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44 条记录 (耗时 0.015 秒)

    Method of fabricating electrode plate for supporting semiconductor device
    41.
    发明授权
    Method of fabricating electrode plate for supporting semiconductor device 失效
    制造用于支撑半导体器件的电极板的方法

    公开(公告)号：US4254548A

    公开(公告)日：1981-03-10

    申请号：US37025

    申请日：1979-05-08

    申请人： Hideo Arakawa ,  Keiichi Kuniya ,  Masabumi Ohashi

    发明人： Hideo Arakawa ,  Keiichi Kuniya ,  Masabumi Ohashi

    IPC分类号： C22C49/00 ,  H01L21/48 ,  H01L21/52 ,  H01L23/492 ,  H01R43/02

    CPC分类号： H01L23/4928 ,  H01L21/4871 ,  H01L2924/0002 ,  Y10T29/49213

    摘要： A bundle of carbon fibers each coated with copper or copper alloy is uniformly wound around a core rod under tension, and subjected to a hot press treatment in a non-oxidizing atmosphere. The core rod is then cut off along the surface of a plate formed by the hot-press to form a supporting electrode plate for a semiconductor device. The electrode plate thus fabricated incorporates therein carbon fibers in a spiral and concentric circular array around the core rod.

    摘要翻译： 各自涂覆有铜或铜合金的一束碳纤维在张力下均匀地缠绕在芯棒上，并在非氧化气氛中进行热压处理。 然后沿着由热压机形成的板的表面切断芯棒，以形成用于半导体器件的支撑电极板。 如此制造的电极板在其中包含围绕芯棒的螺旋和同心圆形阵列中的碳纤维。

    Method of producing a vacuum circuit breaker
    42.
    发明授权
    Method of producing a vacuum circuit breaker 失效
    一种真空断路器的制造方法

    公开(公告)号：US4231814A

    公开(公告)日：1980-11-04

    申请号：US013807

    申请日：1979-02-22

    申请人： Ryuji Watanabe ,  Hideo Arakawa ,  Keiichi Kuniya

    发明人： Ryuji Watanabe ,  Hideo Arakawa ,  Keiichi Kuniya

    IPC分类号： H01H1/02 ,  C21D1/44

    CPC分类号： H01H1/0203 ,  Y10T29/49105

    摘要： A method of producing a vacuum circuit breaker, the breaker contacts of which are made of a cast alloy which contains copper or a copper alloy as its main component and, as the sub-component, a metal having a lower melting point and a higher vapor pressure than the main component and having a solubility limit to the main component at room temperature, e.g. lead, bismuth or an alloy of lead and bismuth, the sub-component being contained in excess of said solubility limit. The cast alloy is heated at a temperature not lower than 800.degree. C. but not so high as to cause a melting of the cast alloy, in a vacuum atmosphere which ranges in a pressure between 10.sup.-4 and 10.sup.-6 Torr, before the alloy is mounted as the breaker contacts in the vacuum circuit breaker. A plastic working may be imparted to the cast alloy before the mounting, by, for example, forging. Further, a second heat treatment may be effected on the cast alloy to which the plastic working has been imparted, under the same condition as the first heating. The heating is effective in promoting the spheroidization of the sub-component, and contributes to the prevention of exudation of sub-component to the surface of the breaker contact.

    摘要翻译： 一种制造真空断路器的方法，其断路器触点由含有铜或铜合金作为其主要成分的铸造合金制成，并且作为副组分，具有较低熔点和较高蒸气的金属 压力高于主要组分，并且在室温下具有对主要组分的溶解度极限，例如 铅，铋或铅和铋的合金，所述子成分含有超过所述溶解度极限。 将铸造合金在不低于800℃的温度下加热，但不高于在10-4和10-6托之间的压力范围内的真空气氛中引起熔融的铸造合金， 合金作为断路器触点安装在真空断路器中。 可以通过例如锻造在安装之前对铸造合金施加塑性加工。 此外，在与第一加热相同的条件下，可以对已经施加塑性加工的铸造合金进行第二热处理。 加热有利于促进副成分的球化，有助于防止副成分向断路器接触面的渗出。

    Semiconductor device
    43.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US4196442A

    公开(公告)日：1980-04-01

    申请号：US911078

    申请日：1978-05-31

    申请人： Keiichi Kuniya ,  Hideo Arakawa ,  Kunihiro Maeda ,  Keiichi Morita

    发明人： Keiichi Kuniya ,  Hideo Arakawa ,  Kunihiro Maeda ,  Keiichi Morita

    IPC分类号： C22C49/00 ,  H01L21/52 ,  H01L21/58 ,  H01L23/051 ,  H01L23/373 ,  H01L23/492 ,  H01L23/48

    CPC分类号： H01L23/4928 ,  H01L23/051 ,  H01L23/3733 ,  H01L2924/0002 ,  H01L2924/01079

    摘要： A semiconductor device comprises a semiconductor substrate and at least one supporting electrode soldered to one surface of the semiconductor substrate. The supporting electrode is constituted by a composite body having fibers embedded in a matrix of an electrically conductive metal. The coefficient of the thermal expansion of the fibers is substantially equal to or smaller than that of the semiconductor substrate. The fiber is arrayed in an annular, circular, spiral or the like pattern at least in the surface portion of the composite body on which the composite body is bonded to the substrate.

    摘要翻译： 半导体器件包括半导体衬底和焊接到半导体衬底的一个表面的至少一个支撑电极。 支撑电极由具有嵌入导电金属的基体中的纤维的复合体构成。 纤维的热膨胀系数基本上等于或小于半导体衬底的热膨胀系数。 纤维至少在复合体的表面部分中以环形，圆形，螺旋状或类似图案排列，复合体在该表面部分上结合到基底上。