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公开(公告)号：US12009166B2
公开(公告)日：2024-06-11
申请号：US17452051
申请日：2021-10-22
发明人： Kevin W. Smith
IPC分类号： H01H35/14 , A61B17/00 , A61B17/068 , A61B17/115 , A61B17/72 , A61B90/00 , H01H9/06 , H01H11/00 , H01H13/14 , H01H13/18
CPC分类号： H01H35/14 , A61B17/00 , A61B17/068 , A61B17/115 , H01H9/06 , H01H11/00 , H01H13/14 , H01H13/18 , A61B2017/00017 , A61B2017/00115 , A61B2017/00398 , A61B17/72 , A61B2090/032 , A61B2090/064 , A61B2090/0811 , H01H2203/00 , H01H2235/01 , H01H2300/014 , Y10T29/49105
摘要： A method of adjusting a switch of a device, wherein the method comprises using a biasing force-adjusting element to adjust a magnitude of a biasing force that is imparted to a switching element of the switch by a biasing element that is disposed about the switching element. The biasing force places the switching element in one of a first position and a second position, wherein the first position corresponds to a first electrical state and the second position corresponds to a second electrical state.
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公开(公告)号：US20190204960A1
公开(公告)日：2019-07-04
申请号：US16295507
申请日：2019-03-07
发明人： CHANG-HONG LIU , KAI-LI JIANG , LIANG LIU , SHOU-SHAN FAN
IPC分类号： G06F3/045
CPC分类号： G06F3/045 , G06F2203/04103 , G06F2203/04107 , Y10T29/49105
摘要： A method for making a touch panel, the method includes the following steps. Two touch panel units are made. The two touch panel units are spaced apart from each other. Making each of the two touch panel units includes the following steps. A carbon nanotube material and a substrate are provided. A carbon nanotube floccule structure is made by flocculating the carbon nanotube material. A conductive layer on the substrate is obtained by applying the carbon nanotube floccule structure on the substrate. Two electrodes on opposite ends of the substrate formed to obtain an electrode plate.
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3.发明申请公开(公告)号：US20180319652A1
公开(公告)日：2018-11-08
申请号：US16031132
申请日：2018-07-10
IPC分类号： B81B3/00 , H01L41/113 , B81C1/00
CPC分类号： B81C1/00365 , B81B3/0021 , B81B3/0072 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.
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4.发明申请公开(公告)号：US20180188886A1
公开(公告)日：2018-07-05
申请号：US15907962
申请日：2018-02-28
申请人： SONY CORPORATION
发明人： KENGO AOKI , SHUICHI TATEMORI , NOBUYUKI SHIGENO
CPC分类号： G06F3/0416 , G06F3/041 , G06F3/044 , G06F2203/04103 , Y10T29/49105
摘要： There is provided an information processing apparatus, including: a display unit including a display area, the display area being configured to display an image; and a touchscreen unit including a facing area and an outer area, the facing area facing the display area, the outer area being outside of the facing area. An area of the touchscreen unit is attached to the display unit, the area including the facing area and the outer area.
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公开(公告)号：US10003333B2
公开(公告)日：2018-06-19
申请号：US14495721
申请日：2014-09-24
CPC分类号： H03K17/9505 , G01R33/0047 , G01R33/0052 , H01H19/06 , H01H36/00 , H05K5/0247 , Y10T29/49105 , Y10T29/49963
摘要： A method of non-rotatably securing a target to a shaft extending along a longitudinal axis within an enclosed proximity switch assembly is described. The target support at least one target magnet and a hub having a body portion extending along the longitudinal axis. The body portion includes an outer surface and a shaft aperture extending along the longitudinal axis, and further includes at least one threaded body aperture extending from the outer surface to the shaft aperture. The shaft is inserted into the shaft aperture, and a set screw is inserted into one of the body apertures. A torque is applied to the set screw to threadably engage the set screw with the one of the body apertures such that a distal end of the set screw contacts an outer surface of the shaft. The set screw is sealed within the body aperture with a high-temperature potting.
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6.发明申请公开(公告)号：US20180138906A9
公开(公告)日：2018-05-17
申请号：US14585201
申请日：2014-12-30
申请人： Sik K. Lui , Anup Bhalla
发明人： Sik K. Lui , Anup Bhalla
IPC分类号： H03K17/687 , H01H49/00
CPC分类号： H01H49/00 , H01L29/0696 , H01L29/0856 , H01L29/086 , H01L29/7803 , H01L29/7813 , H01L2924/0002 , H03K17/04123 , H03K17/08122 , H03K17/122 , H03K17/164 , H03K17/687 , Y10T29/49105 , Y10T307/747 , Y10T307/76 , H01L2924/00
摘要： This invention discloses a power switch that includes a fast-switch semiconductor power device and a slow-switch semiconductor power device controllable to turn on and off a current transmitting therethrough. The slow-switch semiconductor power device further includes a ballasting resistor for increasing a device robustness of the slow switch semiconductor power device. In an exemplary embodiment, the fast-switch semiconductor power device includes a fast switch metal oxide semiconductor field effect transistor (MOSFET) and the slow-switch semiconductor power device includes a slow switch MOSFET wherein the slow switch MOSFET further includes a source ballasting resistor.
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公开(公告)号：US09941063B2
公开(公告)日：2018-04-10
申请号：US14368817
申请日：2012-03-15
CPC分类号： H01H3/42 , H01H11/00 , H01H21/285 , H01H2235/01 , Y10T29/49105
摘要： A limit switch having a housing having a box, an attachment hold made in a side surface of the box, having a cylindrical bearing section, a rotating shaft rotatably inserted through the cylindrical bearing section, a cam unit provided in a leading end portion of the rotating shaft, and an operation lever provided in the other end portion of the rotating shaft. Rotational action of the operation lever is converted into vertical action by the cam unit in the box. A contact of a switch main body accommodated in and fixed to the housing is opened and closed. An outer diameter of the cam unit is smaller than an inner diameter of the attachment hole.
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8.发明申请公开(公告)号：US20180072568A1
公开(公告)日：2018-03-15
申请号：US15807715
申请日：2017-11-09
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.
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9.发明申请公开(公告)号：US20180072567A1
公开(公告)日：2018-03-15
申请号：US15802801
申请日：2017-11-03
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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10.发明申请公开(公告)号：US20180057357A1
公开(公告)日：2018-03-01
申请号：US15790515
申请日：2017-10-23
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.
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