公开(公告)号：US07200034B2

公开(公告)日：2007-04-03

申请号：US11060301

申请日：2005-02-18

申请人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa

发明人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/16 ,  H01L27/222 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12

摘要： A magnetic memory device includes a magnetoresistance effect element, and a first write interconnection which is arranged under the magnetoresistance effect element and has a first interconnection layer and a first yoke layer, the first interconnection layer having a portion projecting toward the magnetoresistance effect element, and the first yoke layer including a first, a second, and third regions. And the device includes a second write interconnection which is arranged above the magnetoresistance effect element and has a second interconnection layer and a second yoke layer, the second interconnection layer having a portion projecting toward the magnetoresistance effect element, and the second yoke layer including a fourth, a fifth, and sixth regions.

摘要翻译： 一种磁存储器件包括磁阻效应元件和布置在磁阻效应元件下方并具有第一互连层和第一磁轭层的第一写入互连，第一互连层具有向磁阻效应元件突出的部分，以及 所述第一轭层包括第一，第二和第三区域。 并且该器件包括布置在磁阻效应元件上方并具有第二互连层和第二磁轭层的第二写入互连，第二互连层具有朝向磁阻效应元件突出的部分，第二磁轭层包括第四配线 ，第五和第六个地区。

公开(公告)号：US20050281079A1

公开(公告)日：2005-12-22

申请号：US11213855

申请日：2005-08-30

申请人： Hiroaki Yoda ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Hiroaki Yoda ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00

CPC分类号： H01L43/12 ,  G11C11/15

摘要： A write wiring for writing information in an MTJ device is covered with a magnetic layer. The magnetic layer has a structure in which the growing direction of columnar grains is 300 or less from the normal-line direction of sidewalls, a structure in which grains are deposited like a layer, or a structure in which grains are amorphously deposited.

摘要翻译： 用于在MTJ设备中写入信息的写入线覆盖有磁性层。 磁性层具有如下结构：柱状晶粒的生长方向与侧壁的法线方向成为300°以下，其中晶粒沉积成层的结构或其中晶粒非晶态沉积的结构。

公开(公告)号：US06972923B2

公开(公告)日：2005-12-06

申请号：US10396514

申请日：2003-03-26

申请人： Junichi Akiyama ,  Akira Kikitsu ,  Tadashi Kai ,  Toshihiko Nagase ,  Tomoyuki Maeda ,  Hisanori Aikawa

发明人： Junichi Akiyama ,  Akira Kikitsu ,  Tadashi Kai ,  Toshihiko Nagase ,  Tomoyuki Maeda ,  Hisanori Aikawa

IPC分类号： G11B5/65 ,  G11B5/00 ,  G11B5/596 ,  G11B5/66 ,  G11B5/667 ,  G11B5/738 ,  G11B5/74 ,  G11B5/82

CPC分类号： G11B5/66 ,  G11B5/59633 ,  G11B5/59683 ,  G11B5/667 ,  G11B5/74 ,  G11B5/82 ,  G11B2005/0029

摘要： A magnetic recording medium has a substrate, and a servo signal recording magnetic layer whose magnetization is oriented in a direction perpendicular to a surface thereof, a non-magnetic layer and a data recording magnetic layer, which are stacked on the substrate in the order mentioned. The servo signal recording magnetic layer has a coercivity higher than that of the data recording magnetic layer. The servo signal recording magnetic layer has servo tracks formed with a track pitch Tps, the servo tracks adjacent to each other in a track width direction being magnetized to opposite directions perpendicular to the film surface.

摘要翻译： 磁记录介质具有基板，磁化沿与其表面垂直的方向取向的伺服信号记录磁性层，非磁性层和数据记录磁性层，按照所述顺序堆叠在基板上 。 伺服信号记录磁性层的矫顽力高于数据记录磁性层的矫顽力。 伺服信号记录磁性层具有形成有磁道间距Tps的伺服磁道，在磁道宽度方向上彼此相邻的伺服磁道被磁化成垂直于膜表面的相反方向。

公开(公告)号：US20050199925A1

公开(公告)日：2005-09-15

申请号：US10847384

申请日：2004-05-18

申请人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

发明人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

IPC分类号： H01L27/105 ,  G11B5/33 ,  G11C11/14 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

公开(公告)号：US06909130B2

公开(公告)日：2005-06-21

申请号：US10704552

申请日：2003-11-12

申请人： Hiroaki Yoda ,  Tomomasa Ueda ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Hiroaki Yoda ,  Tomomasa Ueda ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L29/76 ,  H01L43/08

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228

摘要： A recording layer of an MTJ element is constituted by using a high crystal magnetic anisotropic material. A write wiring used to write data into the MTJ element is covered with a magnetic layer, and the write wiring and the magnetic layer are exchange-coupled with each other. A sum of a magnetic volume of the magnetic layer at a part opposed to the recording layer of the MTJ element and that of the recording layer is set smaller than a magnetic volume of the magnetic layer at any other part.

摘要翻译： MTJ元件的记录层通过使用高结晶磁性各向异性材料构成。 用于将数据写入MTJ元件的写入线被磁性层覆盖，并且写入布线和磁性层彼此交换耦合。 在与MTJ元件和记录层的记录层相对的部分处的磁性层的磁体积的总和设定为小于任何其它部分的磁性层的磁性体积。