公开(公告)号：US20090090936A1

公开(公告)日：2009-04-09

申请号：US12120816

申请日：2008-05-15

申请人： Ju-hwan JUNG ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Ju-hwan JUNG ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L29/772 ,  H01L21/336 ,  H01S5/00 ,  G11B9/00

CPC分类号： G11B9/02 ,  H01L29/66462 ,  H01L29/7785 ,  H01L29/7787

摘要： Provided is an electric field head including a resistance sensor to read information recorded on a recording medium. The resistance sensor includes a first semiconductor layer including a source and a drain, and a second semiconductor layer that is heterogeneously combined with the first semiconductor layer. Also, the electric field head further includes a channel between the source and the drain, in a junction region of the first and second semiconductor layers.

摘要翻译： 提供了一种电场头，其包括用于读取记录在记录介质上的信息的电阻传感器。 电阻传感器包括包括源极和漏极的第一半导体层以及与第一半导体层非均匀组合的第二半导体层。 此外，电场头还包括在第一和第二半导体层的结区中的源极和漏极之间的沟道。

公开(公告)号：US20080247085A1

公开(公告)日：2008-10-09

申请号：US11964328

申请日：2007-12-26

申请人： Seung-bum Hong ,  Sung-hoon Choa ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Yong Kwan Kim

发明人： Seung-bum Hong ,  Sung-hoon Choa ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Yong Kwan Kim

IPC分类号： G11B5/127

CPC分类号： G11B9/02

摘要： A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer.

摘要翻译： 提供了一种铁电硬盘装置，包括：铁电介质，具有设置在底部电极上的底部电极和铁电体层; 以及形成在铁电介质上方的头部，头部用于在铁电层上写入和再现信息。

公开(公告)号：US07411210B2

公开(公告)日：2008-08-12

申请号：US11322340

申请日：2006-01-03

申请人： Ju-hwan Jung ,  Hyung-cheol Shin ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Hyung-cheol Shin ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L23/58

CPC分类号： G01Q70/16 ,  G01Q70/14 ,  G01Q80/00 ,  G11B9/1409

摘要： A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.

摘要翻译： 具有电阻尖端的半导体探针和制造半导体探针的方法。 掺杂有第一杂质的电阻尖端包括在其峰上形成的电阻区，并且轻掺杂具有与第一杂质极性相反的第二杂质，以及形成在其倾斜侧上并且重掺杂有第二杂质的第一和第二半导体区 。 半导体探针包括电阻尖端，悬臂具有设置有电阻尖端的端部，设置在悬臂上并覆盖电阻区域的电介质层，以及设置在电介质层上的金属屏蔽层， 位置对应于电阻区域。

公开(公告)号：US20070119240A1

公开(公告)日：2007-05-31

申请号：US11526689

申请日：2006-09-26

申请人： Hong-ski Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Hong-ski Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： G01N27/60 ,  G01N13/10 ,  G12B21/12 ,  G11C7/00

CPC分类号： G11B9/02 ,  G01Q10/06 ,  G01Q70/08 ,  G01Q80/00

摘要： A semiconductor probe and a method of writing and reading information using the same. The semiconductor probe includes a cantilever and a tip formed on an end portion of the cantilever to write or read information on or from a ferroelectric medium on a surface of which an electrode is formed. The tip includes a resistive region lightly doped with semiconductor impurities and a conductive region heavily doped with the semiconductor impurities. The cantilever includes an electrostatic force generation electrode formed on a bottom surface facing the medium. A contact force between the tip and the medium is adjusted by selectively applying a voltage between the electrode formed on the ferroelectric medium and the electrostatic force generation electrode.

摘要翻译： 半导体探针和使用其的信息的写入和读取方法。 半导体探针包括形成在悬臂的端部上的悬臂和尖端，以在其上形成有电极的表面上写入或读取铁电介质上的信息。 尖端包括轻掺杂半导体杂质的电阻区域和重掺杂半导体杂质的导电区域。 悬臂包括形成在面向介质的底面上的静电力产生电极。 通过在形成在铁电介质上的电极和静电力产生电极之间选择性地施加电压来调节尖端和介质之间的接触力。

公开(公告)号：US20110223279A1

公开(公告)日：2011-09-15

申请号：US13113534

申请日：2011-05-23

申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

IPC分类号： B29C59/02

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

公开(公告)号：US07968253B2

公开(公告)日：2011-06-28

申请号：US11745609

申请日：2007-05-08

申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

IPC分类号： G03F1/00

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

公开(公告)号：US20090092033A1

公开(公告)日：2009-04-09

申请号：US12138055

申请日：2008-06-12

申请人： Simon BUEHLMANN ,  Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong

发明人： Simon BUEHLMANN ,  Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong

IPC分类号： G01R27/14 ,  G11B9/02 ,  H01L21/20

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： An electric field sensor includes a substrate having a low resistive semiconductor layer doped with a high-density dopant as the top layer of the substrate, a high resistive semiconductor layer doped with a low-density dopant, the high resistive semiconductor layer located at a partial area on the low resistive semiconductor layer, and a conductive layer located on the high resistive semiconductor layer, wherein a change of an electric field is detected by a change of a current flowing through the low resistive semiconductor layer, the high resistive semiconductor layer, and the conductive layer.

摘要翻译： 电场传感器包括具有掺杂有作为衬底的顶层的高密度掺杂剂的低电阻半导体层的衬底，掺杂有低密度掺杂剂的高电阻半导体层，位于部分 低电阻半导体层上的区域和位于高电阻半导体层上的导电层，其中通过流过低电阻半导体层，高电阻半导体层和电阻半导体层的电流的变化来检测电场的变化， 导电层。

公开(公告)号：US20060157440A1

公开(公告)日：2006-07-20

申请号：US11322340

申请日：2006-01-03

申请人： Ju-hwan Jung ,  Hyung-cheol Shin ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Hyung-cheol Shin ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： C23F1/00 ,  B44C1/22 ,  G01N23/00

CPC分类号： G01Q70/16 ,  G01Q70/14 ,  G01Q80/00 ,  G11B9/1409

摘要： A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.

摘要翻译： 具有电阻尖端的半导体探针和制造半导体探针的方法。 掺杂有第一杂质的电阻尖端包括在其峰上形成的电阻区，并且轻掺杂具有与第一杂质极性相反的第二杂质，以及形成在其倾斜侧上并且重掺杂有第二杂质的第一和第二半导体区 。 半导体探针包括电阻尖端，悬臂具有设置有电阻尖端的端部，设置在悬臂上并覆盖电阻区域的电介质层，以及设置在电介质层上的金属屏蔽层， 位置对应于电阻区域。

公开(公告)号：US07885170B2

公开(公告)日：2011-02-08

申请号：US12142048

申请日：2008-06-19

申请人： Chul-min Park ,  Ju-hwan Jung ,  Hyoung-soo Ko

发明人： Chul-min Park ,  Ju-hwan Jung ,  Hyoung-soo Ko

IPC分类号： G11B7/00

CPC分类号： G11B9/02 ,  G11B5/3173

摘要： A data reading/writing head reading/writing data from/to a ferroelectric recording medium by using an electric field effect, includes a semiconductor body having a first plane on which an air bearing pattern is formed and a second plane crossing the first plane. A sensing unit is located on the second plane and reads data written to the ferroelectric recording medium, wherein the second plane is separated from the first plane, and a floating gate is disposed on the sensing unit, wherein an end of the floating gate extends to the first plane to guide an electric field from the ferroelectric recording medium to the sensing unit.

摘要翻译： 通过使用电场效应从/向铁电记录介质读取/写入数据的数据读/写头包括半导体本体，其具有形成有空气轴承图案的第一平面和与第一平面交叉的第二平面。 感测单元位于第二平面上并读取写入铁电记录介质的数据，其中第二平面与第一平面分离，并且浮动栅极设置在感测单元上，其中浮动栅极的一端延伸到 引导从铁电记录介质到感测单元的电场的第一平面。