公开(公告)号：US20230034728A1

公开(公告)日：2023-02-02

申请号：US17389779

申请日：2021-07-30

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Zhong-Xiang He ,  Richard J. Rassel ,  Alvin J. Joseph ,  Ramsey M. Hazbun ,  Jeonghyun Hwang ,  Mark D. Levy

IPC: H01L21/768 ,  H01L23/48 ,  H01L29/778 ,  H01L29/66 ,  H01L21/8234

Abstract: Disclosed is an integrated circuit (IC) structure that includes a through-metal through-substrate interconnect. The interconnect extends essentially vertically through a device level metallic feature on a frontside of a substrate, extends downward from the device level metallic feature into or completely through the substrate (e.g., to contact a backside metallic feature below), and extends upward from the device level metallic feature through interlayer dielectric (ILD) material (e.g., to contact a BEOL metallic feature above). The device level metallic feature can be, for example, a metallic source/drain region of a transistor, such as a high electron mobility transistor (HEMT) or a metal-insulator-semiconductor high electron mobility transistor (MISHEMT), which is formed on the frontside of the substrate. The backside metallic feature can be a grounded metal layer. The BEOL metallic feature can be a metal wire in one of the BEOL metal levels. Also disclosed is an associated method.

公开(公告)号：US11322639B2

公开(公告)日：2022-05-03

申请号：US16844606

申请日：2020-04-09

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mark D. Levy ,  Siva P. Adusumilli ,  John J. Ellis-Monaghan ,  Vibhor Jain ,  Ramsey Hazbun ,  Pernell Dongmo ,  Cameron E. Luce ,  Steven M. Shank ,  Rajendran Krishnasamy

IPC: H01L31/107 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0376

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an avalanche photodiode and methods of manufacture. The structure includes: a substrate material having a trench with sidewalls and a bottom composed of the substrate material; a first semiconductor material lining the sidewalls and the bottom of the trench; a photosensitive semiconductor material provided on the first semiconductor material; and a third semiconductor material provided on the photosensitive semiconductor material.

公开(公告)号：US11316064B2

公开(公告)日：2022-04-26

申请号：US16887375

申请日：2020-05-29

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. Adusumilli ,  John J. Ellis-Monaghan ,  Mark D. Levy ,  Vibhor Jain ,  Andre Sturm

IPC: H01L31/107 ,  H01L31/105 ,  H01L31/036 ,  H01L31/028 ,  H01L31/0312

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one fin including substrate material, the at least one fin including sidewalls and a top surface; a trench on opposing sides of the at least one fin; a first semiconductor material lining the sidewalls and the top surface of the at least one fin, and a bottom surface of the trench; a photosensitive semiconductor material on the first semiconductor material and at least partially filling the trench; and a third semiconductor material on the photosensitive semiconductor material.