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    ORGANIC POLYMERIC MULTI-METALLIC COMPOSITES
    41.
    发明申请
    ORGANIC POLYMERIC MULTI-METALLIC COMPOSITES 审中-公开
    有机聚合物多金属复合材料

    公开(公告)号：US20140128551A1

    公开(公告)日：2014-05-08

    申请号：US13671854

    申请日：2012-11-08

    申请人： Deepak Shukla ,  Dianne M. Meyer ,  Mark R. Mis ,  Matthew Dirmyer

    发明人： Deepak Shukla ,  Dianne M. Meyer ,  Mark R. Mis ,  Matthew Dirmyer

    IPC分类号： C08F226/06 ,  C08F22/10

    CPC分类号： C08F230/04

    摘要： Organic polymeric multi-metallic alkoxide or aryloxide composites are used as dielectric materials in various devices with improved properties such as improved mobility. These composites comprise an organic polymer comprising metal coordination sites, and multi-metallic alkoxide or aryloxide molecules that are coordinated with the organic polymer, the multi-metallic alkoxide or aryloxide molecules being represented by: (M)n(OR)x wherein at least one M is a metal selected from Group 2 of the Periodic Table and at least one other M is a metal selected from any of Groups 3 to 12 and Rows 4 and 5 of the Periodic Table, n is an integer of at least 2, R represents the same or different alkyl or aryl groups, and x is an integer of at least 2.

    摘要翻译： 有机聚合多金属醇盐或芳氧化物复合材料用作具有改进性能的各种装置中的介电材料，例如改进的流动性。 这些复合材料包括包含金属配位点的有机聚合物和与有机聚合物配位的多金属醇盐或芳氧化物分子，多金属醇盐或芳氧化物分子由以下表示：（M）n（OR）x，其中至少 一个M是选自元素周期表第2族的金属，并且至少一个其它M是选自元素周期表第3至12族和第4和5族中的任一个的金属，n是至少2的整数，R 表示相同或不同的烷基或芳基，x为至少2的整数。

    DEVICES CONTAINING ORGANIC POLYMERIC MULTI-METALLIC COMPOSITES
    42.
    发明申请
    DEVICES CONTAINING ORGANIC POLYMERIC MULTI-METALLIC COMPOSITES 有权
    含有机聚合物多金属复合材料的装置

    公开(公告)号：US20140124741A1

    公开(公告)日：2014-05-08

    申请号：US13671893

    申请日：2012-11-08

    申请人： Deepak Shukla ,  Dianne M. Meyer

    发明人： Deepak Shukla ,  Dianne M. Meyer

    IPC分类号： H01L29/786 ,  H01L51/40 ,  H01L21/336 ,  H01L51/10

    CPC分类号： H01L51/009 ,  H01L51/0072 ,  H01L51/0537

    摘要： Organic polymeric multi-metallic alkoxide or aryloxide composites are used as dielectric materials in various devices with improved properties such as improved mobility. These composites comprise an organic polymer comprising metal coordination sites, and multi-metallic alkoxide or aryloxide molecules that are coordinated with the organic polymer, the multi-metallic alkoxide or aryloxide molecules being represented by: (M)n(OR)x wherein at least one M is a metal selected from Group 2 of the Periodic Table and at least one other M is a metal selected from any of Groups 3 to 12 and Rows 4 and 5 of the Periodic Table, n is an integer of at least 2, R represents the same or different alkyl or aryl groups, and x is an integer of at least 2.

    摘要翻译： 有机聚合多金属醇盐或芳氧化物复合材料用作具有改进性能的各种装置中的介电材料，例如改进的流动性。 这些复合材料包括包含金属配位点的有机聚合物和与有机聚合物配位的多金属醇盐或芳氧化物分子，多金属醇盐或芳氧化物分子由以下表示：（M）n（OR）x，其中至少 一个M是选自元素周期表第2族的金属，并且至少一个其它M是选自元素周期表第3至12族和第4和5族中的任一个的金属，n是至少2的整数，R 表示相同或不同的烷基或芳基，x为至少2的整数。

    PHOTOINITIATOR COMPOSITIONS AND USES
    44.
    发明申请
    PHOTOINITIATOR COMPOSITIONS AND USES 审中-公开
    光敏剂组合物和用途

    公开(公告)号：US20120208914A1

    公开(公告)日：2012-08-16

    申请号：US13026355

    申请日：2011-02-14

    申请人： Deepak Shukla

    发明人： Deepak Shukla

    IPC分类号： C08F2/46 ,  C08K5/527

    CPC分类号： C08F2/50 ,  C09D11/101 ,  G03F7/029

    摘要： The photocuring efficiency of a photoinitiator is increased by mixing it with an organic phosphite and an aldehyde. This mixture or photoinitiator composition can be used to cure acrylates or other photocurable compounds, particularly in an oxygen-containing environment.

    摘要翻译： 通过将其与有机亚磷酸酯和醛混合来增加光引发剂的光固化效率。 该混合物或光引发剂组合物可用于固化丙烯酸酯或其它可光固化的化合物，特别是在含氧环境中。

    Organic semiconducting compositions and N-type semiconductor devices
    45.
    发明授权
    Organic semiconducting compositions and N-type semiconductor devices 有权
    有机半导体组合物和N型半导体器件

    公开(公告)号：US08212243B2

    公开(公告)日：2012-07-03

    申请号：US12691793

    申请日：2010-01-22

    申请人： Deepak Shukla ,  Dianne M. Meyer

    发明人： Deepak Shukla ,  Dianne M. Meyer

    IPC分类号： H01L51/30

    CPC分类号： H01L51/0053 ,  C09B57/08 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566 ,  Y02E10/549

    摘要： An organic semiconducting composition consists essentially of an N,N-dicycloalkyl-substituted naphthalene diimide and a polymer additive comprising an insulating or semiconducting polymer having a permittivity at 1000 Hz of at least 1.5 and up to and including 5. This composition can be used to provide a semiconducting layer in a thin-film transistor that can be incorporated into a variety of electronic devices.

    摘要翻译： 有机半导体组合物基本上由N，N-二环烷基取代的萘二酰亚胺和包含绝缘或半导体聚合物的聚合物添加剂组成，其绝缘或半导体聚合物在1000Hz下的介电常数至少为1.5且至多并包括5.该组合物可用于 在可以结合到各种电子器件中的薄膜晶体管中提供半导体层。

    Sensitized photochemical switching for cholesteric liquid crystal displays
    47.
    发明授权
    Sensitized photochemical switching for cholesteric liquid crystal displays 有权
    用于胆甾型液晶显示器的敏化光化学切换

    公开(公告)号：US08025938B2

    公开(公告)日：2011-09-27

    申请号：US12622534

    申请日：2009-11-20

    申请人： Deepak Shukla ,  Krishnan Chari

    发明人： Deepak Shukla ,  Krishnan Chari

    IPC分类号： C09K19/52 ,  C09K19/54 ,  C09K19/58

    CPC分类号： C09K19/586 ,  C09K19/588 ,  Y10T428/10 ,  Y10T428/1036 ,  Y10T428/1055

    摘要： The present invention relates to photo-tunable dopant compositions comprising a photo-reactive chiral compound capable of undergoing a photochemical reaction resulting in the loss of chirality, and a triplet sensitizer. The present invention also relates to a display comprising a substrate, a liquid crystalline layer thereon, wherein the liquid crystalline layer comprises a nematic host, at least one chiral dopant, a photo-reacted compound, and a triplet sensitizer, and at least one transparent conductive layer. The present invention also relates to a method of tuning a cholesteric liquid crystal material comprising providing at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound; combining the at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound to form a mixture; and irradiating the mixture for a period of time.

    摘要翻译： 本发明涉及光可掺杂掺杂剂组合物，其包含能够经历导致手性丧失的光化学反应的光反应性手性化合物和三线态敏化剂。 本发明还涉及一种显示器，其包括基底，其上的液晶层，其中所述液晶层包括向列型主体，至少一种手性掺杂剂，光反应化合物和三线态敏化剂，以及至少一种透明 导电层。 本发明还涉及一种调节胆甾型液晶材料的方法，包括提供至少一种介晶化合物，至少一种三线态敏化剂和至少一种光反应性手性化合物; 组合所述至少一种介晶化合物，至少一种三线态敏化剂和至少一种光反应性手性化合物以形成混合物; 并将混合物照射一段时间。

    Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
    48.
    发明授权
    Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors 有权
    配位控制的N，N'-二环烷基取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的N型半导体材料

    公开(公告)号：US07804087B2

    公开(公告)日：2010-09-28

    申请号：US11567954

    申请日：2006-12-07

    申请人： Deepak Shukla ,  Thomas R. Welter ,  Jeffrey T. Carey ,  Manju Rajeswaran ,  Wendy G. Ahearn

    发明人： Deepak Shukla ,  Thomas R. Welter ,  Jeffrey T. Carey ,  Manju Rajeswaran ,  Wendy G. Ahearn

    IPC分类号： H01L51/30 ,  C07D221/18

    CPC分类号： H01L51/0053 ,  C09B5/62 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N′-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 薄膜晶体管包括一层有机半导体材料，其包含构型受控的N，N'-二环烷基取代的萘-1,4,5,8-双 - 二甲酰亚胺化合物，其具有独立地连接到每个酰亚胺氮上的取代或未取代的脂环基 原子，条件是两个脂环中的至少一个必须是4-取代的环己基环，其中4位上的取代基是4-取代的环己基环以外的唯一取代基，而不是酰亚胺键; 其中这些取代基被立体化学地分别置于酰亚胺氮取代基中基本上为反式或顺式位置之一。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

    N-type semiconductor materials for thin film transistors
    50.
    发明授权
    N-type semiconductor materials for thin film transistors 有权
    用于薄膜晶体管的N型半导体材料

    公开(公告)号：US07629605B2

    公开(公告)日：2009-12-08

    申请号：US11263111

    申请日：2005-10-31

    申请人： Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson ,  Jeffrey T. Carey ,  Wendy G. Ahearn

    发明人： Deepak Shukla ,  Diane C. Freeman ,  Shelby F. Nelson ,  Jeffrey T. Carey ,  Wendy G. Ahearn

    IPC分类号： H01L51/00 ,  C07D471/02

    CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  C09B57/08 ,  H01L51/0008 ,  H01L51/0053 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 一种薄膜晶体管，包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的芳族部分，其中至少一个部分被至少一个给电子基团取代。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。