摘要:
A halogen treatment is conducted comprising: a halogenation step wherein a halogenation heat treatment for preparing a halogenated carbonized charcoal is conducted in which the carbonized charcoal is brought into contact with halogen; and a dehalogenation step wherein a dehalogenation treatment is conducted in which a part of or all halogen atoms in the halogenated carbonized charcoal are eliminated. A porous carbonaceous material is obtained at a high yield, and the amounts of nitrogen, oxygen, carbon dioxide, and methane adsorbed by this porous carbonaceous material are large. When this porous carbonaceous material is used as an electrical double layer capacitor carbon, the electrostatic capacity is increased compared to conventional carbonaceous materials. Consequently, a carbonaceous material is obtained which has micopores and/or sub-micropores which are suitable for the adsorption of small molecules such as nitrogen, and for storage of electrochemical energy.
摘要:
A carbonaceous material for an electrical double layer capacitor is produced by performing a halogenation treatment step wherein a halogenated dry-distilled charcoal is obtained by bringing a dry-distilled charcoal into contact with a halogen gas; a molding treatment step of adding a binding agent to the halogenated dry-distilled charcoal to form a molded article; and a dehalogenation treatment step wherein a part or all of the halogen in the molded article is eliminated. The carbonaceous material for an electrical double layer capacitor obtained by this method is impregnated with sulfuric acid to form a carbon electrode for an electrical double layer capacitor. This electrode is used to form an electrical double layer capacitor.
摘要:
A device for printing on a continuous sheet includes a motor for carrying the continuous sheet, a switching unit for switching a minimum unit of control of the motor depending on a paper size of the continuous sheet, and a position-detection unit for detecting a rotational position of the motor. The device further includes a stop-control unit for controlling the motor to stop at a position matching a selected minimum unit of control based on the rotational position of the motor detected by the position-detection unit.
摘要:
A semiconductor memory device having reserve bit lines or word lines for replacing defective bit lines or word lines which can increase a defect relief probability and improve an operational margin. The reserve bit lines or word lines are provided approximately in a central portion of a memory mat. Because of a low probability of defect occurrence in the reserve word lines or bit lines, the probability of defect occurrence can be made low when a defective word line or bit line is replaced with a reserve word line or bit line.
摘要:
A driving circuit for providing a predetermined voltage as a driving signal to a respective word line in a dynamic random access memory in a short time. The driving circuit includes an operation signal supply circuit portion for providing an operation signal, a driving signal output circuit portion which receives the operation signal and provides a driving signal as an output, and a voltage supply circuit portion for providing a predetermined voltage to the driving signal output circuit portion in producing the driving signal. A bipolar switching element is provided in the driving signal output circuit portion to control the voltage supply from the voltage supply circuit portion and responds to the operation signal to provide the voltage from the voltage supply circuit portion as the voltage producing the driving signal in a short time.
摘要:
This invention relates to a semiconductor integrated circuit device which has an insulated-gate type element part comprising a capacitor which is formed through the use of a trench in a semiconductor layer, wherein a low-resistance buried layer is formed in the semiconductor layer prior to forming the trench so that the trench is formed to be surrounded by the low-resistance buried layer and thereby the low-resistance buried layer is used as an electrode of the capacitor.