个区域和多个区域中比另一区域相对更深的区域的磁各向异性常数大于另一区域的磁各向异性常数 地区。 制造垂直磁记录介质的方法包括：形成具有垂直磁各向异性的记录层; 并用离子照射记录层。

    Memory device employing magnetic domain wall movement
    49.
    发明授权
    Memory device employing magnetic domain wall movement 有权
    采用磁畴壁运动的记忆装置

    公开(公告)号：US08115238B2

    公开(公告)日：2012-02-14

    申请号：US11850988

    申请日：2007-09-06

    申请人： Chee-kheng Lim ,  Eun-sik Kim ,  In-jun Hwang

    发明人： Chee-kheng Lim ,  Eun-sik Kim ,  In-jun Hwang

    IPC分类号： H01L27/148

    CPC分类号： G11C11/15 ,  G11C19/0808

    摘要： Provided is a memory device employing magnetic domain wall movement. The memory device includes a writing track and a column structure. The writing track forms magnetic domains that have predetermined magnetization directions. The column structure is formed on the writing track and includes at least one interconnecting layer and at least one storage track.

    摘要翻译： 提供了采用磁畴壁运动的存储器件。 存储器件包括写入轨道和列结构。 写入轨迹形成具有预定磁化方向的磁畴。 列结构形成在写入轨道上，并且包括至少一个互连层和至少一个存储轨道。

    Information storage devices using magnetic domain wall movement and methods of manufacturing the same
    50.
    发明申请
    Information storage devices using magnetic domain wall movement and methods of manufacturing the same 失效
    使用磁畴壁运动的信息存储装置及其制造方法相同

    公开(公告)号：US20120015452A1

    公开(公告)日：2012-01-19

    申请号：US13200358

    申请日：2011-09-23

    申请人： Chee-kheng Lim

    发明人： Chee-kheng Lim

    IPC分类号： H01L21/8246 ,  B82Y99/00

    CPC分类号： G11C11/14 ,  G11C19/0808 ,  Y10S977/933 ,  Y10S977/935

    摘要： In an information storage device, a writing magnetic layer is formed on a substrate and has a magnetic domain wall. A connecting magnetic layer is formed on the writing magnetic layer, and an information storing magnetic layer is formed on an upper portion of side surfaces of the connecting magnetic layer. A reader reads information stored in the information storing magnetic layer.

    摘要翻译： 在信息存储装置中，写入磁性层形成在基板上并具有磁畴壁。 在写入磁性层上形成连接磁性层，在连接磁性层的侧面上部形成信息存储磁性层。 读取器读取存储在信息存储磁性层中的信息。