公开(公告)号：US08446761B2

公开(公告)日：2013-05-21

申请号：US13031001

申请日：2011-02-18

申请人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith

发明人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith

IPC分类号： G11C11/15

CPC分类号： G11C11/5607 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a plurality of nonmagnetic spacer layers, and a plurality of free layers. The free layers are interleaved with the nonmagnetic spacer layers. A first nonmagnetic spacer layer of the nonmagnetic spacer layers is between the free layers and the pinned layer. Each of the free layers is configured to be switchable between stable magnetic states when a write current is passed through the magnetic junction. Each of the free layers has a critical switching current density. The critical switching current density of one of the free layers changes monotonically from the critical switching current density of an adjacent free layer. The adjacent free layer is between the pinned layer and the one of the plurality of free layers.

摘要翻译： 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括钉扎层，多个非磁性间隔层和多个自由层。 自由层与非磁性间隔层交错。 非磁性间隔层的第一非磁性间隔层位于自由层和被钉扎层之间。 每个自由层配置成当写入电流通过磁结时在稳定磁状态之间切换。 每个自由层具有关键的开关电流密度。 一个自由层的关键开关电流密度从相邻自由层的临界开关电流密度单调变化。 相邻的自由层在被钉扎层和多个自由层中的一个之间。

公开(公告)号：US08248100B2

公开(公告)日：2012-08-21

申请号：US13089605

申请日：2011-04-19

申请人： Dmytro Apalkov ,  David Druist

发明人： Dmytro Apalkov ,  David Druist

IPC分类号： G06F7/38 ,  H01L25/00

CPC分类号： H03K19/16 ,  H03K19/1733 ,  Y10T29/49002

摘要： A method and system for providing a logic device are described. The logic device includes a plurality of magnetic input/channel regions, at least one magnetic sensor region, and at least one sensor coupled with the at least one magnetic sensor region. Each of the magnetic input/channel regions is magnetically biased in a first direction. The magnetic sensor region(s) are magnetically biased in a second direction different from the first direction such that at least one domain wall resides in the magnetic input/channel regions if the logic device is in a quiescent state. The sensor(s) output a signal based on a magnetic state of the magnetic sensor region(s). The input/channel regions and the magnetic sensor region(s) are configured such that the domain wall(s) may move into the magnetic sensor region(s) in response to a logic signal being provided to at least a portion of the magnetic input regions.

摘要翻译： 描述了用于提供逻辑设备的方法和系统。 逻辑器件包括多个磁性输入/沟道区域，至少一个磁性传感器区域以及与该至少一个磁性传感器区域耦合的至少一个传感器。 每个磁性输入/沟道区域在第一方向上被磁偏置。 磁传感器区域在不同于第一方向的第二方向上被磁偏置，使得如果逻辑器件处于静止状态，至少一个畴壁驻留在磁性输入/沟道区域中。 传感器基于磁传感器区域的磁状态输出信号。 输入/通道区域和磁性传感器区域被配置为使得响应于提供给磁性输入的至少一部分的逻辑信号，畴壁可以移动到磁性传感器区域 地区。

公开(公告)号：US20120170357A1

公开(公告)日：2012-07-05

申请号：US13031001

申请日：2011-02-18

申请人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A.G. Driskill-Smith

发明人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A.G. Driskill-Smith

IPC分类号： G11C11/16 ,  G11B5/64

CPC分类号： G11C11/5607 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a plurality of nonmagnetic spacer layers, and a plurality of free layers. The free layers are interleaved with the nonmagnetic spacer layers. A first nonmagnetic spacer layer of the nonmagnetic spacer layers is between the free layers and the pinned layer. Each of the free layers is configured to be switchable between stable magnetic states when a write current is passed through the magnetic junction. Each of the free layers has a critical switching current density. The critical switching current density of one of the free layers changes monotonically from the critical switching current density of an adjacent free layer. The adjacent free layer is between the pinned layer and the one of the plurality of free layers.

摘要翻译： 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括钉扎层，多个非磁性间隔层和多个自由层。 自由层与非磁性间隔层交错。 非磁性间隔层的第一非磁性间隔层位于自由层和被钉扎层之间。 每个自由层配置成当写入电流通过磁结时在稳定磁状态之间切换。 每个自由层具有关键的开关电流密度。 一个自由层的关键开关电流密度从相邻自由层的临界开关电流密度单调变化。 相邻的自由层在被钉扎层和多个自由层中的一个之间。

公开(公告)号：US20120112295A1

公开(公告)日：2012-05-10

申请号：US12940926

申请日：2010-11-05

申请人： Dmytro Apalkov ,  Mohamad Towfik Krounbi

发明人： Dmytro Apalkov ,  Mohamad Towfik Krounbi

IPC分类号： H01L29/82

CPC分类号： G11C11/1675 ,  G11C11/161

摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has an easy cone magnetic anisotropy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层具有容易的锥形磁各向异性。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US20110254585A1

公开(公告)日：2011-10-20

申请号：US13089605

申请日：2011-04-19

申请人： Dmytro Apalkov ,  David Druist

发明人： Dmytro Apalkov ,  David Druist

IPC分类号： H03K19/173 ,  H05K13/00

CPC分类号： H03K19/16 ,  H03K19/1733 ,  Y10T29/49002

摘要： A method and system for providing a logic device are described. The logic device includes a plurality of magnetic input/channel regions, at least one magnetic sensor region, and at least one sensor coupled with the at least one magnetic sensor region. Each of the magnetic input/channel regions is magnetically biased in a first direction. The magnetic sensor region(s) are magnetically biased in a second direction different from the first direction such that at least one domain wall resides in the magnetic input/channel regions if the logic device is in a quiescent state. The sensor(s) output a signal based on a magnetic state of the magnetic sensor region(s). The input/channel regions and the magnetic sensor region(s) are configured such that the domain wall(s) may move into the magnetic sensor region(s) in response to a logic signal being provided to at least a portion of the magnetic input regions.

摘要翻译： 描述了用于提供逻辑设备的方法和系统。 逻辑器件包括多个磁性输入/沟道区域，至少一个磁性传感器区域以及与该至少一个磁性传感器区域耦合的至少一个传感器。 每个磁性输入/沟道区域在第一方向上被磁偏置。 磁传感器区域在不同于第一方向的第二方向上被磁偏置，使得如果逻辑器件处于静止状态，至少一个畴壁驻留在磁性输入/沟道区域中。 传感器基于磁传感器区域的磁状态输出信号。 输入/通道区域和磁性传感器区域被配置为使得响应于提供给磁性输入的至少一部分的逻辑信号，畴壁可以移动到磁性传感器区域 地区。

公开(公告)号：US20110141804A1

公开(公告)日：2011-06-16

申请号：US13033021

申请日：2011-02-23

申请人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A.G. Driskill-Smith ,  Steven M. Watts ,  David Druist

发明人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A.G. Driskill-Smith ,  Steven M. Watts ,  David Druist

IPC分类号： G11C11/15 ,  H01L29/82

CPC分类号： G11C11/5607 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The pinned layers are nonmagnetic layer-free and self-pinned. In some aspects, the magnetic junction is configured to allow the free and second pinned layers to be switched between stable magnetic states when write currents are passed therethrough. The magnetic junction has greater than two stable states. In other aspects, the magnetic junction includes at least third and fourth spacer layers, a second free layer therebetween, and a third pinned layer having a pinned layer magnetic moment, being nonmagnetic layer-free, and being coupled to the second pinned layer. The magnetic junction is configured to allow the free layers to be switched between stable magnetic states when write currents are passed therethrough.

摘要翻译： 描述了一种用于提供可用于磁存储器中的磁结的方法和系统。 磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。 固定层是非磁性层，并且是自固定的。 在一些方面，磁结被配置为允许自由和第二被钉扎层在写入电流通过时在稳定的磁状态之间切换。 磁结有两个以上的稳定状态。 在其它方面，磁结包括至少第三和第四间隔层，在它们之间的第二自由层和具有固定层磁矩的第三被钉扎层是非磁性层，并且耦合到第二被钉扎层。 磁结被配置为允许当写入电流通过时自由层在稳定的磁状态之间切换。

公开(公告)号：US20110102948A1

公开(公告)日：2011-05-05

申请号：US12609764

申请日：2009-10-30

申请人： Dmytro Apalkov ,  Vladimir Nikitin ,  David Druist ,  Steven M. Watts

发明人： Dmytro Apalkov ,  Vladimir Nikitin ,  David Druist ,  Steven M. Watts

IPC分类号： G11B5/33

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01L43/08

摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 描述了一种用于提供可用于磁存储器中的磁结的方法和系统。 磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。 第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。 第一非磁性间隔层位于第一被钉扎层和自由层之间。 自由层位于第一和第二非磁性间隔层之间。 第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。 第二非磁性间隔层位于自由和第二被钉扎层之间。 第一和第二钉扎层磁矩是反铁磁耦合和自固定的。 磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

公开(公告)号：US07518835B2

公开(公告)日：2009-04-14

申请号：US11173087

申请日：2005-07-01

申请人： Yiming Huai ,  Dmytro Apalkov

发明人： Yiming Huai ,  Dmytro Apalkov

IPC分类号： G11B5/39

CPC分类号： G11C11/16

摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a magnetic biasing structure having a first pinned layer, a second pinned layer, a spacer layer, and a free layer. The first pinned layer has a first magnetization pinned in the first direction. The second pinned layer has a second magnetization in a second direction that is substantially perpendicular or along the first direction. The spacer layer is nonferromagnetic, resides between the second pinned layer and the free layer, and is configured such that the free layer is substantially free of exchange coupling with the second pinned layer. The free layer has a shape anisotropy with a longitudinal direction substantially in the second direction. The magnetic biasing structure provides a bias field for the free layer along the hard or easy axis. In one aspect, the second pinned layer resides between the first pinned layer and the free layer.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供具有第一被钉扎层，第二钉扎层，间隔层和自由层的磁偏置结构。 第一被钉扎层具有沿第一方向固定的第一磁化。 第二被钉扎层在基本垂直或沿第一方向的第二方向上具有第二磁化强度。 间隔层是非铁磁性的，位于第二被钉扎层和自由层之间，并且被配置为使得自由层基本上不与第二被钉扎层的交换耦合。 自由层具有基本上在第二方向上的纵向方向的形状各向异性。 磁偏置结构为沿着硬轴或易轴提供自由层的偏置场。 在一个方面，第二被钉扎层位于第一被钉扎层和自由层之间。

公开(公告)号：US20070002504A1

公开(公告)日：2007-01-04

申请号：US11173087

申请日：2005-07-01

申请人： Yiming Huai ,  Dmytro Apalkov

发明人： Yiming Huai ,  Dmytro Apalkov

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11C11/16

摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a magnetic biasing structure having a first pinned layer, a second pinned layer, a spacer layer, and a free layer. The first pinned layer has a first magnetization pinned in a first direction. The second pinned layer has a second magnetization in a second direction that is substantially perpendicular or along the first direction. The spacer layer is nonferromagnetic, resides between the second pinned layer and the free layer, and is configured such that the free layer is substantially free of exchange coupling with the second pinned layer. The free layer has a shape anisotropy with a longitudinal direction substantially in the second direction. The magnetic biasing structure provides a bias field for the free layer along the hard or easy axis. In one aspect, the second pinned layer resides between the first pinned layer and the free layer.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供具有第一被钉扎层，第二钉扎层，间隔层和自由层的磁偏置结构。 第一固定层具有沿第一方向固定的第一磁化。 第二被钉扎层在基本垂直或沿第一方向的第二方向上具有第二磁化强度。 间隔层是非铁磁性的，位于第二被钉扎层和自由层之间，并且被配置为使得自由层基本上不与第二被钉扎层的交换耦合。 自由层具有基本上在第二方向上的纵向方向的形状各向异性。 磁偏置结构为沿着硬轴或易轴提供自由层的偏置场。 在一个方面，第二被钉扎层位于第一被钉扎层和自由层之间。

公开(公告)号：US09490421B2

公开(公告)日：2016-11-08

申请号：US13751304

申请日：2013-01-28

申请人： Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Steven M. Watts

发明人： Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Steven M. Watts

IPC分类号： H01L29/82 ,  H01L21/02 ,  H01L43/08 ,  H01L43/12 ,  H01F10/32 ,  G11C11/16

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/12

摘要： A method and system provide a magnetic junction usable in a magnetic device and which resides on a substrate. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer, the nonmagnetic spacer layer and the reference layer form nonzero angle(s) with the substrate. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 一种方法和系统提供可用于磁性装置并位于基板上的磁结。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 自由层，非磁性间隔层和参考层与衬底形成非零角度。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。